Abstract: A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

Abstract: An RNG circuit is connected to the parallel port of a computer. The circuit includes a flat source of white noise and a CMOS amplifier circuit compensated in the high frequency range. A low-frequency cut-off is selected to maintain high band-width yet eliminate the 1/f amplifier noise tail. A CMOS comparator with a 10 nanosecond rise time converts the analog signal to a binary one. A shift register converts the serial signal to a 4-bit parallel one at a sample rate selected at the knee of the serial dependence curve. Two levels of XOR defect correction produce a BRS at 20 kHZ, which is converted to a 4-bit parallel word, latched and buffered. The entire circuit is powered from the data pins of the parallel port. A device driver interface in the computer operates the RNG. The randomness defects with various levels of correction and sample rates are calculated and the RNG is optimized before manufacture.