Abstract: A device for extracting parameters for decoding a video data flow, contained in headers preceded by a starting code of series of data coded according to an MPEG standard, organized, independently and according to the starting code, and storage of the parameters in three register banks.
Abstract: The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N-type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.
Type:
Grant
Filed:
May 27, 1998
Date of Patent:
May 2, 2000
Assignee:
STMicroelectronics S.A.
Inventors:
Jean Barret, Antoine Pavlin, Pietro Fichera
Abstract: The present invention relates to a protection device for a component including a vertical MOS power transistor and logic components. The protection device includes a first zener diode, a first terminal of which corresponds to the substrate and a second terminal of which corresponds to a region of the second type of conductivity formed in the substrate. It also includes a second zener diode of the same type of conductivity as the first zener diode but of higher avalanche voltage, the second terminals of both zener diodes being connected to a circuit for starting the power transistor via a logic circuit which only becomes conductive when one of its inputs is high and distinct from the other input.
Abstract: The present invention relates to a component protecting against electric overloads likely to occur on a conductor in series with which is placed a detection resistor. The component includes a first cathode-gate thyristor and a second anode-gate thyristor, of the gate current or forward break-over type. The anode region of the first thyristor, formed on the lower surface side, is separate from the isolating wall surrounding the thyristor and the rear surface of the isolating wall is coated with a portion of an insulating layer.