Abstract: Methods of reducing interference in a satellite communications system may include receiving a plurality of feeder link signals and time aligning the plurality of feeder link signals to provide time aligned feeder link signals. At least two of the time aligned feeder link signals may be combined to provide reduced interference of at least one of the feeder link signals. Related systems are also discussed.

Abstract: Data from a first data set utilized in generating a first tree map visualization is displayed by filtering the first data set so as to provide a second data set having a reduced amount of data relative to the first data set. A second tree map visualization is generated based on the second data set.

Abstract: A communications cable comprises an elongate cable jacket having an internal cavity and a plurality of twisted pairs of insulated conductors disposed in the internal cavity of the cable jacket, each of the conductors being insulated with a polymeric layer. Each of the insulated conductors within each of the twisted pairs of conductors defines a twinning helix having a first rotative direction, and each of the twisted pairs defines a bunching helix having a second rotative direction, the second rotative direction being opposite that of the first rotative direction. In this configuration, the communications cable can provide acceptable crosstalk and attenuation performance, even with foamed insulators that have demonstrated unacceptable performance when twinned and bunched in the same rotative direction.

Abstract: Pharmaceutical compositions aryl substituted amine compounds, and in particular, 3-aminophenyl amine compounds are provided. Representative compounds are (E)-4-(3-aminophenyl)-3-buten-1-amine, (E)-N-methyl-4-(3-aminophenyl)-3-buten-1-amine and (E)-N-methyl-5-(3-aminophenyl)-4-penten-2-amine.

Abstract: Methods of treating or preventing fibrosis and sclerosis by the administration of compositions containing A.sub.1 adenosine receptor antagonists and/or P.sub.2X purinoceptor antagonists, or combinations thereof.

Abstract: Methods of forming semiconductor switching devices having trench-gate electrodes include the steps of implanting base region dopants of second conductivity type into a semiconductor substrate to define a preliminary base region therein. A step is then performed to form a trench having sidewalls which extend through the preliminary base region. A sacrificial insulating layer is then formed on the sidewalls of the trench while the implanted base region dopants are simultaneously diffused into the region of first conductivity type. The sacrificial insulating layer is then removed. Next, a gate electrode insulating layer is formed on the sidewalls and on a bottom of the trench. A gate electrode is then formed on the gate electrode insulating layer. Dopants of first conductivity type are then implanted into the semiconductor substrate to define a preliminary source region, which forms a P-N junction with the implanted base region dopants, and into the gate electrode to improve the conductivity thereof.