Abstract: A method for forming an integrated circuit (280) comprises accessing (282) a library of primitive cells and edge codes in the formation of an integrated circuit layout. At least one edge code of at least one previously placed primitive cell (284) of the integrated circuit layout is used. A primitive cell is selected (286) from the library that is compatible with the at least one previously placed primitive cell and the selected primitive cell is placed into the integrated circuit layout adjacent the at least one previously placed primitive cell. The integrated circuit is manufactured (290) using the integrated circuit layout.

Abstract: A method for aligning parallel path data bit streams that may contain skewed data between bit streams and an integrated circuit are disclosed. The method includes, for each bit stream, sampling P data presented on a positive edge of a clock, sampling N data presented on a negative edge of the clock, and delaying the sampled P and N data by one of zero, one-half, one, or other multiple of one-half clock cycle. Delaying the sampled P and N data by one of zero, one-half, one, or other multiple of one-half clock cycle is selected to remove any skew and aligns the sampled P and N data between bit streams.

Abstract: An accumulated current counter (11) includes a sense resistor (30) configured for being coupled in series between an electronic circuit (13) and a power source (12). The sense resistor is further for use in sensing a voltage (VIN(i)) across the sense resistor as a function of a current (Ibatt) provided via the power source. An incremental counter (16) is coupled to the sense resistor for incrementally counting an amount of current, corresponding to an average value of charge Q, going (i) into or (ii) out of the power source. A register (63) accumulates a representation of the incrementally counted current. In one embodiment, the representation of incrementally counted current corresponds to a remaining power source life in hours and minutes.

Abstract: A semiconductor device is formed as part of an integrated circuit. The semiconductor device, which is formed in an active semiconductor layer, is surrounded by a guardian that provides a diffusion barrier against contaminants and also provides assistance in avoiding dishing above the semiconductor device during chemical mechanical polishing. The dielectric that is above the semiconductor device and inside the guardian is etched to form an opening that receives one of an optical fiber, an electromagnetic signal source, or an electromagnetic signal load. The remaining dielectric is in layers that are of substantially uniform thickness. The guardian is built up in layers that are part of a normal integrated circuit process. These include contact layers, via layers, and interconnect layers.

Abstract: A method of generating a parameterized cell is disclosed herein. The method comprises performing a compiling interpretation on a structure layout. The compiling interpretation includes i) determining and analyzing shape relationships of the structure layout, and ii) mapping shapes and calculating properties of mapped shapes. The method also includes generating code in response to the compiling interpretation, wherein the generated code is representative of one or more parameterized cells of a pcell library of an electronic design automation software program.

Abstract: A processing system that interacts with external devices has a processor, a memory, and a controller. The memory stores templates that provide access protocol information about the external devices. When an external device is to be accessed, the operating system, which is stored in the memory, instructs the processor to perform the access to the external device. The processor puts the information about the external device on the address portion of the system bus where it is received and interpreted by the controller. The controller in turn retrieves the template for the external device as indicated by the information that was received. After retrieving the template, the controller outputs the information, in the manner indicated by the template, on an external interface bus where the external device is also coupled. The external device then responds according to the information that the controller put on the external interface bus.

Abstract: An RF carrier generator comprises a circuit for sequentially counting as a function of a randomized offset and time interval, and a memory coupled to the sequential counting circuit. The memory stores samples of a desired Sigma-Delta modulator sequence bit stream. Responsive to an output of the sequential counting circuit, the memory sequentially outputs a single-bit output bit stream of a series of partial sequences of the desired Sigma-Delta modulator sequence bit stream. A method is also disclosed.

Abstract: A method for improving manufacturability of a design includes performing space or enclosure checks on multiple interacting layers of a layout design and then using the resulting space or enclosure data to move predetermined feature edges in an altered design database to decrease the risk of features widths, feature spaces or feature enclosures being patterned smaller than designed. In some embodiments, the upsized features are larger in the wafer circuit pattern than are drawn in a designed database. The method for improving manufacturability of a design, in some embodiments, is stored on a computer readable storage medium.

Abstract: A method for forming a portion of a semiconductor device structure comprises providing a semiconductor-on-insulator substrate having a semiconductor active layer, an insulation layer, and a semiconductor substrate. A first isolation trench is formed within the semiconductor active layer and a stressor material is deposited on a bottom of the first trench, wherein the stressor material includes a dual-use film. A second isolation trench is formed within the semiconductor active layer, wherein the second isolation trench is absent of the stressor material on a bottom of the second trench. The presence and absence of stressor material in the first and second isolation trenches, respectively, provides differential stress: (i) on one or more of N-type or P-type devices of the semiconductor device structure, (ii) for one or more of width direction or channel direction orientations, and (iii) to customize stress benefits of one or more of a <100> or <110> semiconductor-on-insulator substrate.

Abstract: A method of integrating a non-MOS transistor device and a CMOS electronic device on a semiconductor substrate includes forming openings within an active semiconductor layer in first and second regions of a semiconductor substrate. The first region corresponds to a non-MOS transistor device portion and the second region corresponds to a CMOS electronic device portion. The openings are formed using a dual trench process, forming openings or shallow trenches in the non-MOS transistor device portion to a first depth, and openings in the CMOS electronic device portion to a second depth greater than the first depth.

Abstract: An arrangement (200) and method for scalable ESD protection of a semiconductor structure (140), a protection structure (120) providing a discharge transistor (110) path from an input/output node (130) to ground or another node if a threshold voltage is reached, wherein the discharge transistor is a self-triggered transistor having collector/drain (220) and emitter/source (210) regions, and a base/bulk region (260) having one or more floating regions (240) between the collector/drain (220) and emitter/source (210) regions. The floating region (N or P) modulates the threshold voltage Vtl for ESD protection. Vtl can be adjusted by shifting the floating region location. Splitting of the electric field into two parts reduces the maximum of the electric field. Vt1 can be adjusted volt-by-volt to suit application needs. ESD capability is increased by better current distribution in the silicon. This provides the advantages of reduced die size, faster time-to-market, less redesign cost, and better ESD performance.

Abstract: A patterning method allows for separate transfer of a complementary reticle set. In one embodiment, for example, the method includes etching a phase shift mask (PSM), then etching a cut mask for a cPSM mask. Moreover, a decoupled complementary mask patterning transfer method includes two separate and decoupled mask patterning steps which form combined patterns through the use of partial image transfers into an intermediate hard mask prior to final wafer patterning. The intermediate and final hard mask materials are chosen to prevent image transfer into an underlying substrate or wafer prior to the final etch process.

Abstract: A method of making a semiconductor device includes forming a wafer having a substrate and an interconnect structure over the substrate. The wafer also includes a plurality of die areas and a street located between a first die area of the plurality and a second die area of the plurality. A separation structure that includes metal is located in the interconnect structure. At least a portion of the separation structure is located in a saw kerf of the street. The separation structure is arranged to provide a predefined separation path for separating the first die area during a singulation process.

Abstract: A NICAM encoder (54) comprises a NICAM processor (82) and a front-end section (80,84) coupled to the NICAM processor. The front-end section is configured for operating with a system clock (68) that is integer divisible such that the system clock can be used by both the NICAM processor (82) and the front-end section (80,84).

Abstract: According to one embodiment, an integrated fault detector circuit is used to detect one or more of the open circuit and short circuit of a load connected to an integrated circuit power MOSFET driver by directly detecting the level of current flowing in a floating current source.

Abstract: A method for integrating first and second type devices on a semiconductor substrate includes forming openings within an active semiconductor layer of a dual semiconductor-on-insulator in first and second regions of the semiconductor substrate. First and second non-MOS transistor device implant regions are formed within portions of an intermediate semiconductor layer underlying first and second openings, respectively, in a first device portion, filled with a fill material and planarized. A top surface portion of the active semiconductor layer disposed in-between the first and second openings is exposed, first and second low dose non-MOS transistor device well regions are formed in respective first and second portions of the intermediate semiconductor layer underlying a region in-between the first and second openings.

Abstract: A system (10) is disclosed having a circuit portion (18,26,36) containing more than electrical conductors and a wirebonded assemblage (12,14,16) overlying the circuit portion (18,26,36). The wirebonded assemblage (12,14,16) comprises a plurality of wirebonded wires ((50,52),(60,64),(66,68)), each of the plurality of wirebonded wires being electrically coupled. The wirebonded assemblage (12,14,16) provides electrical shielding for the circuit portion (18,26,36). In one embodiment, the wirebonded assemblage provides for heat spreading.

Abstract: A memory cell includes devices having associated isolation recesses of differing magnitudes. The effective channel width of a corresponding transistor is substantially equal to a channel top surface width plus twice a sidewall width formed by the isolation recesses. In an SRAM cell, a latch transistor has a larger effective channel width than an associated pass transistor by forming larger recesses, and therefore larger sidewalls in isolation layers surrounding the latch transistor and limiting such recesses for pass transistors. During manufacture of the memory cell, a mask is used to mask an area of the pass transistor while exposing an area of the latch transistor. Accordingly, recesses in an isolation layer around the latch transistor are formed without affecting a corresponding area around the pass transistor.

Abstract: A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.

Abstract: A method of making a high quality thin dielectric layer includes annealing a substrate and a base oxide layer overlying a top surface of the substrate at a first temperature in a first ambient and annealing the substrate and base oxide layer at a second temperature in a second ambient subsequent to the first anneal. The first ambient includes an inert gas ambient selected from the group consisting of a nitrogen, argon, and helium ambient. Prior to the first anneal, the base oxide layer has an initial thickness and an initial density. The first anneal causes a first density and thickness change in the base oxide layer from the initial thickness and density to a first thickness and density, with no incorporation of nitrogen, argon, or helium of the ambient within the base oxide layer. The first thickness is less than the initial thickness and the first density is greater than the initial density.