Abstract: An illuminated display assembly includes a flexible, translucent and rectangular display plate having an outer edge including two opposing side edges and two opposing end edges, and an image depicted on the display plate within the outer edge of the plate. The display plate also has a width dimension measured from the opposing side edges. The display plate is mounted to a support frame having a rectangular panel and a support member extending along a periphery of the panel. The support member includes two opposing side supports and two opposing end supports. A retainer is disposed along each of the side supports and the support frame has a dimension measured from the retainer on the side support that is less than the width of the display plate. Thus, when the retainer receives respective side edges of the display plate, the display plate deforms in a convex shape with respect to the support frame.

Abstract: A method and apparatus for minimizing the surface contamination of semiconductor wafers (11) during the semiconductor device manufacturing process. Semiconductor wafers (11) are stored in a storage cassette (12) with their face sides (17) facing downward and their back sides (16) facing upward. Particulate contamination present on the back sides of the wafers is thereby secured to the wafers by the force of gravity, and the faces of the wafers are shielded from falling debris. An automated wafer handling device (19) is provided with a rotary joint (22) to accomplish the wafer flipping motion before inserting a wafer into a cassette and after removing the wafer from the cassette.

Abstract: A barrier layer for a semiconductor device metallization component provides a silicon nitride film formed in a component recess and a refractory metal film formed over the silicon nitride film. The device component includes a dielectric material and a recess formed in the dielectric. The surface of the dielectric material within the recess is exposed to nitrogen under controlled parameters. A section of the dielectric material adjacent an interior of the recess is converted to silicon nitride. The refractory metal is then conformed deposited along the recess sidewalls. A seed layer is then deposited over the refractory metal film, and a conductive metal is then deposited within the recess. The device is then polished to remove excess metal outside the recess and planarize the device.