Abstract: A bus signal detector for a signal transmitted via a bus (12) has an edge detector (14) which supplies a signal (S.sub.F1) indicating the occurrence of a signal edge (F1) when the voltage on the bus (12) suddenly changes by at least a predetermined relative threshold (.DELTA.U.sub.s) in relation to a reference voltage (V.sub.ref) continuously adapted to the quiescent voltage of the bus (.sub.12). An evaluating circuit following the edge detector (14) uses the signal (S.sub.F1) supplied by the edge detector (14) to produce an output signal indicating a bus signal.

Abstract: This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization.

Abstract: Molybdenum-gate transistors with self-aligned, silicided source/drain regions are made by a process that avoids unwanted etching of the molybdenum of the gate when the unreacted metal used for siliciding is removed. The molybdenum gate is protected by encapsulating with a cap oxide and sidewall oxide; this encapsulation is applied in a manner to seal the interfaces between the two oxides. The oxides may be dual layer--first plasma deposited then phosphorus doped CVD oxide. A dilute sulphuric acid etch may be used to remove unreacted titanium employed for the siliciding.