Abstract: A method of continuously replenishing a four-transistor static RAM storage cell is described. Such method comprises biasing both the back gate terminals and the normal gate terminals of the two bit line coupling transistors in the static RAM storage cell to voltage levels for causing a flow of small compensating currents through such coupling transistors when they are in a standby or non-access condition. Such small compensating currents are supplied to the two storage transistors in the storage cell for replenishing leakage of charge from the parasitic capacitance in the storage cell. The bias voltages arc supplied by adaptive bias circuits which adjust the bias voltages to track changes in the leakage of charge from the parasitic cell capacitance.

Abstract: A forms feed tractor belt includes drive members molded around a thin, flexible band at longitudinal intervals. To make the belt, slots are first punched at longitudinal intervals in at least one side of the flexible band. Drive members are then molded around the band at the slots except for at least one drive memberless interval at each end of the band. The ends of the band are overlapped so that the slots of the drive memberless intervals coincide. Final drive members are then molded around the slots of each pair of coincided drive memberless intervals to complete the endless tractor belt.