Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer without an aromatic chromophore, where the polymer comprises a structural unit derived from an aminoplast and a structural unit derived from a diol, triol, dithiol, trithiol, other polyols, diacid, triacid, other polyacids, diimide or mixture thereof, where the diol, dithiol, triol, trithiol, diacid, triacid, diimide, diamide or imide-amide optionally contain one or more nitrogen and/or sulfur atoms or contain one or more alkene groups. The invention also relates to the novel polymer and a process for using the novel antireflective coating composition in a lithographic process.

Abstract: The invention relates to the use of polysilazanes as a permanent coating on metal and polymer surfaces for preventing corrosion, increasing scratch resistance and to facilitate easier cleaning. The invention comprises a solution of a polysilazane or a blend of polysilazanes of the general formula 1 —(SiR?R?—NR??)n—??(1) where R?, R? and R?? are identical or different and independently of one another represent hydrogen or an optionally substituted alkyl, aryl, vinyl or (trialkoxysilyl)alkyl group and n represents a whole number and is calculated in such a way that the polysilazane has a numerical average molecular weight of 150 to 150 000 g/mol, in a solvent. The invention also relates to a method for producing the coating.

Abstract: The present invention provides a polysilazane-containing composition capable of forming a dense siliceous film more rapidly and at a lower temperature than known polysilazane-containing composition. In a process for forming the siliceous film, the composition comprising a polysilazane compound, a particular amine compound and a solvent is coated on a substrate and converted into a siliceous substance. The particular amine compound preferably contains two amine groups separated from each other at the distance corresponding to five C—C bonds or more, and the amine groups preferably have hydrocarbon substituent groups.

Abstract: A coating for metals containing a polysilazane solution or a mixture of polysilazanes of the general formula (I) —(SiR?R?-NR??)n—??(1) wherein R?, R? and R?? are identical or different and independently represent hydrogen or an optionally substituted alkyl, aryl, vinyl or (trialkoxysilyl)alkyl radical, wherein n is a whole number and n is dimensioned in such a way that the polysilazane has a number-average molecular weight of 150 to 150 000 g/mol, in a solvent and at least one catalyst. The invention also relates to a method for the production of the coating.

Abstract: The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.

Abstract: A coating for surfaces, comprising at least one of the polysilazanes having the formula 1 and/or formula 2 where n is an integer and is dimensioned such that the perhydropolysilazane has a number-average molecular weight of 150 to 150 000 g/mol, a solvent and a catalyst and, if desired, one or more cobinders, for preventing scaling and corrosion on metal surfaces. The hardened coating has a thickness of 0.2-10 micrometers, preferably 0.3 to 5 micrometers. It is particularly useful as a protective coating for metals for preventing scaling and corrosion.

Abstract: The instant invention relates to a process for the preparation of an aqueous suspension of anionic colloidal silica having a neutral pH which is stable over time and comprises individualized particles of colloidal silica which are not bound to one another by siloxane bonds. The instant suspensions show high storage stability and are particularly useful for the clarification of beer, for the preparation of cosmetic formulations, for the production of ink for printers, for paints and for anticorrosive treatments.

Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.

Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.

Abstract: The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

Abstract: The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.

Abstract: The present invention relates to an antireflective composition comprising a polymer, a thermal acid generator and optionally a crosslinking agent, where the polymer comprises at least one hydrophobic unit (1), at least one chromophore unit (2), at least one unit with a crosslinking site (3) and optionally a unit capable of crosslinking the polymer, where, R1 to R8 are independently selected from hydrogen and C1-C4 alkyl, W1 is a fully or partially fluorinated alkylene group, X is selected from F, H and OH; W2 comprises a chromophore group, and W3 Y comprises a crosslinking site. The invention also relates to a process for using the antireflective coating composition.

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: A compound of the formula (I) where the symbols and indices are each defined as follows: A is A?, R or O—R; where R is a straight-chain, branched or cyclic, saturated or unsaturated aliphatic radical having 1-8 carbon atoms; A? is the same or different and is B is a bond, —O—C(O)—, —C(O)—O—, —O—C(O)—, —C(O)—NH—, —NH—C(O)—, —C(O)—O—CH2—CH(OH)—CH2—O, —O—CH2—CH(OH)—CH2—O—(O)C—, —O—C(O)—O—, —O—C(O)—NH— or —NH—C(O)—O—; R1 is H or OH; m is 1, 2, 3, 4 or 5; Y is n is a positive rational number ?3; E is the same or different and is —CH—CHR2—, —CHR2—CH2—, —CH2—CHR2—O—, —O—CHR2—CH2—, —(CH2)r—O— or —O—(CH2)—; R2 is H or CH3 and r is 1 or 4, is suitable as a light-sensitive component for photoresists.

Abstract: The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.

Abstract: The present invention relates to an antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, at least one unit of structure 2, where, R1 to R12 are independently selected from hydrogen and C1-C4 alkyl, structure 1 has a configuration selected from cis, trans or mixture thereof, and x and y are the mole % of the monomeric units in the polymer. The invention also relates to a process for manufacturing a microelectronic device.

Abstract: The invention relates to an antireflective coating composition comprising a polymer, a crosslinker and a thermal acid generator, where the polymer comprises at least one unit of structure (1), at least one unit of structure (2) and at least one structure of structure (3), where R1 to R9 is independently selected from H and C1-C6 alkyl, R? and R? is independently selected from H and C1-C6 alkyl, X is C1-C6 alkylene, Y is C1-C6 alkylene. The invention further relates to a process for imaging a photoresist coated over the antireflective coating composition.

Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), ?represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

Abstract: The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.

Abstract: The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.