Abstract: An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

Abstract: The present invention provides a method and apparatus for delivering one or more process gases and one or more cleaning gases into one or more processing regions. The gas distribution system includes a gas inlet and a gas conduit, each disposed to deliver one or more gases into the chamber via a desired diffusing passage. Also, a gas delivery method and apparatus for splitting a gas feed into multiple feed lines is provided having a gas filter disposed upstream from a splitting coupling disposed in the line.

Abstract: A pile forming system and method for forming a pile. The pile forming system comprises a top pile forming member, a bottom pile forming member, and an end plate assembled together to provide a complete pile form which can then be filled with concrete to form the pile. Additionally, the pile forming system incorporates a tip forming member which can be secured to one end of the pile form to form a sharp tip at one end of the pile facilitating driving the pile into a subsurface. Additional pairs of top and bottom pile forming members may be joined end to end to form longer piles. After the desired pile form is assembled, concrete is poured or pumped into the pile form through openings on the top surface of the pile form. Preferably, reinforcement bars or rebars which are coated with a non-permeable coating to prevent rust are placed in the pile form before the pouring of the concrete.

Abstract: A vacuum loadlock is provided for housing a pair of wafers in proper alignment for concurrent processing. In one embodiment, a single chamber loadlock is provided with a gas diffuser disposed therein to decrease venting times within the loadlock. In another embodiment, a dual chamber loadlock is provided having first and second isolatable regions disposed adjacent a transfer region to increase throughput of the system.

Abstract: The present invention provides a wafer cassette generally comprising one or more wafer support plates defining two or more coplanar wafer seats, a movable stem supporting the wafer support plates, and an actuating member connected to the stem to move the wafer support plates.

Abstract: The present invention provides a method and apparatus for cleaning deposits in a chemical vapor deposition ("CVD") chamber equipped for generating a plasma. A gas supplying line is connected to the CVD chamber to deliver a cleaning gas that reacts with the deposits formed therein. When all of the deposits have been reacted and the chamber is clean, the pressure in the chamber will change, either increasing or decreasing. A pressure detector located beyond an adjustable valve in the exhaust line allows the reaction end point to be determined, while allowing the adjustable valve to maintain a constant pressure in the chamber itself.

Abstract: A vacuum loadlock is provided for housing a pair of wafers in proper alignment for concurrent processing. In one embodiment, a single chamber loadlock is provided with a gas diffuser disposed therein to decrease venting times within the loadlock. In another embodiment, a dual chamber loadlock is provided having first and second isolatable region disposed adjacent a transfer region to increase throughput of the system.

Abstract: A remote source of partially ionized plasma gas having ions and excited neutral atom species therein is provided. A chamber having a metallic outer shell and an inner insulative tube, is operated as a microwave resonant cavity, preferably having a diameter of about one quarter of the operating wavelength. A waveguide couples microwave energy from a source to a slot cut into the metallic outer shell of the cavity. Microwave energy passes through the inner energy transparent tube and excites reactant gases supplied from an input tube. Plasma is conducted from the cavity by a plasma output tube coupled into a processing chamber and controlled pressure pumping system.

Abstract: An apparatus for lifting an object in a sealed chamber and transferring an object from a robot to an operating member has a pair of concentrically mounted support members. A lower support member positioned within the chamber extends through an opening in the chamber is adapted to lift a wafer from a robot. A motion actuator positioned outside the chamber and attached to the lower support member is adapted to move the lower support member axially. An upper support member positioned within the chamber above the lower support member extends through an axial passageway in the lower support member to a position external the chamber and below the lower support member. A separate motion actuator positioned outside the chamber and attached to the upper support member is adapted to move the upper support member axially. A flexible vacuum bellows positioned in the chamber and between the upper support member, the lower support member, and the chamber provides a seal therebetween.

Abstract: A lock mechanism is provided which may actuate both a deadbolt and flush bolts in response to a single lock movement. The mechanism includes a dual element bolt throw and flush bolt actuator, which locks in place in the extended position if the end of the bolt is pressed inwardly. The throw includes a transfer mechanism which translates the horizontal movement of the bolt to vertical movement at the flush bolts. The flush bolts also include a mechanism to limit retraction thereof if the extending end of the flush bolt is exposed to inward directed force. The entire lock mechanism may be actuated by a standard cylindrical lockset having actuating jaws extending therefrom. The lock mechanism case may include an aperture therein, through which the handle housing extends, which aligns the jaws in the handle housing with the rear end of the bolt.

Abstract: The present invention provides a heating member that can be molded inside cavities, between individual members or encapsulating components to provide efficient and uniform heat transfer. The invention may be used to advantage around pipes or vessels for heating the contents, within members for providing heat to adjacent members or workpieces, and in any other application where heat can be more efficiently or uniformly provided by intimate contact with a member to be heated, whether or not the member to be heated is the ultimate member or workpiece requiring heat. In one aspect of the invention, a heating member is disposed within an electrostatic chuck to provide direct conductive heating of the electrostatic chuck and, ultimately, a silicon wafer up to temperatures as high as about 600 degrees Celsius.

Abstract: The present invention provides a method and apparatus for introducing gases into a processing chamber and cleaning isolated surfaces thereof. In one embodiment, the apparatus provides a gas distribution system which comprises a face plate and a blocker plate located adjacent the face plate wherein the blocker plate is electrically insulated from the face plate. An RF power source is electrically connected to the face plate and a switch that selectively connects the blocker plate to the RF power source or grounds the blocker plate. When the power source is applied to the faceplate and the blocker plate is grounded, an energy potential is formed between the face plate and the blocker plate. The energy potential is sufficient to strike a plasma from cleaning gases introduced into the gas distribution system to clean the apertures and surfaces of both the face plate and the blocker plate.

Abstract: An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.

Abstract: A vacuum system bakeout process is performed by cycling the system between two pressures, pumping the system down to a lower pressure, and holding the system at that lower pressure for a period of time. A gas, such as argon gas, is introduced into the system. This gas introduction is done while cycling between the two pressures. The pump is used to lower the pressure during cycling, and the gas flow is used to raise the pressure. A rough pump performs the cycling between pressures, and then a high vacuum pump evacuates the system to the lower pressure.

Abstract: An interlocked connector having integral interlock components such as a spring biased pin in a female connector which actuates an interlocked switch whenever the female connector is mated with a male connector. The interlocked switch interrupts a power source to avoid a dangling live connector.

Abstract: A method for detecting dimethylaluminumhydride (DMAH) comprises sensing the aluminum oxide particles produced by the reaction of the DMAH with air (or with a small amount of oxygen). This is accomplished using a particle-sensing device, such as those commonly used to detect smoke, particularly an ionization-type detector.

Abstract: The present invention is a process for planarization of substrate layers comprising apertures to form continuous, void-free contacts or vias in sub-half micron applications. A CVD silicon or metal silicide wetting layer is deposited onto the substrate layer comprising apertures to provide a conformal wetting layer for a PVD metal layer. The PVD metal layer is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The CVD layer diffuses into the PVD layer and the resulting conductive layer is substantially void-free. The planarization process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of vias and contacts occurs without the formation of an oxide layer over the CVD wetting layer.

Abstract: A method and apparatus for noncontact temperature measurement of a substrate insitu by measuring the temperature of a substrate support member and an intermediate member located between the substrate and the substrate support member. The intermediate member has a given heat transfer surface area adjacent both the substrate and the substrate support member and high thermal conductivity so that the intermediate member rapidly approaches a steady state surface temperature after the substrate is positioned in the substrate support member. In this arrangement, the temperature of the substrate can be determined either by calibration or application of a heat transfer equation. Various temperature measuring instruments may be used, including a light probe located in the substrate support member normal to the surface of the intermediate member to measure the radiation from a temperature sensitive material deposited on the bottom surface of the intermediate member.

Abstract: Apparatus and method are disclosed for adjusting the alignment of surfaces in close proximity. The apparatus includes at least three travel sensitive switches fixed in a non-linear configuration, each switch having a known actuating distance, and a display connected to the switches to show the status of each switch. In order to align two surfaces in parallel, the switches have essentially the same actuating distance. The switches are placed between the surfaces and the surfaces are moved together until the display shows that one or more switches is actuated. The information provided by the switches guides alignment of the surfaces to achieve essentially simultaneous actuation of all switches having actuating distances which correspond to a desired alignment when the surfaces are moved within the actuating distances of the switches. A second set of at least three travel sensitive switches having a smaller actuating distance than the first set of switches can be used to simplify the alignment process.

Abstract: A semiconductor processing chamber includes a substrate support member on which a substrate and a clamp ring are aligned during processing in the chamber. To align the substrate on the support member, a frustoconical substrate alignment member extends about the perimeter of the substrate receiving surface of the support member to capture a substrate received in the chamber and center the substrate on the upper surface of the support member. The alignment member includes an alignment face thereon, which urges a substrate into alignment with the substrate receiving face of the support member as the substrate is deposited on the support member. To clamp the substrate in proper alignment on the support member and flatten any warpage in the substrate, a clamp ring alignment member is provided which aligns and supports a clamp ring on a substrate without causing significant shadowing of the substrate. The clamp ring is vertically and laterally aligned relative to the support member and substrate centered thereon.