Abstract: Data is digitally sampled at intervals, and these samples are stored for a fixed period. During this period the samples are also processed to select certain characteristics, such as maximum, minimum, average, etc., and these abstract indicators are stored and updated. Then, at some longer interval, the abstract is stored in another data block, and this data block of abstracts is also continuously monitored to select the maximum, minimum, etc., to produce a higher abstracted sample. The process of storage of samples and continuous selection can be repeated for even higher abstraction. Thus, the important characteristics are preserved, but the quantity of data to be stored is greatly reduced.

Abstract: A data processing system includes a plurality of synchronous random access memory devices, a data processor, and a time skewing circuit interposed between the data processor and the plurality of synchronous memory devices. The time skewing circuit imparts different increments of delay time into memory clock and address signals transmitted to different ones of the synchronous memory devices, imparts different increments of delay time into various control signals, and imparts a uniform increment of delay time into several write enable signals. The read enable signals and the write enable signals are used for loading data into data storage devices, which are a part of the time skewing circuit that is interposed between the data processor and the synchronous memory devices.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A data processing system includes a plurality of synchronous random access memory devices, a data processor, and a time skewing circuit interposed between the data processor and the plurality of synchronous memory devices. The time skewing circuit imparts different increments of delay time into memory clock and address signals transmitted to different ones of the synchronous memory devices, imparts different increments of delay time into various control signals, and imparts a uniform increment of delay time into several write enable signals. The read enable signals and the write enable signals are used for loading data into data storage devices, which are a part of the time skewing circuit that is interposed between the data processor and the synchronous memory devices.

Abstract: A data processing system includes a plurality of synchronous random access memory devices, a data processor, and a time skewing circuit interposed between the data processor and the plurality of synchronous memory devices. The time skewing circuit imparts different increments of delay time into memory clock and address signals transmitted to different ones of the synchronous memory devices, imparts different increments of delay time into various control signals, and imparts a uniform increment of delay time into several write enable signals. The read enable signals and the write enable signals are used for loading data into data storage devices, which are a part of the time skewing circuit that is interposed between the data processor and the synchronous memory devices.

Abstract: A circuit for selecting a block spare in a semiconductor device is designed with a programmable circuit (14), storing an internal address and producing an address match signal AM and a block select signal BS in response to first (A) and second (B) address signals and the internal address. A global spare circuit (28) produces a global spare select signal (GSS), in response to the address match signal. A block spare circuit (34) produces a block spare select signal (BSS), in response to the global spare select signal and the block select signal.

Abstract: A method for fabricating and for blowing top lead fuses (41 and 42) includes the steps of: (a) forming a conductive top lead fuse (41) on a layer of insulator (45); (b) depositing a layer of top insulator (47) over the top lead fuse at a top to sidewall thickness ratio of approximately 2:1; (c) anisotropically etching the top insulator back universally to a top to sidewall thickness ratio of approximately 1:2. The resulting top lead fuses (30 and 31) are selectively blown explosively out (24) of the top surface of the top insulator.

Abstract: A process is disclosed herein for increasing yield in a semiconductor circuity having redundant circuitry for replacing defective normal circuitry in the semiconductor integrated circuit. In the first step, an insufficient sinter operation (50) is carried out in a hydrogen atmosphere at a temperature of less than 350.degree. C. At this temperature, no significant change will be seen in the interface trap density. Thereafter, the integrated circuit is tested (54,56) and the defective normal circuitry then is replaced (58) with the redundant circuitry. The integrated circuit is then subjected to a sufficient sinter operation (64) which is an operation wherein the substrate is disposed at a temperature between 350.degree. C.-500.degree. C. for more than 30 minutes. This sufficient sinter operation is performed in a hydrogen atmosphere, allowing dangling bonds at the interface to be terminated with hydrogen. Preferable, the optimal temperature for the sufficient sinter is approximately 400.degree. C.

Abstract: A semiconductor memory device (20) includes N bitlines (31, 32, 33, 34) addressable by a partially decoded column address, wherein N is greater two. A column address selection lead (YSEL) has plural segments, each of which overlays a length of one of the bitlines. Each segment of the column address selection lead overlays no more than approximately 1/N of the length of a bitline. Adjacent column address selection leads are separated by approximately the pitch of N-1 bitlines.

Abstract: An oscillator circuit (150) is designed with a reference circuit (102), responsive to a first voltage, for producing a second voltage. An oscillator (108), responsive to the second voltage, produces a first output signal having a magnitude less than a magnitude of the first voltage. A level translator (114), responsive to the first output signal, produces a second output signal having a magnitude greater than the magnitude of the first output signal. Since the oscillator produces the first output signal with a magnitude less than the magnitude of the first voltage, power consumption is reduced with respect to an oscillator operating at the first voltage. The magnitude of the first output signal is increased by the level translator to a desired magnitude of the second output signal.

Abstract: A dual-port memory includes an array of dynamic storage cells and a serial register having a plurality of static stages. Each stage of the serial register is arranged for receiving a data bit from a selected storage cell of the array. A plurality of bitlines is interposed between the storage cells of the array and the stages of the serial register. At one time only a single selectable bitline is arranged for interconnecting each of the columns of storage cells with each of the stages of the serial register. Each stage of the serial register includes a latch disabling circuit for selectively enabling and disabling coupling from an output of one amplifier to an input of another amplifier. By disabling such coupling, new data easily can be written into the serial register stage. A keeper circuit in each stage of the serial register reduces power consumption.

Abstract: A circuit for replacing an array element with a redundant element in a semiconductor device is designed with a programmable circuit (128) storing an internal address and coupled to receive a buffered address (120 and 122). The programmable circuit (128) produces first (130) and second (132) redundant addresses in response to the internal and buffered addresses (120 and 122). A first decoder circuit (140), produces a signal to enable the redundant element (142) in response to the first redundant address (130). A second decoder circuit (148) produces a signal to enable the array element (150) in response to the second redundant address (132).

Abstract: A circuit is designed for regulating a power supply voltage. A regulator circuit (26) compares a power supply sample voltage VAR.sub.1 (34) and a reference voltage VREF (20) and corrects the power supply voltage VAR.sub.0 (30). The regulator circuit rate for correcting the power supply voltage varies with the regulator circuit power consumption. A circuit (160), responsive to a control signal (164), changes the regulator circuit power consumption.

Abstract: An input circuit designed for a semiconductor device. A first input buffer (14) receives a control signal EN, an input signal IN, and a reference signal VREF, for producing a first output signal OUT.sub.1 in response the control signal and a difference between the input signal and the reference signal. A second input buffer (16) receives the control signal and the input signal, for producing a second output signal OUT.sub.2 in response to the control signal and the input signal. A control circuit (22) produces the control signal, in response to a predetermined output state.

Abstract: In a video-type computer system and the like, an improved memory circuit is provided for adapting the system to CRT screens having different resolutions. The memory circuit includes a bit-mapped RAM unit or chip having sufficient cells to accommodate any CRT screen sought to be used, and also a serial shift register having taps at a plurality of different locations corresponding to different columns of cells in the RAM unit. When the RAM unit is in serial mode, a row of data is transferred into the serial shift register. Then the column address applied to the RAM unit is used to instruct and actuate a suitable decoder circuit to select the tap appropriate to unload the portion of the serial shift register containing the data bits of interest.

Abstract: An N-channel MOS random access memory of the one transistor type is disclosed. The cell utilizes an ion implanted area beneath the capacitor dielectric to permit lower bias voltages on the capacitor. In one example, two levels of polycrystalline silicon are used, one for the bias voltage side of the storage capacitor, and the other for the gate of the MOS transistor and to connect the gate to the bit select line. The capacitor dielectric may be formed of thermal SiO.sub.2 which is about half as thick as the gate insulator of the MOS transistor in the cell. In another example, a single-level poly cell uses an implanted region for the same purpose; the capacitor dielectric is the same thickness as the MOS gate insulator so the lower bias voltage functions to reduce stress failures of the dielectric.

Abstract: A device tester provides signals to a device under test. A parallel compare circuit then receives all the outputs of the device and compares each of the outputs with one another simultaneously. Next the parallel compare circuit will produce an output pattern which is compared to the expected test pattern stored in the tester. If the output pattern from the parallel compare circuit is the same as the expected test pattern the device will be considered a properly working device; conversely, if the patterns do not match the device will be considered an improperly working device.

Abstract: An amplifier is arranged with an actively clamped load. In a differential amplifier, a pair of emitter-coupled transistors has loads connected between the collectors and a voltage supply. Separate clamping transistors have their collector-emitter paths connected across respective ones of the loads. A clamping control circuit, responsive to an input signal, produces a variable control signal to clamp output signal swings across the loads. A similar clamping control circuit can be used with a single-ended amplifier. Such an amplifier having an actively clamped load is useful in sense amplifier circuit arrangements in semiconductor memory arrangements used in data processing systems.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.