Abstract: Methods of fabricating semiconductor integrated circuit devices are provided. A substrate is provided with gate patterns formed on first and second regions. Spaces between gate patterns on the first region are narrower than spaces between gate patterns on the second region. Source/drain trenches are formed in the substrate on opposite sides of the gate patterns on the first and second regions. A first silicon-germanium (SiGe) epitaxial layer is formed that partially fills the source/drain trenches using a first silicon source gas. A second SiGe epitaxial layer is formed directly on the first SiGe epitaxial layer to further fill the source/drain trenches using a second silicon source gas that is different from the first silicon source gas.

Abstract: Embodiments of the present invention include methods, terminals and circuits for updating provisioning data of a mobile terminal. A network initiated subsequent provisioning message requesting that the mobile terminal initiate a session to update the provisioning data of the mobile terminal is received and it is determined if the mobile terminal is executing a foreground data application utilizing a current registered Internet Protocol (IP) session. An IP session is selectively initiated to update the provisioning data of the mobile terminal based on the determination of whether the mobile terminal is executing a foreground data application utilizing a current registered IP session.

Abstract: Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.