Abstract: A training bolt for use in an automatic or semi-automatic firearm includes a training bolt installable in a bolt receiver of a firearm, wherein the training bolt is constructed and arranged with cutouts and protrusions which cooperate with the internal structure of the firearm bolt receiver and which allow function of the hammer/trigger/safety mechanism of the firearm, wherein the training bolt is configured to prevent, absolutely, chambering or firing a live round.

Abstract: A model railroad coupler for use with model railroad rolling stock includes a coupler head and a coupler knuckle carried pivotally on the coupler head; an elongate coupler shank having one end thereof fixed to the coupler head; a coupler mounting structure carried at the other end of the coupler shank, the shank having a shank longitudinal axis; wherein the coupler head includes a coupler head side flange thereon for preventing over rotation of the coupler knuckle, the coupler head side flange having a flat, inner-facing surface which is parallel to the shank axis; and wherein the coupler mounting structure includes a coupler centering surface adjacent an end thereof, wherein the coupler centering surface has a first, co-linear portion and a second, angled portion wherein a first fulcrum point is located between the first, co-linear portion and the second, angled portion and a second fulcrum point located at an outer margin of the coupler centering surface.

Abstract: A method of beacon rebroadcast for use in a packet-based, centrally-controlled, wireless network includes embedding auxiliary network information in a header portion of a packet transmitted over the network by a central controller; receiving a packet having auxiliary network information therein by a device in the network; rebroadcast, by the device in the network, of the packet having auxiliary network information therein in a predetermined time slot, wherein the predetermined time slot is predetermined by the central controller; and receiving, by a device not already on the network, of the auxiliary network information bearing packet, thereby allowing the device not already on the network to join the network.

Abstract: A collapsible mixing wand includes an elongate shaft having a longitudinal axis therealong, a free end and a mixer attachment end; a mixer assembly attached to the elongate shaft at the mixer attachment end thereof by a fixing mechanism, for rotation relative to the longitudinal axis; wherein, when the elongate shaft is rotated in a first direction, the mixer assembly rotates to an extended condition; and when the elongate shaft rotates in a second direction, the mixer assembly rotates to a substantially collapsed condition.

Abstract: A truck for use on a piece of model railroad rolling stock, the truck having axle/wheels sets associated therewith includes two identical truck portions, which, when joined, form a model railroad truck frame, which is held together by mechanical impedance by a frame retainer located in a central mounting structure formed by joining the two truck portions.

Abstract: A brake monitoring system for use on a motor vehicle includes a sensor connected to each brake actuator shaft on the motor vehicle for monitoring the position and travel of the brake actuator shaft and for generating and transmitting a brake condition signal; a data processor carried in an axle box associated with each axle and connected to sensors associated with brakes for the axle for receiving, interpreting, storing, and upon request, transmitting the brake condition signal, wherein each data processor includes an auto-address mechanism to identify its position on the vehicle; and a master station, wherein said master station includes a display for identifying a particular vehicle brake, a quantitative indication of the travel on the brake actuator shaft associated with the particular brake, and wherein said visual indicating devices include plural indicia which are indicative of said safety condition of a particular brake.

Abstract: A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.

Abstract: A method of synchronizing clocks in the stations of ad hoc and infrastructure networks includes providing a time stamp field in a header; reading the header by all stations in a network; extracting the time stamp information from the header by each station in the network as time information; sending extracted time information to a station clock; and adjusting the station clock as a function of the extracted time information. A system for synchronizing clocks in the stations of ad hoc and infrastructure networks includes a DLL having a comparator for receiving the time stamp information and a low-pass filter having a long time-constant for adjusting the station clock in a gradual manner; a time stamp field in a header; and time information extracted from the time stamp information of the header by each station in the network.

Abstract: A cross-point RRAM memory array includes a word line array having an array of substantially parallel word lines therein and a bit line array having an array of substantially parallel bit lines therein, wherein said bit lines are substantially perpendicular to said word lines, and wherein a cross-point is formed between said word lines and said bit lines. A memory resistor located between said word lines and said bit lines at each cross-point. A high-open-circuit-voltage gain, bit line sensing differential amplifier circuit located on each bit line, including a feedback resistor and a high-open-circuit-voltage gain amplifier, arranged in parallel, wherein a resistance of the feedback resistors is greater than a resistance of any of the memory resistors programmed at a low resistance state.

Abstract: A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium content of the SiGe layer is greater than 20%, by atomic ratio; implanting H+ ions into the SiGe layer at a dose of between about 1·1016 cm?2 to 5·1016 cm?2, at an energy of between about 20 keV to 45 keV; patterning the SiGe layer with photoresist; plasma etching the structure to form trenches about regions; removing the photoresist; and thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes.

Abstract: A method of optical bi-direction communication between mobile communication devices, wherein each mobile communication device has data storage locations, and wherein the mobile communication device includes an optical data capture mechanism, includes rendering, in one mobile communication device, data in a computer readable form; determining if the rendered data can be stored in a single data file; converting the rendered data to a graphic representation; and reading and storing the graphic representation with the optical capture mechanism of another mobile communication device.

Abstract: A method of fabricating a CMR layer in a CMOS device using CMP to pattern the CMR layer includes preparing a silicon substrate, including fabrication of a bottom electrode in the silicon substrate; depositing a layer of SiNx on the substrate; patterning and etching the SiNx layer to form a damascene trench over the bottom electrode; depositing a layer CMR material over the SiNx and in the damascene trench; removing the CMR material overlying the SiNx layer by CMP, leaving the CMR material in the damascene trench; and completing the CMOS structure.

Abstract: An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may also be alternated to form WN/W alternating layer films, as tungsten is deposited during periods where the nitrogen source is removed.

Abstract: A method of color conversion includes providing a first color domain input signal set having plural input signals; sorting the input signals of the first color domain input signal set according to signal intensity; designing and generating plural 1-D look-up table sets for color polyhedrons; selecting a set of look-up tables for use with a specific color polyhedron, wherein said selecting is a function of a section of the polyhedron determined as a function of the input signal set; looking up values in the look-up table set as a function of the input signal set; generating weights as a function of the sorted signal intensities; and interpolating the output from the selected look-up tables as a function of the selected look-up table and the generated weights to produce a color domain signal set which is converted to a desired color domain signal set.

Abstract: A method of microlens fabrication for use in a photosensor includes preparing a photodetector element array which is sensitive to light in a specific color domain and depositing microlens material on the photodetector element array. The structure is coated with photoresist, and the photoresist is masked and exposed in a separate exposure for each color in the color domain. The photoresist is developed and the microlens material etched to form a microlens array.

Abstract: A method of securing the channel by a QoS manager in an ad hoc network having a contention protocol including a normal priority resolution period having multiple priority resolution slots therein, wherein the contention protocol includes plural contention state slots, and wherein plural devices contend for transmission time on the network by transmitting priority resolution symbols during a priority resolution period, including defining a QoS manager constructed and arranged to compete with the plural devices on the network; and providing an extended priority resolution slot for transmission of a priority resolution symbol at the end of the normal priority resolution period.

Abstract: A method of synchronizing a multimedia content stream for output to a plurality of wired and wireless output device in a network having plural realms, wherein each realm includes a CTL, includes buffering the multimedia content stream in a first realm; determining a buffer delay; transmitting the buffer delay to all CTLs in all realms of the network; and transmitting the multimedia content stream to all realms in the network.

Abstract: A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon layer; depositing a dielectric layer on the wafer to cover a gate module of the IC device; smoothing the dielectric; implanting ions to form a defect layer; cutting the wafer into individual silicon dies; preparing a glass panel and the silicon dies for bonding; bonding the silicon dies onto the glass panel to form a bonded structure; annealing the bonded structure; splitting the bonded structure along the defect layer; removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and completing the glass panel circuitry.

Abstract: A one-mask etching method for use with a PCMO-containing RRAM to reduce stack side-wall residuals, includes preparing a substrate, taken from the group of substrates consisting of silicon, silicon dioxide and polysilicon; depositing a bottom electrode on the substrate; depositing a PCMO layer on the bottom electrode; depositing a top electrode on the PCMO layer; depositing a hard mask on the top electrode; depositing and patterning a photoresist layer on the hard mask; etching the hard mask; etching the top electrode using a first etching process having an etching atmosphere consisting of Ar, O2, and Cl2; etching the PCMO layer using an etching process taken from the group of etching processes consisting of the first etching process and a second etching process having an etching atmosphere consisting of Ar and O2. etching the bottom electrode using the first etching process; and completing the RRAM device.

Abstract: A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.