Abstract: A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.

Abstract: An optical waveguide (34) is formed in a substrate (32) made of an electro-optic material. A plurality of stripline electrodes (36) are formed on the substrate (32) in spaced relation along the optical waveguide (34). A stripline antenna (38) is connected to the upstream end of each electrode (36). An electromagnetic waveguide (40) directs an electromagnetic signal to the antennas (38), which couple the electromagnetic signal to the electrodes (36). The electromagnetic signal propagates along the electrodes (36) and electro-optically modulates an optical signal propagating parallel thereto through the optical waveguide (34).

Abstract: A fluoride glass is prepared by depositing a solid including a metal fluoride on a heated substrate, from a gaseous mixture of a nonmetallo-organic compound, carbon dioxide, and a source of carbonyl fluoride. The nonmetallo-organic compound contains the metallic cation of the metal fluoride bonded to an organic species through an electronegative element such as oxygen, but not directly to a carbon atom. The carbon dioxide, or optionally another species reactive with carbon to produce a gas, oxidizes solid carbon and other reduction products of the organic compound that could otherwise be present in the deposited metal fluoride to impair optical properties of the fluoride glass. The carbonyl fluoride, supplied by the gas itself or by reactants that produce the gas, reacts with the nonmetallo-organic compound without producing water, which would otherwise degrade the glass purity.

Abstract: A process is provided for the controlled growth of titanium carbide. Essentially, relatively fast, or low temperature growth, favors growth of single crystals having (100) orientation, while relatively slow, or high temperature growth, favors single crystals having (111) orientation. The process obviates the need for any seed crystals and permits growth of rods having diameters exceeding 1 cm.

Abstract: A generally T-shaped gate is formed by electron beam irradiation of a multilevel resist structure on a substrate. The resist structure has an upper layer which is more sensitive to the electron beam than a lower layer thereof. A generally T-shaped opening is formed in the resist structure by etching of the irradiated areas. An electrically conductive metal is deposited to fill the opening and thereby form a T-shaped gate on the substrate. After the resist layer structure and metal deposited thereon is removed, a masking layer is formed on the substrate around the gate, having an opening therethrough which is aligned with and wider than the cross section of the gate, and defining first and second lateral spacings between opposite extremities of the cross section and adjacent edges of the opening. Deposition of an electrically conductive metal forms source and drain metallizations on the substrate on areas underlying the first and lateral spacings respectively.

Abstract: A device useful both as a switch and power limiter and particularly adapted for use in microwave application. The device is made with conventional FET processing technology, a current conducting layer being formed at a surface of a substrate, the device then being electrically isolated by using any one of a number of conventional processes. Ohmic contacts are deposited to make electrical contact at the conducting layer. A groove is then cut with a focused ion beam across the conducting layer and between the ohmic contacts. The length of the groove controls the threshold voltage for the device and the depth controls the saturation current. Very low values of saturation current can be obtained by controlling the groove dimensions thus significantly reducing the DC power drain when the device is operated just above saturation. A very high differential resistance ratio is obtained by adjusting the threshold voltage of the device.

Abstract: A depression is formed by mesa etching or the like in the surface of an insulative substrate. A first semiconductive layer structure such as a PNP layer structure is formed on the surface including the depression. An electrically insulative isolation layer is formed on the first layer structure, and then a second layer structure such as an NPN layer structure is formed on the isolation layer. The area over the depression is then masked, and the second layer structure and isolation layer are etched away from the first layer structure over areas of the surface external of the depression. Where the thicknesses of the first and second layer structures are equal, and the depth of the depression is equal to the combined thicknesses of the first layer structure and the isolation layer, the second layer structure laterally external of the depression will be coplanar with the first layer structure over the depression.

Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert.

Abstract: A high value, precision resistor (10) includes a doped region (18) having a boustrophedonic (folded or meandering) shape formed in a substrate (12). At least one section of the doped region (18) is formed by implantation using a focused ion beam. Where the entire doped region (18) is formed by the focused ion beam, the length thereof is selected to be large (10 to 100 times the width of the boustrophedonic shape) to maximize the accuracy of the resistor (10) by averaging over variations in grain size and implant dose. Alternatively, a probe resistor (32) and a plurality of similar unconnected doped sections (28) may be formed by means such as photolithography and flood ion implantation. The probe resistor (32) is measured at the desired operating temperature to determine the ratio of the measured resistance to the desired design resistance value.

Abstract: An integrated circuit structure and method of forming the same is described in which a plurality of common signal planes are provided for an integrated circuit formed on a layer of semiconductive material (30). The common planes consist of a single crystal semiconductive substrate (2) and at least one conductive layer (26, 66) between the substrate (2) and the semiconductive circuit layer (30), with insulative layers (24, 28, 68) separating the conductive layers (26, 66) from each other and from the substrate (2) and semiconductive layer (30). When one conductive layer (26) is used, a power supply signal (V+) is preferably applied to the substrate (2) and a ground reference to the conductive layer (26). Contacts are made between the integrated circuit and the desired common planes by metallized contacts (56, 60) formed in openings (54, 58) through the underlying material. Various circuit signals can also be introduced through additional conductive layers.

Abstract: An optical cement system having an index of refraction of 1.50 or less, which can be used to bond pieces of optical quality glass during the preparation of devices. The surfaces of the glass pieces to be bonded are treated with an organosilane to produce activated sites, to which the adhesive forms a chemical bond. The adhesive is prepared by mixing together a transparent polymerizable monomer having a refractive index of 1.50 or less, a thickener, and an initiator. The adhesive is flowable, and its consistency is determined by the nature of the thickener. A layer of the adhesive is placed between the pieces of organosilane-treated glass, and polymerized by ultraviolet light or other energy, bonding the pieces of glass together with an adhesive having a refractive index less than that of the glass.

Abstract: Metal sulfides are prepared by reacting a compound of the metal and an oxygen-containing anion, with a source of carbonyl sulfide. The resulting metal sulfide is not contaminated by hydrogen, as in the form of hydroxides, and is suitable for use in photoluminescence and electroluminescence applications. The starting material is preferably a metal oxalate, which may be appropriately doped, and the source of the carbonyl sulfide is preferably a mixture of carbon monoxide and sulfur dioxide (to produce a reducing mode) or a mixture of carbon dioxide and carbon disulfide (to produce an oxidizing mode). Oxyanions that decompose to a produce a nascent oxygen anion, as does the oxalate, are preferred, as they can be reacted to achieve a high conversion rate to the sulfide.

Abstract: P-type doping of a molecular beam epitaxy (MBE) grown substrate composed of a Group II-VI combination is accomplished by forming a flux from a Group II-V combination, and applying the flux to the substrate at a pressure less than about 10.sup.-6 atmosphere. The Group II material is selected from Zn, Cd, Hg and Mg, the Group V material from As, Sb and P, and the Group VI material from S, Se and Te. The Group II-V dopant combination is preferably provided as a compound formed predominantly from the Group II material, and having the formulation X.sub.3 Y.sub.2, where X is the Group II material and Y is the Group V material. The doping concentration is controlled by controlling the temperature of the Group II-V combination. Metal vacancies in the lattice structure are tied up by the Group II constituent of the dopant combination, leaving the Group V dopant available to enter the Group VI sublattice and produce a p-type doping.

Abstract: A preform for preparation of optical fibers is prepared by inserting a rod of a higher index of refraction fluoride glass into the bore of a hollow cylinder of a lower index of refraction fluoride glass fiber. This preform precursor is processed to collapse the hollow cylinder inwardly to form a composite preform having a high-refractive index core and a low-refractive index casing. The preparing of the glasses and processing to a preform are accomplished in a reactive environment that reacts and removes oxygen and hydrogen containing species from the glass, the reactive environment being, for example, Cl.sub.2, CCl.sub.4, SF.sub.6, BF.sub.3, CF.sub.4, or the decomposition products of a liquefied solid fluorocarbon. The preform is then drawn to an optical fiber.

Abstract: A lateral bipolar phototransistor having a floating, photosensitive base region is formed in a silicon layer on an insulator substrate. Insulated gate electrodes are formed above and below the base reigon and are voltage biased to create a field effect causing majority carriers to accumulate in the base region. The majority carriers accumulate in layers which face the respective gate electrodes and extend between an emitter and collector of the bipolar transistor. A bias voltage applied to the gate electrodes has a polarity opposite to a polarity of the majority carriers in the emitter and collector regions and is sufficiently high to bias field effect transistors constituted by the gate electrodes in combination with the emitter, base and collector of the bipolar phototransistor into cutoff. The accumulation creates a depleted base region with reduced parasitic capacitance and resistance, thereby enabling higher frequency operation and current gain.

Abstract: An ion cluster beam can be focused and delivered to a target with a selected energy range by directing the ionized beam through a beam crossover, and furnishing an energy-selecting apertured plate adjacent to the beam crossover so that the center of the beam passes through the aperture. The beam crossover is distributed along the beam axis due to the different energies of the particles in the beam. The apertured plate in the beam path removes from the beam those clusters having energies lower than and/or greater than an acceptable energy range, depending upon its placement and diameter, to provide energy selectivity. The portion of the beam passing through the aperture is imaged upon the target by a lens, and the beam may be deflected by deflector coils to write patterns across the surface of the target.

Abstract: A pulsed beam from an excimer laser is used for precision ablation of cadmium telluride (CdTe) and other materials to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material, such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask and optical system onto a material to form an image for patterned ablation. The optical system may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.

Abstract: A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.

Abstract: An ion evaporation source for tin ions is prepared by coating a source element with a wettability enhancing gallium coating, and then loading the source with tin. The tin may be the naturally occurring tin, but can be an enriched tin containing a higher concentration of Sn.sup.120. The source produces a beam having a high fraction of Sn.sup.+ and Sn.sup.++ ions, and a small amount of the ionized wettability coating material. All but the desired ions are readily separated from the beam.

Abstract: A type II staggered alignment multiple quantum well (MQW) is integrated into a laser cavity to implement an active Q-switched device. The MQW initially absorbs and stores energy to prevent the device from lasing. In response to an applied electric field, the MQW experiences a sudden charged carrier population inversion and emits a strong, short duration pulse having a directionality conincident with that of the beam within the lasing cavity. A generalization of the invention involves optical amplification in which photon energy is first stored in a type II staggered alignment MQW, followed by the simultaneous application of an electric field and an optical beam to the MQW, such that the stored energy is released in a sudden pulse which is amplified with respect to the applied optical beam, and is co-directional with the applied beam.