Abstract: The invention relates to a handler for electronic components, in particular IC's, having a plurality of circulating carriages (10) that are guided along their circulating track by means of a stationary, annular guide device (9) consisting of at least one circulating guide rail. Retaining units (12) are provided on the circulating carriages (10), said units retaining the components (43) to be tested.

Abstract: A process of manufacturing an electron microscopic sample comprising the steps of: (a) forming a mask layer for covering an object region to be analyzed of a semiconductor layer and/or a conductive layer which have/has been patterned into a desired configuration; (b) reducing a periphery region surrounded the object region to be analyzed in a depth direction by using the mask layer; (c) removing the mask layer and forming an etch stop layer over the object region to be analyzed and the periphery region; and (d) polishing the semiconductor layer and/or the conductive layer in the object region to be analyzed down to the level of the surface of etch stop layer lying on the reduced periphery region.

Abstract: A method of adjusting an output of a gas sensor element is provided. The gas sensor element includes a lamination of a solid electrolyte body, a target gas-exposed electrode, a reference gas-exposed electrode, and a diffused resistance layer in which a target gas to be measured diffuses. The target gas-exposed electrode is disposed on a first surface of the solid electrolyte body exposed to the target gas. The reference gas-exposed electrode is disposed on a second surface of the solid electrolyte body exposed to a reference gas. The diffused resistance layer is disposed on the first surface of the solid electrolyte body. The target gas-exposed electrode and the reference gas-exposed electrode produce a sensor output. The adjustment of the sensor output is achieved by decreasing a diffusion length of the target gas in the diffused resistance layer as a function of a quantity of the sensor output to be adjusted by, for example, removing a portion of the diffused resistance layer.

Abstract: A procedure and tools for quantifying surface cleanliness are described. Cleanliness of a target surface is quantified by wiping a prescribed area of the surface with a flexible, bright white cloth swatch, preferably mounted on a special tool. The cloth picks up a substantial amount of any particulate surface contamination. The amount of contamination is determined by measuring the reflectivity loss of the cloth before and after wiping on the contaminated system and comparing that loss to a previous calibration with similar contamination. In the alternative, a visual comparison of the contaminated cloth to a contamination key provides an indication of the surface cleanliness.

Abstract: A pump housing and manufacturing method therefor includes a primary molding for injecting halves of the pump housing and a secondary molding for assembling the primary molds to each other to be installed to the interior of a secondary metal mold and secondarily-molding the outer surface of the pump housing without requiring core fabrication, installation and removal steps of the injection molding. Thus, the core fabrication and core removal steps heretofore required for an inlet or undercut are unnecessary for enabling swift mass production and lowering difficulty of working to make the quality consistent and decrease inferior products, thereby reducing the manufacturing cost.

Abstract: A semiconductor device having an electrostatic discharge protection device and at least one accompanying device selected from the group comprising of a N or P channel MOS transistor, CMOS, bipolar transistor and BiCMOS, in which the electrostatic discharge protection device comprises a vertical type bipolar transistor including; a semiconductor substrate; an epitaxial layer laminated on the semiconductor substrate; a buried collector of a first conductivity type which is formed of the semiconductor substrate or which is formed from the surface of the semiconductor substrate to the epitaxial layer; a base of a second conductivity type which is a lightly doped well and formed on the epitaxial layer; and an emitter of the first conductivity type and formed on the surface layer of the base of the second conductivity type; and in which the base is adapted to have impurity concentration and depth so that a punch-through is generated between the emitter and the collector of the electrostatic discharge protection dev

Abstract: A novel established cell line, KML.sub.1-7, obtained by collecting lymphoid cells from an animal with autoimmune disease, culturing them in a culture medium containing the supernatant of a culture in which lymphoid cells of animal origin have been grown in the presence of a mitogen, and continuing the culture for a period of 8 months until the cells are able to grow in the absence of the aforesaid supernatant. This established cell line has the following properties.(1) It produces a factor, B-Cell Differentiation Factor (BCDF), participating in the differentiation of antibody-producing cells.(2) It does not produce B cell growth factor.(3) It consists of immortalized null cells.