Patents Represented by Attorney Omund R. Dahle
  • Patent number: 4271104
    Abstract: A method of hot rolling or extrusion of a textured-surface sheet can be used to produce a large one dimensional array of fibers; these arrays can be stacked to form the two dimensional matrix required for image transfer. Alternatively, a flat ribbon can be rolled or extruded and the fiber array formed from it by altering the refractive index of alternate strips using diffusion ion exchange or implantation methods.
    Type: Grant
    Filed: December 13, 1979
    Date of Patent: June 2, 1981
    Assignee: Honeywell Inc.
    Inventors: Rogers H. Anderson, Enrique Bernal G., Di Chen
  • Patent number: 4256792
    Abstract: An aluminum oxide-aluminum nitride composite electronic substrate with anisotropic thermal properties is described. The aluminum nitride is in the form of needles incorporated into the aluminum oxide, the needles being oriented or aligned through the thickness of the substrate parallel to the short transverse direction of the substrate. The substrate has improved thermal conductivity in the short transverse direction and yet maintains good dielectric strength across the surface of the substrate. The improved thermal conductivity is required for heat dissipation from the micropackage assembly.
    Type: Grant
    Filed: January 25, 1980
    Date of Patent: March 17, 1981
    Assignee: Honeywell Inc.
    Inventors: Barry G. Koepke, Kelly D. McHenry
  • Patent number: 4253731
    Abstract: An infrared fiber of a silver chloride clad silver bromide core fabricated by an extrusion process in which both core and cladding are extruded.
    Type: Grant
    Filed: April 9, 1979
    Date of Patent: March 3, 1981
    Assignee: Honeywell Inc.
    Inventors: Rogers H. Anderson, Enrique B. G., Di Chen
  • Patent number: 4252400
    Abstract: A nondestructive dynamic controller for thermoplastic development is disclosed. The dynamic controller monitors the development of a hologram, without altering the charge pattern on the recording medium that is required for the development. The dynamic controller determines when optimum deformation has occurred in the developing recording medium and provides a signal which is used to shut off the thermal input used in the development.
    Type: Grant
    Filed: August 9, 1978
    Date of Patent: February 24, 1981
    Assignee: Honeywell Inc.
    Inventors: Enrique Bernal G., Tzuo-Chang Lee
  • Patent number: 4252861
    Abstract: The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a higher temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The higher temperature of the substrate causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is away from the substrate. This provides several advantages including increased growth speed, a nonhomogeneous doping of the silicon layer, that is an impurity concentration gradient and results in a high-low junction at the back surface and gives the back surface field effect.
    Type: Grant
    Filed: September 28, 1979
    Date of Patent: February 24, 1981
    Assignee: Honeywell Inc.
    Inventors: J. Don Heaps, J. David Zook
  • Patent number: 4251570
    Abstract: The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a lower temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The lower temperature of the substrate, say 5.degree.-10.degree. C. below the freezing temperature of silicon, causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is on the substrate. This provides an advantage of increased growth speed.
    Type: Grant
    Filed: November 19, 1979
    Date of Patent: February 17, 1981
    Assignee: Honeywell Inc.
    Inventor: J. David Zook
  • Patent number: 4244650
    Abstract: In this disclosure is described apparatus for automatic pattern or object recognition in which objects or goods with optically recognizable patterns are optically scanned for the pattern by passing the objects in front of optical sensor means where the light reflected from the object is received by the sensor means. In this disclosure there is described in detail apparatus for identifying and sorting various types of returnable bottles such as soft drink bottles by scanning across the bottles, the light reflected from the bottle graphics providing a coded signal or signature representing the bottle type. The identification is accomplished by considering such signature features as number of peaks, largest gap, area under curve, summation of difference between consecutive data points and the ratio of the area to the difference summation. The values obtained for the features are then matched with known feature bounds to provide the identification.
    Type: Grant
    Filed: April 20, 1978
    Date of Patent: January 13, 1981
    Assignee: Honeywell Inc.
    Inventors: James H. Garfunkel, Kenneth P. Koeneman
  • Patent number: 4236824
    Abstract: The optical surface figures of both optical surfaces of a forged halide optical element can be corrected and optimized using an interferometer to observe the lens surface while applying pressure via gas to produce permanent deformation of the lens.
    Type: Grant
    Filed: June 21, 1979
    Date of Patent: December 2, 1980
    Assignee: Honeywell Inc.
    Inventor: Rogers H. Anderson
  • Patent number: 4230950
    Abstract: An electro-optic smoke detector is described which has an improved smoke chamber and detector construction to enhance the detector sensitivity in general and its response to small smoke particles in particular.
    Type: Grant
    Filed: May 16, 1979
    Date of Patent: October 28, 1980
    Assignee: Honeywell Inc.
    Inventors: John A. Forss, Tzuo-Chang Lee
  • Patent number: 4225791
    Abstract: An improved circuit for an optical smoke detector utilizing an active band pass filter which has a bias feedback to the phototransistor detecting element to bias the phototransistor to a static conductivity state of high gain or high sensitivity without regard to whether the phototransistor is in a high ambient light level or a low (dark) ambient light level.
    Type: Grant
    Filed: March 1, 1979
    Date of Patent: September 30, 1980
    Assignee: Honeywell Inc.
    Inventor: Arlon D. Kompelien
  • Patent number: 4221485
    Abstract: An optical smoke detector having a smoke sensing chamber comprising a point source of light mounted on the middle of a photodetector, the source of light transmitting in a forward direction and away from the photodetector and further having the point source of light located at the center of curvature of a spherical reflector. During normal standby periods when there are no smoke particles in the chamber to scatter the light, the light is transmitted to the spherical reflector and reflected back to the source without falling on the photodetector. In the presence of smoke the light is scattered and falls on the photodetector to indicate the presence of the smoke.
    Type: Grant
    Filed: June 4, 1979
    Date of Patent: September 9, 1980
    Assignee: Honeywell Inc.
    Inventor: Richard G. Schulze
  • Patent number: 4217318
    Abstract: Fine-grained halide bodies are formed which have comparable optical properties to a single crystal halide body. The halide bodies are formed by press forging while an essentially constant fluid pressure is applied to the halide body.
    Type: Grant
    Filed: April 25, 1977
    Date of Patent: August 12, 1980
    Assignee: Honeywell Inc.
    Inventor: Rogers H. Anderson
  • Patent number: 4201446
    Abstract: This invention provides apparatus for remote temperature sensing by means of fiber optics in which the sensor is optical and passive, with no electrical power required at the sensor. The temperature-sensing section of the fiber optic makes use of a transparent liquid as core or cladding and in which the transparent liquid has a temperature-dependent index of refraction.
    Type: Grant
    Filed: October 20, 1978
    Date of Patent: May 6, 1980
    Assignee: Honeywell Inc.
    Inventors: John J. Geddes, G. Benjamin Hocker
  • Patent number: 4191470
    Abstract: This invention is directed to a laser-fiber optic interferometric strain gauge. This is a strain gauge that can be read out by means of fiber optics, which has no power other than optical at the strain gauge. Laser light is directed into two single mode fibers, which fibers are attached to a supporting member the strain of which is to be measured. The ends of the fibers are brought into close proximity and the light coming out of the two fibers interferes. When the supporting member is strained the fringes move giving a measure of the strain.
    Type: Grant
    Filed: September 18, 1978
    Date of Patent: March 4, 1980
    Assignee: Honeywell Inc.
    Inventor: Charles D. Butter
  • Patent number: 4176208
    Abstract: The present invention directed to antireflective coatings presents a new method for producing graded index films from alternating very thin layers of two materials with proper but differing indices. During deposition the thickness of each of the many layer pairs deposited can remain fairly uniform while the layer thickness of the two materials making up each pair is adjusted so that the resulting average index matches the index of the desired profile for that part of the total thickness. A two source evaporation deposition system is used and the two materials may be, for example, thallium iodide and lead fluoride.
    Type: Grant
    Filed: November 24, 1978
    Date of Patent: November 27, 1979
    Assignee: Honeywell Inc.
    Inventors: Thomas J. Moravec, Richard A. Skogman
  • Patent number: 4176207
    Abstract: A method of providing non-birefringent cubic thallium iodide thin films on potassium chloride optical elements. The method of this invention is to deposit thin film alternating layers of thallium iodide and a buffer material such that a composite coating is obtained. The optic buffer material may be lead fluoride. The thallium iodide film made by the method of this invention is highly transparent, insoluble and non-scattering.
    Type: Grant
    Filed: October 19, 1978
    Date of Patent: November 27, 1979
    Assignee: Honeywell Inc.
    Inventors: Thomas J. Moravec, Richard A. Skogman
  • Patent number: 4141621
    Abstract: In thin film optical systems including thin film optical waveguides, of such materials as Nb.sub.2 O.sub.5, it is desirable to fabricate thin film lenses. One of the types of lenses which can be made is the step-in-thickness type. This type of thin-film lens can be fabricated by plasma etching through a photoresist mask in such materials as Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5. Plasma etching yields an etch wall with smooth steep sides which is important for good quality thin-film lenses; however, the etch rate is too variable for reproducible etch depth based upon etch time, and the bottom of the etch is very rough, causing excessive scattering loss. It has been found that a sandwich-like structure of Nb.sub.2 O.sub.5, TiO.sub.2 and Nb.sub.2 O.sub.5 provides an improved arrangement in that a good control of the etch depth and a smooth flat bottom in the etch areas have been achieved by introducing the layer of TiO.sub.2 as an etch stop.
    Type: Grant
    Filed: August 5, 1977
    Date of Patent: February 27, 1979
    Assignee: Honeywell Inc.
    Inventors: Roger L. Aagard, Robert P. Ulmer
  • Patent number: 4137355
    Abstract: It is desirable to coat large area, thin sheets of large-grain polycrystalline silicon on an inexpensive ceramic substrate for use in solar cell applications and the like. Such ceramic substrate as are used are chosen from those having thermal expansion coefficients similar to those of silicon. The ceramics meeting these requirements, for example mulite, alumina and zirconia, when brought into contact with molten silicon, however, are not wet by the silicon and no coating takes place. In this invention the structure includes an interface layer comprising carbon on the surface of such a substrate to render the surface wettable by molten silicon. With this interface layer the ceramic of the type which is not wet by molten silicon can be successfully coated with silicon.
    Type: Grant
    Filed: December 19, 1977
    Date of Patent: January 30, 1979
    Assignee: Honeywell Inc.
    Inventors: Joseph D. Heaps, Obert N. Tufte
  • Patent number: 4136318
    Abstract: Disclosed are cascaded spin-flip Raman lasers involving alloy semiconductors such as mercury cadmium telluride with different energy gaps or with an energy gap gradient to provide for a relatively large change in frequency for a small change in field and enabling operation at low magnetic field levels where the output power and conversion efficiency are high.
    Type: Grant
    Filed: May 9, 1977
    Date of Patent: January 23, 1979
    Assignee: Honeywell Inc.
    Inventor: Paul W. Kruse, Jr.
  • Patent number: RE30166
    Abstract: A holographic optical memory utilizes an optical heterodyne technique to significantly increase the signal-to-noise ratio during the readout stage of operation. A light source provides a coherent light beam which is split into a readout beam and a local oscillator beam. The readout beam is directed to one of the holograms stored in the memory medium and a portion of the readout beam is diffracted by the hologram to form a reconstructed image of the bit pattern stored in the hologram at the reconstructed image plane. The local oscillator beam is superimposed with the diffracted portion of the readout beam. An optical frequency translator is positioned in either the readout beam or the local oscillator beam to cause the beams to have different optical frequencies. Therefore, when the two beams are superimposed, a beat frequency signal is produced. An array of detectors is positioned at the reconstructed image plane to receive the superimposed beams.
    Type: Grant
    Filed: October 9, 1974
    Date of Patent: December 11, 1979
    Assignee: Honeywell Inc.
    Inventor: Tzuo-Chang Lee