Abstract: A system and method for detecting the presence of a particular source of audible content using an automatic speech recognizer component which is trained to recognize specific non-speech sounds. Training of the automatic speech recognizer component is accomplished by providing an appropriate model to be recognized and by tuning the automatic speech recognizer to the sounds created by the desired stimulus. The automatic speech recognizer can additionally be provided with processing means for distinguishing the desired stimulus from an irrelevant or unwanted stimulus which may have acoustic signatures with a high degree of similarity to that of the desired stimulus. The invention can be implemented in a portable detector to allow detection of a specific acoustic source at any location.

Abstract: A cache memory architecture having a separate redundant read bus fully dedicated to redundancy and fed by a single spare sub-array common to all memory sub-arrays of the cache memory. Redundant sense amplifiers are dotted to the redundant read bus, and normal sense amplifiers are connected to a main read bus. Normal and redundant data are valid and available at the same time at the outputs of the normal and redundant sense amplifiers. When the late select address signals become valid, then the correct information can be selected via a multiplexer provided with an INHIBIT input. The multiplexer is normally controlled by decoded signals generated by a decoder, unless redundancy is required. If redundancy is required, the information generated by the bit address comparator forces the multiplexer, via the INHIBIT input, to select the redundant read bus, instead of one read bus of the main read bus, and to output the redundant byte as the selected one.

Abstract: Conductors are fabricated by forming a layer of doped polysilicon on a semiconductor substrate, forming a nitrogen-enriched conductive layer on the layer of doped polysilicon, wherein nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof, and patterning the nitrogen-enriched conductive layer and layer of doped polysilicon so as to form the conductors.

Abstract: A pick correlation method, comprises the steps of displaying a pick marker on a display screen; directing the pick marker at an image on the display screen, the image comprising at least one line primitive, and the pick marker having a pick window corresponding thereto; subjecting the at least one line primitive to a trivial test, whereby the at least one line primitive can be trivially tested by the trivial test if the at least one line primitive has both of its end-points outside of the same extended edge of the rectangular shaped pick window and, if successfully tested by the trivial test, accepting or rejecting the at least one line primitive in accordance with the results of the trivial test; and if the at least one line primitive cannot be trivially tested, subjecting the at least one line primitive to a non-trivial test which does not require performing floating point operations, and accepting or rejecting the at least one line primitive in accordance with the results of the non-trivial test.

Abstract: An apparatus for mounting to a tool having a surface to be cleaned for producing aerosol from a substance for cleaning the surface, includes a flange for mounting to the tool having the surface to be cleaned. A nozzle is mounted to the flange for receiving the substance. The nozzle has at least one exit opening which allows passing of the substance therethrough for expanding the substance from a first pressure to a second pressure which is lower than the first pressure for solidifying at least a substantial portion of the substance and producing aerosol for cleaning the surface. Condensation preventing means is provided for preventing condensation from forming on surfaces of the apparatus and the surface to be cleaned, and contamination preventing means is provided for preventing contaminants from re-contaminating the surface subsequent to removal therefrom.

Abstract: A method of pick correlation comprises the steps of displaying a pick marker on a display screen; directing the pick marker at an image on the display screen, the image comprising at least one line primitive, and the pick marker having a diamond shaped pick window corresponding thereto; subjecting the line primitive to a trivial test, the trivial test comprising enclosing the diamond shaped pick window in a least enclosing rectangle, wherein the diamond shaped pick window and the rectangle have a common center point, and rejecting the line primitive if the line primitive has both of its end-points outside of the same extended edge of the rectangle; if the line primitive cannot be trivially tested, subjecting the line primitive to a non-trivial test which does not require performing floating point operations, and accepting or rejecting the line primitive in accordance with the results of the non-trivial test; and considering accepted line primitives as being selected for further processing.

Abstract: Generating delay targets for creating a multilevel hierarchical circuit design by providing a hierarchical design description and delay constraints of the circuit design; generating a net measure for each net and macro cell of the circuit design, and generating an abstract delay model for each macro cell of the circuit design based on the design description, wherein net measure is the estimated resistive-capacitive delay of a net derived from the estimated length of the net based on area-driven design, and an abstract delay model is a description of delays through a macro cell; generating delay targets for the nets and macro cells based on the net measures, the abstract delay models and the delay constraints; and creating the circuit design based on the delay targets.

Abstract: A conductor is fabricated by forming a layer of doped polysilicon on a semiconductor substrate, patterning the layer of doped polysilicon so as to form a conductor, forming a nitrogen-enriched metal film on the conductor, and converting the nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in the nitrogen-enriched metal silicide film provides for improved thermal stability thereof.

Abstract: A network-under-test of a device is tested relative to other networks of the device by probing the network-under-test with a probe; generating a voltage which is applied across the network-under-test via the probe for developing a transient voltage between the network-under-test and the other networks of the device for stressing leakage resistance between the network-under-test and the other networks; and determining if the stressed leakage resistance is acceptable for determining integrity of the network-under-test relative to the other networks of the device.

Abstract: A contact for a semiconductor device is provided by depositing a layer of palladium on a silicon substrate, causing the palladium to react with the substrate for forming palladium silicide, removing unreacted palladium from the substrate, forming doped silicon on the palladium silicide and substrate, causing the silicon to be transported through the palladium silicide for recrystallizing on the substrate for forming epitaxially recrystallized silicon regions on the substrate and lifting the palladium silicide above the epitaxially recrystallized silicon regions for forming a silicided contact therefor, and removing the doped silicon from the substrate.

Abstract: A heat exchanger includes a housing, a reservoir comprising a solid material mounted within the housing, temperature control means for controlling the temperature of the reservoir, and energy exchange means for allowing thermal contact between the reservoir and a substance for effectuating transfer of energy from the reservoir to the substance for regulating the temperature of the substance.

Abstract: Polishing of a non-planar surface layer on a semiconductor substrate is conducted by providing an oxidized boron nitride polish stop layer on the semiconductor substrate, forming the non-planar surface layer on the oxidized boron nitride polish stop layer, the oxidized boron nitride polish stop layer being polish selective relative to the non-planar surface layer, and polishing the non-planar surface layer until the oxidized boron nitride polish stop layer is reached.

Abstract: An apparatus for producing aerosol from a substance includes a heat exchanger for receiving and cooling a substance. The heat exchanger includes a housing; a cryogenic reservoir comprising a solid material mounted within the housing; temperature control means for controllably cooling the reservoir; and energy exchange means for allowing thermal contact between the reservoir and the substance for effectuating transfer of cooling energy from the cryogenic reservoir to the substance for controllably cooling the substance. A delivery line has an inlet for receiving the substance from the heat exchanger at a first pressure. A nozzle is connected to the delivery line for receiving the substance from the delivery line. The nozzle has at least one exit opening which allows passing of the substance therethrough for expanding the substance from the first pressure to a second pressure which is lower than the first pressure for solidifying the substance and producing aerosol.

Abstract: A method of fabricating a semiconductor structure includes the steps of providing a semiconductor substrate having a material disposed thereon, masking the material with a mask having an appropriate pattern for forming a semiconductor structure, etching unmasked portions of the material so as to form the semiconductor structure, wherein the etching produces a film which attaches onto the semiconductor structure and/or on the semiconductor substrate, and removing the film from the semiconductor structure according to the steps of producing a cryogenic jet stream having cryogenic particles therein, and directing the cryogenic jet stream at the film such that the crogenic jet stream impinges on and causes the film to decrease in temperature so that a high temperature gradient develops between the film and the semiconductor structure, the film detaching from the semiconductor structure and fracturing due to contraction caused by the decrease in temperature and high temperature gradient.

Abstract: An aerosol cleaning apparatus for cleaning a substrate includes an aerosol producing means having a nozzle head. The nozzle head is positioned at a selected proximity and orientation to the substrate which is held by a rotatable holder. The aerosol spray dislodges particles from the substrate and the rotation of the substrate further assists in the removal of the loosened particles. A method of aerosol cleaning includes rotating a substrate at a preselected speed and spraying an aerosol jet in conjunction with the rotation to help in the removal of particles from the substrate.

Abstract: A MOS device having protection against electrostatic discharge includes a protection diode formed below the MOS device so that excess charge buildup in the MOS device is conducted away from the MOS device by the protection diode.

Abstract: A nozzle apparatus for producing aerosol from a substance includes a delivery line having an inlet for receiving the substance at a first pressure. A nozzle is connected to the delivery line for receiving the substance from the delivery line. The nozzle has at least one exit opening which allows passing of the substance therethrough for expanding the substance from the first pressure to a second pressure which is lower than the first pressure for solidifying the substance and producing aerosol. Condensation preventing means is provided for preventing condensation from forming on the delivery line and/or on the nozzle.

Abstract: A system for providing test data for testing a semiconductor memory includes generation means for successively developing generated data patterns beginning from a seed data pattern, such that every distinct data pattern of the seed data pattern is successively developed in a forward sequence and, subsequently, the distinct data patterns are successively developed in a reverse sequence relative to the forward sequence.

Abstract: A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

Abstract: A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer for forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.