Abstract: A metal-insulator-semiconductor type integrated circuit includes a semiconductor substrate of a first conductivity type and a power supply for a back-gate bias. The substrate is connected to the power supply by a switching means. A region of a second conductivity type, which is grounded, is formed on a major surface of the substrate. The potential of the semiconductor substrate is clamped at a predetermined level by a clamping means connected between the above-mentioned region and the substrate.
Abstract: A light source having an infrared-emitting diode and a luminescent material excitable in a step-like manner for converting the infrared radiation to visible rays comprises an optical cavity enclosing the luminescent material. A portion of the cavity wall is a dichroic filter that is substantially transparent to the visible rays but reflects the infrared radiation. The other cavity wall reflect the infrared radiation in particular.