Patents Represented by Attorney Robinson Intellectual Property Law Ofiice, P.C.
  • Patent number: 7928510
    Abstract: It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: April 19, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Ryosuke Watanabe