Abstract: A typical method for bonding a die to a substrate includes the steps of placing a solder preform onto the substrate, contacting the die to the preform and applying heat sufficient for the solder to flow and wet the substrate and die forming a bond therebetween. The present invention comprises heating the substrate and preform to a temperature below the melting point of the solder preform and thereafter maintaining this temperature while applying pressure to the preform sufficient to substantially reduce the thickness of the preform and to cause the preform to adhere to the substrate prior to contacting the die thereto.

Abstract: The formation of elongated structures, such as lines, having a linewidth substantially less than one micrometer is described. An elongated structure of a first material having opposed sides, a rounded surface between the sides and a width typically of about one micrometer or greater is formed on a substrate. The sides of the structure are at least partially coated with a layer of a second material which will etch at a slower rate than the first material. The coating may completely cover the structure. The structure is anisotropically etched. Since the coating protects the sides of the structure, etching proceeds in the center to form two parallel lines, each significantly below one micrometer in width. In one embodiment, formation of the protective coating and etching of the structure are carried out simultaneously.

Abstract: A method is disclosed for making a termination between (a) a fiber optic cable having a centrally positioned optical fiber, a plurality of reinforcement strands positioned about the optical fiber, and a jacket positioned about the reinforcement strands; with (b) an electro-optic component housing having a tubular extension. In accordance with the method of this invention, in the initial step a predetermined length of the outer jacket is removed from the fiber optic cable to expose a length of optical fiber and reinforcement strands. The optical fiber is then inserted into and through a passage in the tubular extension to a point within the component housing and preferably fixed in place. The reinforcement strands are then positioned about the outer diameter surface of the tubular extension so that portions of the outer diameter of the tubular extension are covered with the reinforcement strands and other areas are left exposed.

Abstract: The use of o-cresol novolac resin for planarizing large topographic features on a semiconductor substrate is disclosed. In addition to being a superior planarizing material, o-cresol novolac resin oxidizes and darkens upon baking to provide excellent absorption capability for the light wavelengths which are conventionally utilized to irradiate photoresist compositions. O-cresol novolac resin additionally transmits light at higher wavelengths which are used to align pattern masks with alignment keys on a substrate. These properties further make a transparent substrate coated with a patterned layer of o-cresol novolac resin useful as a lithographic mask.

Abstract: Multilayer photoresist recording media containing an absorptive layer are improved by forming the absorptive layer from a composition comprising PMMA or a copolymer of methylmethacrylate and methacrylic acid, certain dyes such as hydroxyazobenzoic acid or Sudan Orange G and a suitable solvent. The dyes are insoluble in the solvent of an overlying photoresist layer. The media are substantially free of loss of resolution due to dissolution of the dye into the photoresist layer.

Abstract: Polycide structures are etched with silicon tetrachloride. The etch is preferably carried out at a pressure of about 20 to 60 mtorr and overetching to remove stringers is then carried out at an increased pressure, i.e. at least about 100 mtorr. There is obtained an anisotropic etch with substantially no stringers or linewidth loss. When selectivity of etch vis-a-vis an underlying layer of gate oxide must be enhanced, from about 60 to 90 percent by volume of the silicon tetrachloride is replaced with chlorine just prior to completion of the etch.

Abstract: A process of forming improved ohmic contacts is disclosed. Substrates having contact openings formed in a dielectric layer thereon are cleaned under vacuum with HF/H.sub.2 O vapor wherein the temperature of the vapor is at least about 5.degree. C. lower than that of the substrate. The cleaned substrates are then metallized in-situ in a closed system, e.g. by magnetron sputtering, thus preventing air from contacting the substrate. The cleaning and metallization each require about one minute, thus making the process suitable for efficient, large-scale operation.

Abstract: A p-type impurity in a silicon semiconductor structure is at least partially neutralized by exposure to atomic hydrogen. The subject method provides an excellent means of modifying the profile of the impurity. Suitable impurities include boron, aluminum, gallium and indium.

Abstract: A video disc comprises a grooved disc having video information in the form of a surface relief pattern within the groove, the disc made from a plastic material containing finely divided conductive particles such that the bulk resistivity at 900 MHz is less than 500 ohm-centimeters.

Abstract: An improved etchant gas composition for the plasma etching of a layer of aluminum or its alloys on a substrate is provided. The etchant composition comprises boron trichloride, nitrogen and a halogenated fluorocarbon. In addition to providing an efficient, anisotropic etch, the subject etchant compositions form a passivating coating on aluminum reactor walls, protecting them from being etched and substantially reducing contamination problems. The subject compositions etch aluminum/silicon alloys without leaving a residue of slilicon "freckles" on the substrate surface.

Abstract: An improvement in the rapid alloying of aluminum metallization on a silicon substrate is provided. The structure is heated to alloying temperature for under a minute in a suitable heating means in a reducing atmosphere and rapidly cooled to under 200.degree. C. in not longer than about one minute after cessation of heating. A preferred reducing atmosphere is forming gas.

Abstract: The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by LPCVD directly onto the surface of the silicon wafer. The subject method substantially reduces the incidence of stress related defects in the silicon surface and therefore eliminates the need for a layer of pad oxide which, if present, would cause "bird's beak" formation.