Abstract: Disclosed are methods that result in substantial improvement of silicon-on-insulator (SOI) device manufacture. We have discovered that carbon can be advantageously used as a wetting agent in the melting-recrystallization (MR) method of producing SOI wafers. We have also found that contacting the wafer (typically subsequent to the formation thereon of a poly-Si layer on a SiO.sub.2 layer but prior to the completion of formation of a SiO.sub.2 cap layer on the poly-Si layer) with an atmosphere that comprises a wetting agent-containing molecular species (e.g., CH.sub.4, NH.sub.3), with the wafer at an appropriate elevated (e.g., 500.degree.-900.degree. C.) temperature, can reliably result in recrystallized Si films of high quality. Furthermore, we have discovered the existence of a previously unknown parameter regime (low thermal gradient across the resolidification front, typically no more than about 4.degree. C./mm) for the MR process that can result in a highly perfect (.chi.