Abstract: Thermo-optic devices including a bottom cladding layer, a patterned core material and a top cladding layer, each having a different refractive index, can be made by depositing a heater material, such as tungsten or chromium, on the outside of the bottom and/or top cladding layer. Depending on the refractive index differences between the cladding layers and the core layers, the amount of heater material can also be varied. The heater material can surround the cladding layers, can be present on the sidewalls and top only, or the sidewalls alone, to provide sufficient heat to change the refractive index of the layers and thus the path of light passing-through the device. These devices when built into the substrate can be connected to underlying devices for vertical integration, or connected to other devices and components formed on the same substrate for increased integration.

Abstract: Method of etching a ferroelectric layer includes etching an upper electrode and partially through a ferroelectric layer. A dielectric material is subsequently deposited upon the upper electrode and the partially etched ferroelectric layer. A second etch step completely etches through the remaining portion of the ferroelectric layer and also etches lower electrodes. A random access memory apparatus is constructed that includes a first conductive layer, a dielectric layer disposed upon the first conductive layer, a second conductive layer disposed upon the dielectric layer, where such layers form a stack having a sidewall. Further, the sidewall has a protective dielectric film disposed thereon and extending from the second layer down to the dielectric layer.

Abstract: A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.

Abstract: A method and apparatus performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.

Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.

Abstract: A method and apparatus for transferring a substrate is provided. In one embodiment, an apparatus for transferring a substrate includes at least one end effector. A disk is rotatably coupled to the end effector. The disk is adapted to rotate the substrate relative to the end effector. The end effector may additionally include a sensor coupled thereto. The sensor is adapted to detect an indicia of orientation of the substrate supported by the end effector. In another embodiment, a method for transferring a substrate includes rotating the substrate disposed on an end effector and detecting an indicia of orientation of the substrate.