Abstract: A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is comprised of four regions (I, II, III, IV) wherein the characteristic impurity profile of each region determines the maximum potential generated therein for the gate "on" and gate "off" conditions. Clocking the gate causes the potential maxima in regions I and II to cycle above and below the fixed potential maxima in regions III and IV beneath the virtual electrode. Directionality of charge transfer is thereby achieved, since the potential maximum for region II (.phi..sub.max II) remains greater than for region I (.phi..sub.max I) and .phi..sub.max IV>.phi..sub.max III, for both gate conditions.

Abstract: A heterodyne laser ranging system is disclosed which provides a waveguide housing which includes a first and second gas laser. The first laser is a low pressure laser while the second laser is a high pressure laser. These two lasers formed in the waveguide housing have their longitudinal axis in optical alignment. In the preferred embodiment, the second high pressure gas laser is a transversely excited atmospheric (TEA) laser. The first low pressure gas laser produces two outputs, one of the outputs is a low level local oscillator signal while the second output is transmitted as an input to the high pressure laser. The second high pressure laser builds up from the injected signal from the low pressure laser which results in a high pressure laser pulse output that has the frequency stability of the low pressure laser while maintaining the high peak power output available from a transversely pumped waveguide laser.