Abstract: A data processing system includes a system interconnect, a first interconnect master coupled to the system interconnect, a second interconnect master coupled to the system interconnect, and a cache coherency manager coupled to the first and second interconnect masters. The first interconnect master includes a cache. The cache coherency manager provides debug cache coherency operations and non-debug cache coherency operations to the first interconnect master. The cache coherency manager generates the debug cache coherency operations in response to debug cache coherency commands from a debugger and generates the non-debug cache coherency operations in response to transactions performed by the second interconnect master on the system interconnect.

Abstract: An eFuse (electronic fuse) circuit has a first detector for determining whether an ESD (electrostatic discharge) event occurs at a circuit pad of an integrated circuit and provides an ESD trigger signal in response thereto. A second detector detects a presence of a first power supply voltage and provides a power on signal indicating the presence of the first power supply voltage. A fuse is permitted to be programmable when no detection of the ESD event occurs and at the same time a presence of the power on signal is detected. The fuse is not permitted to be programmed when an ESD event is detected or when there is an absence of the power on signal. An array of fuses is thereby protected from inadvertent programming from an ESD event or powering up an integrated circuit.

Abstract: A branch target buffer (BTB) receives, from a processor, a current fetch group address which corresponds to a current fetch group including a plurality of instructions. In response to the current fetch group address resulting in a group hit in the BTB, the BTB provides to the processor a branch target address corresponding to a branch instruction within the current fetch group which is indicated by a control field as valid and predicted taken. The BTB generates the branch target address using an unshared lower order target portion, corresponding to the branch instruction and located within the entry of the BTB which caused the group hit, and one of a shared higher order target portion located within the entry of the BTB which caused the group hit or a higher order portion of the current fetch group address based on a value of the control field.

Abstract: A method and circuit includes providing at least one conductor for receiving an input signal. A termination circuit and a clamp circuit are coupled to the at least one conductor. The termination circuit is enabled while the clamp circuit remains enabled. The clamp circuit is disabled. After disabling the clamp circuit, while the termination circuit remains enabled, both a first differential comparator and a second differential comparator are enabled. The first differential comparator receives a first differential input signal at a first input and a second differential input signal at a second input. The second differential comparator detects when a difference between the first differential input signal and the second differential input signal is greater than a predetermined value and enables transfer of an output of the first differential comparator to a memory controller.

Abstract: An amplifier has an input stage coupled to a current mirror for providing a first control signal. A gain boosting stage has first and second sections, each having first and second inputs and an output. The first input of the first section is coupled to the input stage. The second input of the first section is a first node between a source and a drain of a first pair of series-coupled transistors. The first input of the second section is coupled to the current mirror. The second input of the second section is a second node between a source and a drain of a second pair of series-coupled transistors. A pre-driver stage has inputs coupled to the input stage and the gain boosting stage. The pre-driver stage provides inputs to the gain boosting stage and receives outputs from the gain boosting stage prior to coupling to an output stage.

Abstract: A data processing system includes functional circuitry which performs at least one data processing function, a register file coupled to the functional circuitry and having a plurality of general purpose registers (GPRs) which are included as part of a user's programming model for the data processing system, where a portion of the plurality of GPRs are reconfigurable as test registers during a test mode, and control circuitry which provides a test enable indicator to the register file. The portion of the plurality of GPRs, in response to the test enable indicator indicating the test mode is enabled, operates to accumulate test data from predetermined circuit nodes within the functional circuitry. In one aspect, the portion of the plurality of GPRs are reconfigured as multiple input shift registers (MISRs) during the test mode and generate signatures based on the test data.

Abstract: A method forms a micropad to an external contact of a first semiconductor device. A stud of copper is formed over the external contact. The stud extends above a surface of the first semiconductor device. The stud of copper is immersed in a solution of tin. The tin replaces at least 95 percent of the copper of the stud and preferably more than 99 percent. The result is a tin micropad that has less than 5 percent copper by weight. Since the micropad is substantially pure tin, intermetallic bonds will not form during the time while the micropads of the first semiconductor device are not bonded. Smaller micropad dimensions result since intermetallic bonds do not form. When the first semiconductor device is bonded to an overlying second semiconductor device, the bond dimensions do not significantly increase the height of stacked chips.

Abstract: A driver circuit includes a first and a second voltage rail, a first pre-driver circuit, a power transistor, comparison circuitry which indicates when a voltage level of the first voltage rails is above or below a reference voltage level, a level shift circuit coupled between the first voltage rail and the second voltage rail which provides a level shifted output, a tapered buffer circuit coupled to the first voltage rail and to a first circuit node, wherein the tapered buffer circuit receives the level shifted output and provides a buffered output to a control electrode of the first pre-driver transistor, and a rail voltage adjusting circuit coupled between the first circuit node and the second voltage rail, which, in response to the comparison circuitry indicating that the voltage level of the first voltage rail is above the reference voltage level, adjusts a voltage level of the second voltage rail.

Abstract: A memory has an array of memory cells, a word line driver, a sense amplifier, and a sense enable circuit. Each memory cell has a coupling transistor for coupling a storage portion to a bit line. The coupling transistors have an average threshold voltage and a maximum threshold voltage. The word line driver is coupled to the array and is for enabling a selected row of memory cells in the array. The sense amplifier detects a state of a memory cell in the selected row in response to a sense enable signal. The sense enable circuit provides the sense enable signal at a time based on the maximum threshold voltage. This timing enables the sense amplifier sufficiently late for low temperature operation while providing for faster operation at high temperature than would normally be achieved using just the average threshold voltage in providing timing of the sense enable signal.

Abstract: A data processing system uses a data processor instruction that forms an immediate value. The data processing instruction uses a first field as a portion of the immediate value. A second field of the data processing instruction determines a positional location of the portion of the immediate value within the immediate value. A bit value in a third field of the data processing instruction is used to determine a remainder of the immediate value.

Abstract: A semiconductor device is formed using a semiconductor substrate. A gate dielectric is formed over the semiconductor substrate. A gate electrode layer is formed over the gate dielectric. A patterned masking layer is formed over the gate electrode layer. A first region of the gate electrode layer lies within an opening in the patterned masking layer. The first region of the gate electrode layer is partially etched to leave an elevated portion of the gate electrode layer and a lower portion adjacent to the elevated portion. A sidewall spacer is formed adjacent to the elevated portion and over the lower portion. An implant is performed into the semiconductor substrate using the elevated portion and the sidewall spacer as a mask. The sidewall spacer and the lower portion are removed.

Abstract: A circuit and method reduces disturb in a memory array resulting from one of two supply voltages dropping below a predetermined value. Memory control logic is operated using a logic power domain. Higher voltages than that of the logic power domain are generated in response to an oscillator oscillating. The higher voltages are used to operate the memory array. Operation of the oscillator is controlled with the memory control logic when the logic power domain is at least at a first level or value. The oscillator is disabled when the logic power domain is below the first level. The disabling of the oscillator has the effect of preventing generation of the higher voltages. This facilitates preventing the higher voltages from reaching the memory array when they may not be properly controlled.

Abstract: An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.

Abstract: A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.

Abstract: A method for forming a semiconductor isolation trench includes forming a pad oxide layer over a substrate and forming a barrier layer over the substrate. A masking layer is formed over the barrier layer and is patterned to form at least one opening in the masking layer. At least a part of the barrier layer and at least a part of the pad oxide layer are etched through the at least one opening resulting in a trench pad oxide layer. Etching of the trench pad oxide layer stops substantially at a top surface of the substrate within the isolation trench. An oxide layer is grown by diffusion on at least the top surface of the substrate corresponding to the at least one isolation trench. The method further includes etching the oxide layer and at least a portion of the substrate to form at least one isolation trench opening.

Abstract: A method for operating a processor in data processing system comprises: asserting a debug control signal to cause the processor to enter a debug operating mode; initializing a plurality of shared processor resources with debug configuration information, wherein the plurality of shared processor resources are shared between a normal operating mode and the debug operating mode; executing instructions with the processor while in the debug operating mode; re-initializing the processor in response to a reset event; and preventing the reset event from re-initializing a predetermined portion of the debug configuration information in the plurality of shared processor resources. This allows processor debugging through reset events without losing the debug information.

Abstract: A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Abstract: A method for making a one time programmable (OTP) memory array includes providing a wafer comprising a buried insulator layer and a semiconductor layer over the buried insulator layer and forming a plurality of bit lines in the semiconductor layer. Each of the plurality of bit lines comprise a portion of the semiconductor layer and the plurality of bit lines are separated from each other by isolation regions formed in the semiconductor layer. The method further includes forming an anti-fuse dielectric layer over and in physical contact with the plurality of bit lines and the isolation regions, and forming a plurality of word lines over and in physical contact with the anti-fuse dielectric layer.

Abstract: In an integrated circuit having a plurality of modules and/or submodules that each performs a substantially same function, defective modules and/or submodules are determined by creating a test signature from an input test pattern. The output of each module and/or submodule is compared with the test signature and defective modules to identify defective modules and/or submodules. The identity of defective modules/submodules is stored on the integrated circuit for subsequent use by a customer. Integrated circuits having one or more defective modules/submodules are sold to customers with full disclosure of which modules/submodules are defective, thereby improving the yield associated with the product. Pricing of the product is discounted for products with less than full functionality.

Abstract: A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.