Patents Represented by Law Firm Schewegman, Lundberg Woessner & Kluth P.A.
  • Method and apparatus for reducing fixed charge in semiconductor device layers
    Patent number: 5933760
    Abstract: The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O.sub.3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.
    Type: Grant
    Filed: November 18, 1997
    Date of Patent: August 3, 1999
    Assignee: Micron Technology Inc.
    Inventors: Ravi Iyer, Randhir P. S. Thakur, Howard E. Rhodes