Abstract: A light source device for an endoscope which sufficiently shields the high-frequency noise produced from a lamp even if there is an opening through which the lamp is exchanged. A lamp hatch for shielding the noise is provided at the opening of the lamp house, and EMI springs for maintaining the electrical conduction state are provided at the portion at which the lamp hatch and the edge portion of the opening overlap each other. When a cooling fan is provided in the lamp house, a plurality of air ports are provided in the lamp hatch which make the air flow of the cooling fan smooth and which have an effect of shielding the noise produced from the lamp. It is favorable to arrange the air ports at an interval of less than 2/.lambda. on the assumption that the wavelength of the noise frequency is .lambda..

Abstract: In a large-aperture lens for low-illuminance imaging, a Gauss type lens configuration is employed, and a negative lens having a predetermined refracting power is inserted in front of the front-side cemented lens, whereby back focus is secured while compactness is attained, without using an aspherical lens. Successively disposed from the object side are a biconvex lens L.sub.1, a positive meniscus lens L.sub.2 having a convex surface directed onto the object side, a negative lens L.sub.3 having a concave surface with a stronger curvature directed onto the image side, a positive meniscus lens L.sub.4 (cemented with lens L.sub.5) having a convex surface directed onto the object side, a negative meniscus lens L.sub.5 having a concave surface directed onto the image side, a biconcave lens L.sub.6 (cemented with lens L.sub.7) having a surface with a stronger curvature directed onto the object side, biconvex lenses L.sub.7 and L.sub.

Abstract: A silicon wafer is held in an airtight chamber by a silicon wafer holder. The silicon wafer holder is cooled by a cooler. High purity nitric acid is stored in a storage container disposed in the airtight container. The storage container is heated by a heater, thereby producing nitric acid gas. The nitric acid gas is condensed on the surface of the silicon wafer so that a thin film is formed. Thus, the surface of the silicon wafer is rendered hydrophilic. Thereafter, high purity hydrofluoric acid is dropped on high purity nitric acid in the storage container by an acid dropper, thereby producing hydrofluoric acid gas. By introducing the hydrofluoric acid gas into the thin film formed on the surface of the silicon wafer, an etching is performed while maintaining the surface of the silicon wafer in a good condition.

Abstract: A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.