Abstract: Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.

Abstract: Disclosed herein is a sonic resonator system for use in testing the adhesive bond strength of composite materials. Also disclosed herein are a method of calibrating the sonic resonator system to work with a particular composite bond joint, and a method of non-destructive testing the “pass-fail” of the bonded composite bond strength, based on a required bond strength.

Abstract: Hair is permanently removed from a patient's skin by transcutaneously focusing high intensity acoustic energy at hair follicles and at dermal papilla regions during a telogen phase of hair growth and applying sufficient energy to destroy said follicles and said dermal papilla regions, so that hair is removed and regrowth is prevented. Typically, a region of a patient's skin is first ultrasonically imaged to show the location of a plurality of individual hair follicles and dermal papilla regions. The imaged hair follicles and dermal papilla regions are then treated using a system which automatically directs high intensity acoustic energy at each follicle and dermal papilla region.

Abstract: We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.

Abstract: A shoe, including a sandal, with a transparent plastic film visible display within a permanent pouch or detachable showcase, constructed to receive, retain and display interchangeable inserts. Insert array blanks provide for Do It Yourself heat or pressure sensitive adhesive applications or can be Pre Customized fashion designs, both with quick and easy in and out insertion and replacement to match or coordinate with a variety of fashionable ensembles. The pouch or detachable showcase is mounted on the shoe in a manner which retains the insert in a substantially constant position while the wearer of the shoe is walking.

Abstract: A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface.

Abstract: An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.

Abstract: The present invention pertains to a method of ion chromatography wherein a specialized electrodeionization (EDI) apparatus is used for simultaneous ion suppression of cations from a flowing base containing an anion sample of interest and ion suppression of anions from a flowing acid containing a cation sample of interest. The methods described herein allow for the ion suppression of samples containing chloride, nitrate, and other electrochemically active anions, as well as sodium, potassium, and other electrochemically active cations, without causing damage to the suppressor.

Abstract: We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.

Abstract: Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.

Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: A ducted fan assembly includes a housing unit, a motor, and a propeller. The housing unit includes a duct member, and a hollow seat member disposed in the duct member. The motor is mounted to an exterior of the seat member, and includes a power cord extending through the seat member. The propeller is mounted to the motor and is driven thereby to generate an airflow that flows through the duct member and that acts on the motor.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and may be partially integrated or fully integrated into a processing chamber which also includes diffusion bonded layers.

Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Abstract: We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of a copper seed layer on a wafer substrate without excessive build-up on the openings of each of the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. The method also comprises depositing a second portion of the metal seed layer while redistributing at least a portion of the bottom coverage material to the sidewalls of each recessed device feature, to provide a uniform seed layer coverage over the interior surface of the recessed device features.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The fluid delivery system includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Abstract: An appliance stabilizing device which is useful in securing an appliance in position against a supporting structure surface. The device includes a plurality of brackets which are selectively positionable on an appliance, with a plurality of elongated members, each pivotally attached to a bracket. Each elongated member has at least one aperture spaced a distance along the length of the elongated member from the pivotal point with the bracket. The elongated member is attached to a support surface, frequently a bottom plate or sole pate of the wall. The bracket includes apertures spaced from each other in a generally triangular configuration or a configuration of equivalent strength. The elongated member is typically pivotally attached at the apex of a generally triangular configuration of apertures. The device is self adjusting during attachment of the appliance to a supporting structure.

Abstract: The present invention pertains to a method of ion chromatography wherein a specialized electrodeionization (EDI) apparatus is used for (1) the preparation of a pure acid or pure base for use as an eluent in a chromatographic separation column and/or (2) for ion suppression (or neutralization) of the acid or base after it has been used to elute ions from a chromatographic separation column. Methods for trace ion removal, acid and base neutralization, and ion suppression using a specialized EDI apparatus are also described. The methods described herein allow for the ion suppression of samples containing chloride, nitrate, and other electrochemically active anions, without causing damage to the suppressor.

Abstract: We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.