Patents Represented by Attorney, Agent or Law Firm Saliwanchik, Lloyd & Saliwanchik
  • Patent number: 7880053
    Abstract: Methods of using genetically-transformed plants in the phytoremediation of lead are described. Unlike many organisms in which only 10-kDa ACBPs have been identified, there exists a family of six ACBPs in the model plant Arabidopsis. Other than a function in mediating the transfer of acyl-CoA esters in plant lipid metabolism, all six Arabidopsis ACBPs can bind the heavy metal lead and are therefore applicable for phytoremediation. These methods of phytoremediation will provide a cheap, simple and efficient method in the removal of contaminating lead from soil/water/environment by the growth of the ACBP-overexpressing genetically-transformed plants in the contaminated environment. There is also provided a method to remove lead from contaminated water.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: February 1, 2011
    Assignee: The University of Hong Kong
    Inventors: Mee Len Chye, Shi Xiao, Wei Gao
  • Patent number: 7879320
    Abstract: The present invention is related to pharmaceutical Poloxamer hydrogel formulations containing an interferon. In particular, the invention relates to sustained release hydrogel formulations of interferon-beta, method of preparation and use thereof.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: February 1, 2011
    Assignee: Ares Trading S.A.
    Inventors: Maria Dorly Del Curto, Ilaria Zambaldi, Silvia Pompili, Pierandrea Esposito
  • Patent number: 7880242
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electron mobility can be improved, and production residue and damage can be minimized.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: February 1, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Han Choon Lee
  • Patent number: 7880205
    Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: February 1, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Chang Hun Han
  • Patent number: 7874746
    Abstract: Disclosed are a camera module and a mobile terminal having the same, capable of simplifying the manufacturing process while reducing the fault rate and improving reliability of products. The camera module can include a camera housing having a support protrusion with an aperture formed at a center thereof and a predetermined mounting section provided at an inner portion; a plurality of lenses inserted and mounted in the mounting section of the camera housing so as to receive an optical image of a subject, where the support protrusion is provided at an upper portion of the lenses; an IR cut-off filter disposed below the lenses while sealing the mounting section; an image sensor; and a printed circuit board that digitalizes an image signal output from the image sensor.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: January 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jin Ho Lee
  • Patent number: 7875426
    Abstract: The subject invention concerns materials and methods for detecting nucleic acid sequences. One aspect of the invention concerns a silicon-based “biochip” comprising nucleic acid immobilized thereon. In one embodiment, the silicon comprises microcavities. The nucleic acid to be assayed for the presence of one or more target nucleic acid sequences is immobilized on the silicon. A nucleic acid, such as an oligonucleotide probe, having a sequence substantially complementary to the target nucleic acid sequence can be used to detect the immobilized nucleic acid on the silicon. If the nucleic acid used for detection hybridizes with a target nucleic acid sequence, the hybridized sequences can be detected directly or indirectly. In an exemplified embodiment, the oligonucleotide probe can be labeled with a detectable label, for example, a fluorescent molecule. The subject invention also concerns methods for detecting a target nucleic acid using a silicon-based biochip of the invention.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: January 25, 2011
    Assignees: University of South Florida, Alabama State University
    Inventors: Arun Kumar, Ashok Kumar, Shree R. Singh, Souheil Zekri
  • Patent number: 7875279
    Abstract: The invention relates to cells and organisms as well as to methods for producing said cells and organisms, according to which intermediates of the mevalonate-independent pathway for isoprenoid biosynthesis (MEP pathway) are enriched by deleting or inactivating genes. The derivatives can also be enriched by using enzyme inhibitors. The enriched intermediates may be used as substrates in enzyme activity tests. The inventive cells and organisms and the enriched intermediates can further be used in the production of medicaments.
    Type: Grant
    Filed: April 13, 2002
    Date of Patent: January 25, 2011
    Assignee: Bioagency AG
    Inventors: Hassan Jomaa, Matthias Eberl, Boran Altincicek
  • Patent number: 7871817
    Abstract: The invention relates to the rational mutagenesis of polypeptides of ?/? T-cell receptors that mediate an oncogen-specific T-cell response, nucleic acids encoding these and their use in the therapy, diagnosis and/or prevention of cancerous diseases. The invention further relates to a T-cell response-mediating MDM2-protein-specific ?/? T-cell receptor, which has been rationally mutated by means of the method according to the present invention, and the uses thereof.
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: January 18, 2011
    Assignee: Johannes Gutenberg-Universitat Mainz
    Inventors: Ralf-Holger Voss, Theobald Matthias
  • Patent number: 7873884
    Abstract: An RF/Microwave on-chip signal source for testing an integrated circuit embedded in a substrate is provided. The signal source includes an on-chip antenna embedded in the substrate to receive a signal from a signal source external to the substrate. The signal source also includes a frequency divider circuit also embedded in the substrate. The frequency divider converts one or more frequencies of the signal into an operating frequency of the integrated circuit, the signal at the operating frequency of the integrated circuit defining an on-chip test signal. The signal source further includes one or more output buffers embedded in the substrate to provide a signal interface with the integrated circuit.
    Type: Grant
    Filed: April 15, 2006
    Date of Patent: January 18, 2011
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Qizhang Yin, William R. Eisenstadt
  • Patent number: 7871979
    Abstract: The present invention relates to CSF3R polypeptide variants and their uses, particularly for therapeutic or prophylactic treatment in human subjects. The invention also relates to nucleic acids encoding said polypeptides, vectors comprising such nucleic acids and recombinant cells containing the same. The invention further discloses methods of producing such polypeptides, as well as methods and tools for detecting or dosing these polypeptides in any sample.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: January 18, 2011
    Assignee: Merck Serono SA
    Inventors: Melanie Yorke-Smith, Andreas Pigni
  • Patent number: 7871483
    Abstract: Provided is a method for enhancing an adhesive bond between a pile and a resin adhesive by maintaining a constant uniform positive pressure of the entire wrapped region regardless of the shrinkage in the resin adhesive. This invention enhances underwater adhesive bond by ensuring proper contact while curing. In one embodiment, constant inward pressure is created by encapsulating the repair and applying a vacuum. The invention can be used for a variety of underwater applications using different resins and different substrate materials. For instance, the invention could be used to repair damaged critical infrastructure, e.g. Bridges, dams, pipelines and locks. Local, state and federal agencies in US and elsewhere as well as marine and naval contractors would find great utility with the invention. The concept could be extended to all adhesion dependent repairs.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: January 18, 2011
    Assignee: University of South Florida
    Inventors: Gray Mullins, Rajan Sen
  • Patent number: 7871992
    Abstract: The present invention describes organophosphorus compounds of general formula (I) their preparation and their uses in the activation of gamma/delta T-cells, in the screening of GcpE and LytB enzyme inhibitors and in the prophylaxis and treatment of diseases in humans and animals.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: January 18, 2011
    Assignee: Bioagency AG
    Inventors: Hassan Jomaa, Oliver Wolf, Boran Altincicek, Mathias Eberl, Martin Hintz, Ann-Kristin Kollas, Armin Reichenberg, Jochen Wiesner
  • Patent number: 7868366
    Abstract: An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: January 11, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Min Hyung Lee
  • Patent number: 7867834
    Abstract: A manufacturing method of a semiconductor device according to an embodiment includes: forming a trench for a device isolation area and a semiconductor projection with a first width by etching a semiconductor substrate; forming an oxide film on the trench and the semiconductor projections; forming an insulating layer on the oxide film; exposing the upper surface of the semiconductor projection by polishing the insulating layer and the oxide film; forming a gate insulating layer at a lower region of the semiconductor projection; and etching the insulating layer and the oxide film on the substrate.
    Type: Grant
    Filed: July 18, 2007
    Date of Patent: January 11, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventors: Eun Soo Jeong, Jea Hee Kim
  • Patent number: 7866203
    Abstract: The invention relates to the analytical determination of poloxamers in a liquid protein sample.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: January 11, 2011
    Assignee: Ares Trading S.A.
    Inventor: Mara Rossi
  • Patent number: 7868368
    Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: January 11, 2011
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Dong Bin Park
  • Patent number: 7864455
    Abstract: Disclosed is an imaging lens. The imaging lens includes a first lens having positive (+) power, a second lens having negative (?) power, and a third lens having positive (+) power and an inflection point on an imaging surface thereof facing an image side, wherein the first to third lenses are sequentially arranged from an object, and the second lens has power stronger than power of the first and third lenses.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: January 4, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Duk Keun Kwon
  • Patent number: 7863073
    Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises at least one unit pixel, an interlayer dielectric, a color filter, a planarization layer, and a microlens. The microlens has a smooth surface after performing a plasma treatment process.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: January 4, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Kyung Min Park
  • Patent number: 7863077
    Abstract: An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: January 4, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Dong Bin Park
  • Patent number: 7865135
    Abstract: A method for receiving satellite broadcasting includes: amplifying an inputted satellite broadcasting signal; converting the amplified signal to a baseband signal by mixing the amplified signal with a center frequency of a selected channel; and varying a channel bandwidth of the baseband signal.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: January 4, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kwang Jae Park