Patents Represented by Attorney Rossi & Associates
  • Patent number: 6785507
    Abstract: An image forming apparatus that forms images of originals on sheets, includes a plurality of feeders for feeding sheets, a memory for storing sheet types in association with the plurality of feeders, and storing the order of priority between the sheet types, and a selector for selecting one of the plurality of feeders to be used for a sheet feeding operation in accordance with the sheet types and the order of priority stored in the memory.
    Type: Grant
    Filed: May 17, 2001
    Date of Patent: August 31, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hidehiko Asai, Yasushi Shimizu, Kazuhiro Kasai
  • Patent number: 6782218
    Abstract: There is provided an image forming apparatus an image forming apparatus that is capable of presetting a tabbed sheet feeding section and the number of divisions of recording sheets by tabbed sheets to make the setting operations easier in a tabbed sheet insert mode and a tabbed sheet producing mode during image formation, thus improving the operability. An image forming section forms images on tabbed sheets each having a tab projecting from one edge thereof. A tabbed sheet print mode setting section sets a tabbed sheet print mode in which an image is formed on the tab of each of the tabbed sheets. A control section enables the tabbed sheet print mode setting section to set the tabbed sheet print mode when a sheet feeding section that stores tabbed sheets and the number of tabbed sheets per set are set in advance.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: August 24, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuo Sekiguchi, Rieko Akiba, Tadaaki Saida, Yuichiro Maeda
  • Patent number: 6781432
    Abstract: A control circuit for a MOSFET used in a synchronous rectification circuit applies a gate voltage to the MOSFET during most of a period in which a current flows in a MOSFET. As a result, conduction loss is decreased, making it possible to increase device efficiency and form a device that is compact and lightweight.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: August 24, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Yukihiro Nishikawa
  • Patent number: 6781197
    Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n30 -type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: August 24, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Naoto Fujishima, Akio Sugi, C. Andre T. Salama
  • Patent number: 6778241
    Abstract: A substrate for liquid crystal display elements is provided, which can meet a variety of required optical characteristics and, at the same time, improve the utilization factor of light without the possibility of inducing a signal delay. A predetermined number of pairs of a transparent film having a high refractive index and a transparent film having a low refractive index, each composed of a dielectric material, are stacked on a transparent substrate. The high refractive index transparent film and the low refractive index transparent film have refractive indices of light of not less than 1.8 and not more than 1.5 at a wavelength of 550 nm, respectively. The predetermined number of pairs is 1 or more, and the high refractive index transparent film and the low refractive index transparent film each have a film thickness thereof set to such a value that the light reflectance in a visible light region of each of the transparent films is within a range of 5-95%.
    Type: Grant
    Filed: November 15, 2000
    Date of Patent: August 17, 2004
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Daisuke Arai, Etsuo Ogino
  • Patent number: 6774454
    Abstract: A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor layer, which is isolated in a form of islands on an SOI substrate. A high-concentration impurity diffused region is formed in such a manner as to surround the p-type channel MOSFET and the n-type channel MOSFET. The high-concentration impurity diffused region has a surface concentration of between 1×1018 atom/cm3 and 5×1020 atom/cm3 for achieving a desired gettering effect.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: August 10, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Atsuo Hirabayashi
  • Patent number: 6774755
    Abstract: The present invention relates to a choke coil utilized in a variety of electronic products both for industrial use and consumer use, and aims to provide a choke coil that is thinner in size, accommodates a larger current, provides better efficiency in assembly and higher reliability. The choke coil of the present invention comprises a closing magnetic core having a center magnetic leg, an outer magnetic leg 36 and a common magnetic yoke. A coreless coil winds a plate-type wire around the center magnetic leg of the closing magnetic core to form itself, and is mounted to the closing magnetic core. At least one terminal coupled to an inner turn of the coreless coil out of terminals coupled to both ends of the plate-type wire of the coreless coil is led out from a notch provided on one side of the common magnetic yoke of the closing magnetic core.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: August 10, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshiyuki Nakata, Koji Nakashima, Katsunori Omura, Kiyoshi Takagi
  • Patent number: 6770105
    Abstract: A fuel catalyst for improving combustion efficiency is provided that includes at least one hydride producing element, and at least one element of greater activity on the electrolytic scale than the hydride producing element and at least one element of lesser activity on the electrolytic scale than the hydride producing element. The hydride producing element preferably includes an element from at least one of a Group IV and Group V of the periodic table. The element of greater activity and the element of lesser activity preferably includes at least one of zinc, magnesium, aluminum, palladium, silver, copper and cerium. Preferred formulations of the catalyst element include: a) 20-60% wt antimony, 10-30% wt tin, 10-80% wt zinc and 1-5% wt silver; b) 40% wt antimony, 18 % wt tin, 40% wt zinc and 2% wt silver; c) 20-60% wt antimony, 10-30% wt tin, 20-80 % wt magnesium, 1-8% wt cerium and 0.1-1.0% wt palladium; d) 40% wt antimony, 25 % wt tin, 30% wt magnesium, 4.8% wt cerium and 0.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: August 3, 2004
    Assignee: Advanced Power Systems International, Inc.
    Inventors: Alvin J. Berlin, Ralph H. Wright
  • Patent number: 6770388
    Abstract: A perpendicular magnetic recording medium has a nonmagnetic substrate having concave portions and a soft magnetic layer on the nonmagnetic substrate. The depth of the concave portion and the thickness of the soft magnetic layer are larger than at least the length and the width of the concave portion such that the easy axis of magnetization in the regions of the soft magnetic layer in the concave portions is oriented perpendicular to the soft magnetic layer due to shape magnetic anisotropy. The easy axis of magnetization oriented perpendicular to the soft magnetic layer facilitates signal generation. The recording medium does not use the magnetization of the magnetic recording layer for such signal generation, which can be head positioning signals or other signals, such as copyright data. Instead, it uses the magnetization in the concave regions of the soft magnetic layer for such signal generation.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: August 3, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Hiroyuki Uwazumi, Teruhisa Yokosawa
  • Patent number: 6770237
    Abstract: A method of producing a dust cover assembly comprising the steps of: preparing a fixing member having a mounting bore to be fitted on a shock absorber's piston rod, and an engaging portion formed in its outer circumferential surface as an axially undercut portion; preparing a tubular parison having a large diameter portion at its one axial end portion; positioning the large diameter portion to be disposed radially outwardly of the outer circumferential surface of the fixing member; closing a blow mold to form a mold cavity around the parison and to hold the large diameter portion of the parison in close contact with the outer circumferential surface of the fixing member; and blow molding the parison by introducing a compressed gas into the blow mold through the mounting bore, thereby molding the dust cover. A dust cover assembly and a shock absorber equipped with the dust cover assembly are also disclosed.
    Type: Grant
    Filed: May 12, 2003
    Date of Patent: August 3, 2004
    Assignee: Tokai Rubber Industries, Ltd.
    Inventor: Yorikazu Nakamura
  • Patent number: 6768167
    Abstract: A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a mask to form a second drain region, which also serves as a drift region.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: July 27, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Tatsuji Nagaoka, Tatsuhiko Fujihira, Yasuhiko Onishi
  • Patent number: 6768180
    Abstract: A SJ-LDMOST device offers significantly improved on-state, off-state, and switching characteristics of lateral power devices for power integrated circuits applications. The device is fabricated on an insulator substrate. The proposed structure achieves charge compensation in the drift region by terminating the bottom of the SJ structure by a dielectric hence eliminating the undesirable vertical electric field component and preventing any substrate-assisted-depletion. The device structural arrangement thereby achieve a uniform distribution of the electric field thus maximizing the BV for a given drift region length.
    Type: Grant
    Filed: April 4, 2002
    Date of Patent: July 27, 2004
    Inventors: C. Andre T. Salama, Sameh Khalil Nassif
  • Patent number: 6767061
    Abstract: A seat for vehicle use, the front portion of which is capable of tipping up. The seat includes a seat back, a seat cushion, a tip-up unit which tips up a forward end side of the seat cushion from a base position to an upward tip-up position, and a rock unit which holds the seat cushion at at least one position between the base position and the tip-up position. The seat cushion includes a front seat cushion positioned at a front side of a vehicle and a rear seat cushion positioned at the rear of the front seat cushion. The front seat cushion is provided with the tip-up unit. The rock unit includes a first gear and a second gear both mutually engaged so as to permit tip-up motion of the seat cushion and restrict the tip-down motion of the seat cushion.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: July 27, 2004
    Assignee: Mitsubishi Jidosha Kogyo Kabushiki Kaisha
    Inventors: Takashi Ogino, Shingo Kutomi, Katsuhiko Sasaki
  • Patent number: 6762097
    Abstract: A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the reverse side and at the boundary between the high impurity concentration and a low impurity concentration drift layer, thus achieving both low cost and a high performance. A method for manufacturing a semiconductor device is also provided which can form a high impurity concentration buffer layer and a high impurity concentration layer at the outermost portion of the reverse side without any significant trouble, even after the formation of an active region and an electrode thereof at the right side, to thereby achieve both low cost and high performance.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: July 13, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Manabu Takei, Tatsuhiko Fujihira
  • Patent number: 6759301
    Abstract: A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the reverse side and at the boundary between the high impurity concentration and a low impurity concentration drift layer, thus achieving both low cost and a high performance. A method for manufacturing a semiconductor device is also provided which can form a high impurity concentration buffer layer and a high impurity concentration layer at the outermost portion of the reverse side without any significant trouble, even after the formation of an active region and an electrode thereof at the right side, to thereby achieve both low cost and high performance.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: July 6, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Manabu Takei, Tatsuhiko Fujihira
  • Patent number: 6756636
    Abstract: A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: June 29, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Yasuhiko Onishi, Tatsuhiko Fujihira, Susumu Iwamoto, Takahiro Sato
  • Patent number: 6751948
    Abstract: A direct injection internal combustion engine includes catalysts for purifying exhaust gases, the catalysts being disposed in an exhaust passage of the engine. A control device controls the engine so as to warm up or activate the catalysts. The control device includes a first control part for controlling the engine with an air-fuel ratio of the engine being set at a value in proximity to a stoichiometric air-fuel ratio, an ignition timing being set at a point after a top dead center and a fuel injection timing being set within a compression stroke, and a second control part for controlling the engine with an air-fuel ratio of the engine being set at a value in proximity to a stoichiometric air-fuel ratio, with an ignition timing being set before a top dead center and a fuel injection timing being set within a compression stroke after the first control part controls the engine. The controlling operation performed by the first control part enables stable after-burning and raises the exhaust temperature.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: June 22, 2004
    Assignee: Mitsubishi Jidosha Kogyo Kabushiki Kaisha
    Inventors: Jun Takemura, Kazuyoshi Nakane, Shigeo Yamamoto
  • Patent number: 6747822
    Abstract: Recording of preformat information is accomplished by magnetic transfer to a perpendicular magnetic recording medium with a higher density. The method includes: (1) an initialization step, in which a magnetic field is applied to the magnetic recording medium in the direction perpendicular to the medium surface and direction of magnetization of the whole surface of the magnetic recording medium is aligned to one direction perpendicular to the medium surface, and (2) a magnetic transfer step, in which a magnetic field in the longitudinal direction is applied to both a master disk carrying preformat information and the magnetic recording medium with the master disk in close contact with or in proximity to one or both surfaces of the magnetic recording medium.
    Type: Grant
    Filed: June 22, 2001
    Date of Patent: June 8, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Akira Saito
  • Patent number: 6747823
    Abstract: A method of controlling magnetic recording in a magnetic recording medium and a control device for the same provides a symmetrical transferred signal waveform of equal magnitude with good reproducibility and performs magnetic transfer with high reliability. In performing initial magnetization prior to performing transfer magnetization, an AC magnetic field, the polarity of which changes in the perpendicular direction Y (or both in the perpendicular direction Y and parallel direction X), is applied to the recording surface of the magnetic recording layer of a magnetic recording medium, and the intensity of the AC magnetic field is gradually decreased with time, to demagnetize the entire magnetic recording layer.
    Type: Grant
    Filed: October 23, 2001
    Date of Patent: June 8, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Akira Saito, Kiminori Sato, Eiichi Yonezawa
  • Patent number: 6747346
    Abstract: A container for a semiconductor sensor includes a housing body and a cover. On the upper surface of the housing body outer than the pressure detection room, a groove is provided to trap the gel protective material overflowed from the pressure detection room. The housing body and the cover are respectively provided with a recess portion and a protruding portion, engaging with each other, to secure adhesion of the cover to the housing body. The clearance between the housing body and the lead terminal is filled with filler that is formed by applying and curing polyimide resin. The sensor-mounting pit is provided with a relief portion for releasing excess portion of the adhesive, which is used for adhering the pedestal. The excess adhesive is released into the relief portion, to suppress creeping up of the adhesive.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: June 8, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Kazunori Saito, Kimihiro Ashino, Katsumichi Ueyanagi