Abstract: A shared sense amplifier driver technique for integrated circuit devices including an array of memory cells comprises a plurality of sense amplifiers couplable to the memory cells with each of the sense amplifiers having an associated pull-up and pull-down switching device respectively coupled to a first and second latch node thereof. A first subset of the plurality of sense amplifiers have their first latch node (e.g. latch P-channel “LP”) electrically coupled and a second differing number subset of the plurality of sense amplifiers have their second latch node (e.g. latch N-channel “LN”) electrically coupled. By sharing the selected LP and LN nodes with more than one sense amplifier in a column, “write” recovery time can be significantly improved over that of conventional layouts and designs.

Abstract: A logic circuit has two internal voltage lines and includes additional upper and lower MOS transistors for coupling the external voltage supplies to the internal voltage nodes instead of using a single diode or transistor. These additional devices serve to clamp the internal voltages to a level that minimizes leakage current and maintains the data in the logic circuits.

Abstract: An improved integrated circuit area efficient redundancy multiplexer circuit technique provides similar functionality to conventional CMOS transmission, or “pass” gates while concomitantly reducing circuit complexity, the die area necessary to support redundant elements and complementary control signals in memory device ICs and undesired parasitic capacitance. The technique of the present invention effectuates this end by utilizing the on-chip boosted voltage levels (Vpp) which are generally available in integrated circuit memory devices to supply the voltage for the control signal applied to a single N-channel transistor pass gate instead of the conventional supply voltage level of Vcc. The Vpp voltage and circuit ground (“GND”) are then utilized as the logic “high” and “low” signal levels respectively. This use is made possible due to the fact that these control signals operate at a direct current (“DC”) level after device power-up.

Abstract: A method and system for hiding DRAM cycle time behind burst read and write accesses. A combined read and write data transfer area interacts with a set of sense amplifiers to accelerate read and write cycles. By independently isolating the read data transfer areas and the write data transfer areas, data can be transferred (1) from the DRAM array to the read data transfer areas, (2) from the write data transfer areas to the DRAM array, and (3) from the write data transfer areas to the read data transfer areas.

Abstract: A system and method for eliminating pulse width variations in digital delay lines partitions a delay line into two substantially identical blocks of delay inverters, inserting a first inverter between the two blocks and a second substantially identical inverter at the output of the second block. The requirement for matching device characteristics at the individual delay inverter level is eliminated and the only requirement is that the parasitic loading of the inverter between the blocks and the inverter on the output of the second block be the same. Consequently, the layout of the delay inverters in a single block may be made in the most efficient manner possible and the same identical layout can be used for the first and second blocks.

Abstract: A data bus architecture for integrated circuit embedded dynamic random access memory (“DRAM”) having a large aspect ratio (length to width ratio) which serves to reduce power requirements in the data path through the use of multiple metal layers to reduce capacitance on the data busses. This architecture is particularly advantageous for use in addressing data bussing problems inherent in integrated circuit devices having embedded DRAM with a large aspect ratio as well as a relatively large number of input/outputs (“I/Os”) which must be located along one narrow side of the memory. In accordance with the present invention, the memory is divided into multiple sections with data bussing in those sections routed in one metal, or conductive, layer. A different metal layer is used to route global data across these sections to a data register located on one edge of the memory.

Abstract: An implementation of 1T/1C nonvolatile ferroelectric RAMS without using any reference cells—the polarization state in a memory cell is determined by applying two consecutive plate pulses on the ferroelectric capacitor in the memory cell, preamplifying the bit line voltages corresponding to these two plate pulses, and comparing the preamplified voltages. The two consecutive plate pulses have the same polarity.

Abstract: A FRAM configurable output driver circuit allows the user to configure the output driver for either CMOS level push/pull operation or true open drain operation. This configuration is stored in a non-volatile memory including a FRAM cell and a standard logic latch. The configuration data is restored to the latch on powerup. The user is able to change the configuration at any time. Any changes to the configuration are stored in the non-volatile memory.

Abstract: A boosting circuit for a ferroelectric memory using a NAND-INVERT circuit to control one electrode of a ferroelectric boosting capacitor. The other node of the capacitor is connected to the node to be boosted, which may be coupled to a word line. The NAND circuit has two inputs, one being coupled to the word line and another for receiving a timing signal. The timing input rises to initiate the boosting operation, and falls to initiate the removal of the boosted voltage. Only the selected word line in the memory array is affected as any word line remaining at a low logic level “0” will keep the inverter output clamped low. A second embodiment adds a second N-channel transistor in series with the inverter's N-channel transistor to allow for the option of floating the inverter output if it is desired to more quickly drive the word line high during its first upward transition.

Abstract: A method of patterning and etching an integrated circuit ferroelectric capacitor uses a layer of PZT which has the same composition as the capacitor PZT as a temporary encapsulation during PZT grain growth annealing. The temporary encapsulation PZT also serves as a hard mask to pattern the top electrode and the capacitor PZT layers for a capacitor-on-oxide structure, i.e., two-layer-one-step patterning. The process of the present invention can also be modified as a three-layer-one-step patterning process and can be applied to a capacitor-on-plug structure.

Abstract: A local write driver circuit for an integrated circuit device memory array which requires only a single write enable signal to couple complimentary data signals between global and local write data lines thereby obviating the need to provide complementary write enable signals as in conventional implementations. By eliminating the need for a second complementary write enable signal line, less on-chip die area is required for the signal path along with a concomitant reduction in power requirements due to the fact that there is one less line which has to switch during a given write cycle.

Abstract: An octal transparent latch or D-type register (or flip-flop) integrated circuit device may be packaged in an industry standard logic pin-out and configuration but having nonvolatile properties such as automatically recording the output state in nonvolatile form and restoring it on power up. The nonvolatile memory elements are ideally ferroelectric capacitors, using well known ferroelectric materials such as PZT, SBT, or BST or other ferroelectric materials. EEPROM, Flash, SNOS, or other writeable nonvolatile technologies can also be used. In a particular embodiment disclosed herein, the nonvolatile elements of the integrated circuit device are written only when the latched state changes to reduce write endurance changes thereto and data changes on either the input or output data lines that are not latched have no effect.

Abstract: A ferroelectric capacitor stack for use with an integrated circuit transistor in a ferroelectric memory cell is fabricated by: forming a first dielectric layer over the integrated circuit transistor; forming a bottom electrode over the first dielectric layer, the bottom electrode having a hole located over a first source/drain of the integrated circuit transistor; forming a second dielectric layer over the first dielectric layer and bottom electrode; forming a hole in the second dielectric layer to provide access to the bottom electrode; forming a ferroelectric plug in the hole in the second dielectric layer; forming a top electrode over the second dielectric layer and ferroelectric plug; forming a third dielectric layer over the second dielectric layer and top electrode; forming a first via through the first, second, and third dielectric layers, and through the hole in the bottom electrode, the via having sufficient width to provide access to a lateral edge of the bottom electrode hole; forming a second via

Abstract: A method, and associated apparatus, for eliminating pulse width variations in digital delay lines. The method includes partitioning the delay line into two substantially identical blocks of delay inverters and inserting a first inverter between the two blocks and a second substantially identical inverter at the output of the second block. The requirement for matching device characteristics at the individual delay inverter level is eliminated, and the parasitic loading of the inverter between the blocks and the inverter on the output of the second block is the same. Since the rising edge input to the first block becomes a falling edge input to the second block as it propagates through the delay line, the rising and falling input edges will encounter an identical set of transitions as they propagate through the two blocks.

Abstract: A double data rate (“DDR”) synchronous dynamic random access memory (“SDRAM”) device incorporating a static random access memory (“SRAM”) cache per memory bank that provides effectively double peak data bandwidth, optimizes sustained bandwidth and improves bus efficiency as compared with conventional DDR SDRAM devices. The memory device disclosed provides effectively faster basic DRAM memory latency parameters, faster page “hit” latency, faster page “miss” latency and sustained bandwidth on random burst reads, faster read-to-write latency and write-to-read latency, hidden precharge, hidden bank activate latency, hidden refresh and hidden write precharge during a read “hit”.

Abstract: A multi-layer ferroelectric thin film includes a nucleation layer, a bulk layer, and an optional cap layer. A thin nucleation layer of a specific composition is implemented on a bottom electrode to optimize ferroelectric crystal orientation and is markedly different from the composition required in the bulk of a ferroelectric film. The bulk film utilizes the established nucleation layer as a foundation for its crystalline growth. A multi-step deposition process is implemented to achieve a desired composition profile. This method also allows for an optional third composition adjustment near the upper surface of the film to ensure compatibility with an upper electrode interface and to compensate for interactions resulting from subsequent processing.

Abstract: A memory device, and an associated method, contain at least two memory arrays and a single decoder shared by the memory arrays. When data is to be accessed from selected memory locations of one of the memory arrays, the non-selected memory array is inactivated by precharging the bit lines of the array to a common voltage with the data input and/or output buses for that array, thereby allowing the decoder to select the inactive array without harm, and thereby preventing the need for additional decoder circuitry to discriminate between the arrays. The array containing the selected memory locations remains active, thereby permitting accessing of the memory locations therein.

Abstract: A boost circuit for a ferroelectric memory operated in a low voltage supply environment is achieved by floating a local supply voltage and using a single boost via one or more appropriately sized ferroelectric boost capacitors to elevate the local supply level to the desired boosted voltage. When boosting is not required, the local supply voltage is tied to the system external power supply through an appropriately sized PMOS transistor.

Abstract: A memory cell layout for use in a 1T/1C ferroelectric memory array includes an access transistor having a gate coupled to a word line and a current path coupled between a bit line and an internal cell node, a shunt word line extending across the memory cell that is electrically isolated from the word line and the access transistor within the physical boundary of the memory cell, and a ferroelectric capacitor coupled between the internal cell node and a plate line.

Abstract: A continuous barrier layer is formed after a local interconnect metal layer is formed between the top electrode of a ferroelectric capacitor and the source/drain contact of a memory cell transistor in an integrated ferroelectric memory. After contact has been made to the top electrode of the ferroelectric capacitor, a thin dielectric layer is deposited using a material that provides an effective hydrogen barrier to the ferroelectric capacitor. The barrier layer minimizes damage to the ferroelectric capacitor and thus improves electrical performance.