Abstract: To determine the occurrence of an address for a defective memory, cell in a ROM, an error-correction control system includes a comparator that compares a set of incoming memory address signals with static signals provided by a laser-fuse array. The static signals represent addresses of defective memory cells in the ROM. An ADDHIT signal indicates that the ROM has received an address of a defective memory cell. The ADDHIT signal is then timed to provide a REV signal that changes the polarity of the memory bit signal out of a buffer circuit. This corrects an erroneous memory cell by reversing the sense of the memory bit received from a defective memory cell and delivered to an output terminal of the ROM. The REV signal is steered to an output buffer corresponding to the proper ROM chip output pad using a fuse-controlled selection circuit.

Abstract: A self-refreshing SRAM with internal DRAM memory cells is provided with a test mode enable circuit for testing the real refresh time of the internal SRAM memory cells and for determining the maximum refresh capability of the internal DRAM memory cells. The self-refreshing DRAM includes a test-mode enable circuit, an arbitration circuit, and a memory control logic circuit. In a normal mode of operation, the test mode enable circuit is not active. In a test mode of operation, the test mode enable circuit is active which enables the memory control logic to be controlled by an external command signal that is provided through an external pin, such as a chip-enable /CE pin when the chip is in the test mode.

Abstract: A SRAM uses a number of memory banks in a configuration that uses lower voltage swings on a differential internal data bus so that the internal data bus no longer uses single-ended VDD/VSS, HIGH-to-LOW, rail-to-rail voltage swing for a read mode of operation. This consumes less power for a read operation. Senseamps for finally converting low-level signals to full logic output voltage levels are located right next to output buffers and data output pads for the SRAM. The bit lines for a memory CORE are formed in lower metal layers that are closer to the core memory cells and, thus, have higher capacitance. The present invention uses lower-capacitance top layers 4–6 of a 6 metal layer scheme for the signal lines of the differential internal data bus. An optimum configuration has the capacitance of a bitline equal to the capacitance of the differential internal data bus bit-line.

Abstract: A smart memory includes a memory array and one or more memory-intensive additional functions, all packaged in a standard memory package that has substantially the same fit and form as a standard integrated-circuit memory. One type of smart memory chip is a multi-media RAM (MMRAM) chip that provides on a single integrated-circuit chip a memory array and a compressor/decompressor (CODEC) section where connections between the memory array section and the CODEC section are on the single integrated-circuit die. The smart memory eliminates the need for additional special function integrated-circuit packages and significantly reduces the clock rate and the power consumption of a baseband chip in a personal communication device.

Abstract: A combined AC/DC monitoring system simultaneously monitors an AC power supply and a DC power supply in a mobile unit. The monitoring system is electrically isolated from an AC input source through an AC isolation transformer. A microcontroller digitally provides various computed variables from various digitized input signals. The monitoring system simultaneously displays a plurality of the computed variables while the system monitors for various user-selected high/low conditions of the computed variables. The system monitors AC power surges and can alternately displays a high voltage level for a predetermined time and a low voltage level for a predetermined time. An algorithm determines whether the AC voltage is a true sine wave or otherwise. The system monitors DC current on the high side, or positive terminal, of a battery. User selectable DC shunts are provided to measure a range of DC currents.

Abstract: An enhanced arbitration and control subsystem for a self-refreshing DRAM has a normal mode of operation and a test mode of operation in which an internal refresh cycle is automatically performed prior to each external access cycle. A first gate is opened in a normal mode of operation to enable internal refresh cycles upon receipt of an internal refresh request signal. The first gate is closed in a test mode to disable any internal refresh requests. A second gate is opened in the test mode of operation to provide a path for an external access request signal to first trigger initiation of an internal refresh cycle prior to an external access cycle. The second gate is closed in a normal mode of operation to allow normal arbitration between internal refresh request signals and external RAS request signals.

Abstract: A counter is incremented whenever an internal refresh is requested and a prior internal refresh request has not yet been completed. A refresh-request storage element such as a latch circuit, provides an output signal that is set upon receipt of an internal refresh request control signal to initiate an internal refresh cycle. A refresh-request storage element is reset upon initiation of an internal refresh cycle. A refresh miss detector provides an output pulse when the refresh request signal is received concurrent with the refresh request storage element being set. Provision is made to read out the count, and to reset the count. By reading out the count an indication is obtained of how many refresh requests were missed, and by using arbitrary input patterns the robustness of the self-refreshing DRAM is improved.

Abstract: Internally refreshing one or more DRAM arrays without requiring additional external command signals. Scheduling of either refresh cycles and/or read/write access cycles uses an arbitration and selection circuit that receives a refresh request input signal from an independent oscillator and a row access select RAS input signal. A wordline address multiplexer provides either internally-provided refresh or externally-provided row-line address signals to a wordline decoder. A refresh row counter uses a token status signal for activating only one refresh row counter at a time. Instantaneous refresh power is controlled by controlling the number of cells in each DRAM block. An arbitration and control system includes an address transition block with a delay for resolving metastability, a refresh control block, a RAS control block, and an arbitration circuit that temporarily stores unselected requests.

Abstract: A power-up control circuit has three components including a normal power-supply voltage level detection section, a special command section for detecting a deep-sleep enable input signal, and an output driver section that logically combines the output signal of the normal power-supply voltage level detection section and the special command detecting section to provide an improved, combined power-up control signal CPWRUP. The combined power-up control signal CPWRUP signal is temporarily brought to a LOW state for a predetermined period of time immediately after the end of a power-saving mode of operation, such as a deep-sleep mode of operation for a memory device. The LOW state of the combined power-up control signal CPWRUP output signal allows all internal circuitry to be returned to their initial states that are the same as those obtained after a normal power-up sequence, even though the external voltage level stays at its normal level.

Abstract: An improved voltage boosting circuit operates entirely from a single, common VCC voltage supply. An NMOS pass transistor has a gate input terminal to which is connected a gate boost capacitor and a PMOS precharge circuit. A drain terminal of the NMOS pass transistor is connected to a drain boost capacitor and to a drain precharge circuit. The gate boost capacitor is precharged from the common VCC voltage. The second terminal of the precharged gate boost capacitor is connected to the common VCC voltage level to thereby boost the precharged gate input terminal voltage to 2 VCC. The drain of the NMOS pass transistor has a similar boost capacitor and precharge configuration. Another embodiment further includes an additional gate preboost capacitor and a gate preboost precharge circuit for boosting the gate voltage to 3 VCC to more efficiently drive the NMOS pass transistor.

Abstract: A double-sized chip assembly and method is provided for two back-to-back integrated-circuit chips which both have the same fabrication mask sets. An electrically-selectable bonding-pad connection option alternatively provides a standard, non-reversed, option NRO for a bonding-pad layout and a non-standard, reversed option RO for the layout of the bonding-pads. The double-sized, back-to-back, wire-bonded integrated-circuit chip assembly and method includes a pair of integrated-circuit chips, each having one or more reversible wire-bonding-pads. One of the chips has its wire-bonding-pads electrically reversed such that the wire-bonding pads on both chips are located near each other to accommodate wire-bonding to a common bonding finger of a lead frame. A bonding-option wire-bonding-pad has an external voltage applied to it to indicate whether the integrated-circuit chip is to provide a standard pattern for the reversible wire-bonding-pads, or a reversed pattern for the reversible wire-bonding-pads.

Abstract: A fuse-controlled, row-redundancy control system and method for a SRAM includes a multi-bit, defective-row storage array of static circuits that are programmed to store one of the address bits of a predetermined defective row of the SRAM and that includes a single fuse. The single fuse is blown to indicate a first state of the one of the address bits and is not blown to indicate a second state of the one address bit. The address bits of the predetermined defective row of the SRAM are compared with corresponding address bits of row-address signals received by the SRAM. The comparator includes a fuseless, exclusive logic circuit and provides a RFLAG control signal that indicates that the stored address bits of the defective row of the SRAM match the respective received row address bits for the SRAM.

Abstract: A connection system for Yachts comprising a lightweight rope loop (2) and a body part for connecting sheets, sails and blocks. A tensile connecting device comprises a high strength fiber rope with a first enlarged terminated end that is held captive in a second body part having a shoulder (59a) such that said elongated loop is slipped over said shoulder to form a quickly connected and disconnected tensile joining device.

Abstract: A smart memory includes a memory array and one or more memory-intensive additional functions, all packaged in a standard memory package that has substantially the same fit and form as a standard integrated-circuit memory. One type of smart memory chip is a multi-media RAM (MMRAM) chip that provides on a single integrated-circuit chip a memory array and a compressor/decompressor (CODEC) section where connections between the memory array section and the CODEC section are on the single integrated-circuit die. The smart memory eliminates the need for additional special function integrated-circuit packages and significantly reduces the clock rate and the power consumption of a baseband chip in a personal communication device.

Abstract: To alleviate the crosstalk between BL and BLN of the same column, the present invention provides vertical twisting for the bit line and the complementary bit line of a line pair connecting a column of memory bits to a sense amplifier. The BL and BLN run in the same direction, but never within same metal layer and never overlying each other. To provide vertical twisting, horizontal and vertical switching are done in the same crossover channels so that BL and BLN have the same length in order to keep the overall capacitance of each line the same. Triple standard twist regions can be used for both the horizontal and vertical twists. The capacitance between BL and BLN are substantially reduced as well as the capacitance to neighboring column BLs and BLNs. Capacitive coupling between a BL and a BLN of the same column is reduced to thereby prevent reduction of the voltage difference, or delta voltage, presented to the differential input terminals of a senseamp.

Abstract: A method and queuing circuit are provided for storing asynchronous external RAS access requests and for executing corresponding RAS cycles. When no current external access RAS cycle is currently underway a first request latch or similar storage element is set in response to an initial access request. When access to the memory begins in a RAS cycle, this first request latch is reset. When a RAS cycle is currently underway, a second request-queuing latch is set in response to a new, second access request that occurs. Whenever a RAS cycle is completed, if the second queuing latch is set, a new RAS cycle is initiated and both the first and the second latches are reset. Any subsequent new access request may then be queued if the subsequent new access request arrives prior to completion of the current second access cycle.

Abstract: A double-sized chip assembly and method is provided for two back-to-back integrated-circuit chips which both have the same fabrication mask sets. An electrically-selectable bonding-pad connection option alternatively provides a standard, non-reversed, option NRO for a bonding-pad layout and a non-standard, reversed option RO for the layout of the bonding-pads. The double-sized, back-to-back, wire-bonded integrated-circuit chip assembly and method includes a pair of integrated-circuit chips, each having one or more reversible wire-bonding-pads. One of the chips has its wire-bonding-pads electrically reversed such that the wire-bonding pads on both chips are located near each other to accommodate wire-bonding to a common bonding finger of a lead frame. A bonding-option wire-bonding-pad has an external voltage applied to it to indicate whether the integrated-circuit chip is to provide a standard pattern for the reversible wire-bonding-pads, or a reversed pattern for the reversible wire-bonding-pads.

Abstract: A node predisposition circuit for driving an output node of an output buffer circuit is provided which is formed of a delay circuit, a pre-charge pull-up circuit, and a pre-charge pull-down circuit. The pre-charge pull-up and pull-down circuits are used for pre-charging the output node to approximately one-half of the power supply voltage with a single phase system. The predisposition circuit has significantly reduced supply bounce and ground bounce, but yet maintains a high speed of operation with minimal static current.

Abstract: Virtual gaming is provided at a remote location on-site or off-site of the casino premises using live multimedia video or restricted pre-recorded video from autonomous randomly selected live casino games. The restricted pre-recorded video could be obtained from prior casino security video or from closed regulated tournament video recordings. The multimedia video source is at a casino and provides video signals depicting a number of various legally-authorized live casino games. An accounting subsystem manages the compensation, credit accounts, and authentication for a remote player. A communication distribution hub connects the multimedia video source and the player accounting subsystem to a remote player station. The remote player station includes an appropriately secured display for displaying to a remote player the multimedia video signal depicting the legally-authorized live casino game or a pre-recorded legally randomized casino game.

Abstract: An on-chip parallel/load, serial-shift shift register stores information bits for one or more chip parameters. The bits are represented by fuses that are connected to respective input terminals of the shift register. When the chip is not in test mode (TM), the fuses are electrically connected to respective cells of the shift register, and the output of the shift register is electrically isolated from an output buffer. When the chip is put into test mode, the electrical connections between the fuses and the shift register bits are broken, leaving the fuse information isolated in the shift register. The test mode also connects the output of the shift register to the output buffer and the output of the first shift register bit is seen on the output pin. The rest of the shift register information bits are serially shifted out of the shift register by toggling the CEB pin.