Abstract: A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer.

Abstract: A magnetically operated shutter mechanism is provided that will function in cryogenic or cryogenic zero gravity environments to selectively block radiation such as light from passing through a window to a target object such as a mirror or detector located inside a cryogenic container such as a dewar. The mechanism includes a shutter paddle blade that is moved by an electromagnetically actuated torquing device between an open position where the target object is exposed to ambient radiation or light and a closed position where the shutter paddle blade shields the ambient radiation or light from the target object. The purpose of the shuttering device is to prevent the mirror or other target object from being directly exposed to radiation passing through the window located on the side wall of the dewar, thereby decreasing or eliminating any temperature gradient that would occur within the target object due to exposure to the radiation.