Abstract: The present invention provides a process for depositing a planarized metal film on a dielectric surface having nonuniform conductor material deposits formed thereon. The planarized metal layer is formed using a warm physical vapor deposition process at a temperature greater than about 150.degree. C., preferably greater than about 250.degree. C. The nonuniform deposits of electrically conducting material are typically formed during selective chemical vapor deposition of a metal in high aspect ratio, subhalf micron apertures. The selective CVD deposition is directly followed by warm physical vapor deposition to obtain a planarized metal film. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form interconnects occurs without the formation of oxides between the layers.

Abstract: The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

Abstract: The invention provides in improved proton exchange membrane for use in electrochemical cells having internal passages parallel to the membrane surface, an apparatus and process for making the membrane, membrane and electrode assemblies fabricated using the membrane, and the application of the membrane and electrode assemblies to a variety of devices, both electrochemical and otherwise. The passages in the membrane extend from one edge of the membrane to another and allow fluid flow through the membrane and give access directly to the membrane for purposes of hydration.

Abstract: The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

Abstract: A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a clamp ring suspended in the chamber on a chamber shield. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the clamp ring off the shield. After deposition is complete, the support member retracts through the shield, to reposition the clamp on the shield. In the event that a deposition material layer has formed between the substrate and the clamp ring, the clamp ring includes a plurality of actuators thereon which force the substrate out of the clamp ring as the clamp ring is repositioned on the shield.

Abstract: The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region.

Abstract: The present invention provides a method and apparatus for chemically heating by feeding hydrogen to a catalyst. The invention also provides a method and apparatus for thermally conditioning a catalyst in order to enhance the conversion of unacceptable emissions emanating from an internal combustion engine into water and other acceptable emissions. In one aspect of the invention, hydrogen is supplied from an electrolyzer or other hydrogen source and injected into the monolith of a catalytic converter to more rapidly bring the catalyst to a light-off temperature.

Abstract: A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.

Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome to provide a plasma source. The antenna generates a high density, low energy plasma inside the chamber. The chamber includes a plurality of magnets for generating magnetic fields. Ion flux is concentrated in certain areas of the chamber and is diverted from other areas of the chamber by using these magnetic fields. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides a means of cleaning the deposition residues from the reactor walls while minimizing damage to the wafer pedestal.

Abstract: A lock mechanism is provided which may actuate both a deadbolt and flush bolts in response to a single lock movement. The mechanism includes a dual element bolt throw and flush bolt actuator, which locks in place in the extended position if the end of the bolt is pressed inwardly. The throw includes a transfer mechanism which transposes the horizontal movement of the bolt to vertical movement at the flush bolts. The flush bolts also include a mechanism to limit retraction thereof if the extending ends of the flush bolt is exposed to inward directed force. The entire lock mechanism may be actuated by a standard cylindrical lockset having actuating jaws extending therefrom.

Abstract: A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.

Abstract: The present invention provides a method and apparatus for reducing the concentration of mobile ion and metal contaminants in a processing chamber by increasing the bias RF power density to greater than 0.051 W/mm.sup.2 and increasing the season time to greater than 30 seconds, during a chamber seasoning step. The method of performing a season step in a chamber by depositing a deposition material under the combined conditions of a bias RF power density of about 0.095 W/mm.sup.2 and a season time of from about 50 to about 70 seconds, reduces the mobile ion and metal contaminant concentrations within the chamber by about one order of magnitude.

Abstract: The present invention provides a method and apparatus for protecting the edge of a substrate and securing the substrate to the support member during processing. The present invention preferably provides minimal contact with the substrate and provides improved edge exclusion. Support tabs extend inwardly from the lower roof surface to support the apparatus on the substrate and the inner terminus of the apparatus approaches the edge of the substrate to provide the improved edge exclusion. A variable height lower roof surface is provided over the edge of the substrate to provide an effective increased roof aspect ratio (width of the roof:height of the roof above the substrate) over the edge of the substrate which reduces the likelihood that a bridging layer will form between the apparatus and the substrate or beyond the substrate.

Abstract: An integrated system for land and water recreation such that when in a flotation mode, a propeller and rudder are powered and controlled by a standard bicycle; that when in a terrestrial mode, the integrated system is powered and trailered by the same bicycle. The flotation device having a propeller drive assembly and steerable rudder for use with any standard bicycle frame allowing an individual the ability to have a self-propelled water craft. The device utilizes a standard bicycle, having only the wheels removed, to provide power and steering. The bicycle is mounted to the flotation device with the chain wrapped around the chain drive sprocket of the propeller drive assembly. Because the chain drive sprocket is a standard Shimano sprocket, the bicycle's rear derailleur may be used to shift gears. The operator may pedal the device across a body of water, then remove the bicycle frame and remount the tires to continue travel over land.

Abstract: A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.

Abstract: An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate edge protection system includes a ring, which is received over a substrate received on the substrate support member and which is alignable with the substrate to provide a minimum gap between the edge of the substrate and the ring.

Abstract: The present invention provides a robot assembly for transferring objects, namely substrates, through a process system. A robot linkage is provided to a multi-plane, multi-arm robot assembly driven by two motors. In one embodiment, a linkage is provided which is driven by two magnetic retaining rings. In another embodiment, a linkage is provided which is driven by three magnetic retaining rings, two of which are coupled to the same motor. Both embodiments enable a substrate shuttle operation to be performed wherein a pair of substrates can be shuttled into and out of a selected chamber without having the robot assembly rotate in the transfer and by actuation of only two motors.