Abstract: A method of creating ultra tin body fully-depleted SOI MOSFETs in which the SOI thickness changes with gate-length variations thereby minimizing the threshold voltage variations that are typically caused by SOI thickness and gate-length variations is provided. The method of present invention uses a replacement gate process in which nitrogen is implanted to selectively retard oxidation during formation of a recessed channel. A self-limited chemical oxide removal (COR) processing step can be used to improve the control in the recessed channel step. If the channel is doped, the inventive method is designed such that the thickness of the SOI layer is increased with shorter channel length. If the channel is undoped or counter-doped, the inventive method is designed such that the thickness of the SOI layer is decreased with shorter channel length.

Abstract: A disposable filter cartridge comprising a housing substantially including a bottom and an upright side wall, the underside or bottom having one or more holes, said filter cartridges being provided at its top and at least a part of its bottom with filter material or a filter film. At least the filter material for the top is connected to the side wall or a flange-shaped extension thereof by means of a sealed joint. The filter material destined for the underside or bottom of the housing is cup-shaped and is received in the housing of the filter cartridge so as to be immovable.