Abstract: A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 ?m, a bow less than about 5 ?m, and a total thickness variation of less than about 2.0 ?m.

Abstract: A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent.

Abstract: An instrument and associated method are disclosed for conducting microwave assisted chemical reactions. The instrument includes a microwave cavity, preferably a closed microwave cavity, for conducting microwave assisted chemical reactions, and a source for applying microwave radiation within the cavity and to a vessel and its contents. The instrument also includes an illumination source for illuminating the vessel and its contents, as well as a camera or spectrometer for visually observing the vessel and its contents, an infrared detector for monitoring the temperature of the vessel and its contents, and a filter for preventing the illumination source from saturating the infrared detector, thereby enabling concurrent visual observation and infrared monitoring.

Abstract: An optical fibre for propagating a signal in different modes, including a longitudinal length “a” of a change in the tension buildup in the optical fibre and a longitudinal distance “L” between two such changes are in accordance with the equation, a<=0.5 L, for at least part of the optical fibre.

Abstract: A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form a plurality of silicon carbide crystal plates. The silicon carbide crystal plates can be used as seed crystals in subsequent sublimation steps in a manner that promotes the growth of silicon carbide crystals in different crystallographic directions to thereby terminate defect formation.

Abstract: A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.

Abstract: Disclosed is a chromatic dispersion compensating optical fiber comprising a central core, an intermediate cladding having a width (r2?r1) of 2.0 microns or greater, and a depressed inner cladding having a refractive index difference Dn3 with the external optical cladding of ?3.0×10?3 or lower. At a wavelength of 1550 nm, the optical fiber exhibits a positive chromatic dispersion of 21 ps/(nm·km) or higher and a ratio of mode radius to intermediate cladding radius of (W02/r2) of 0.7 or less. The present optical fiber has a good figure of merit value and limited bending and microbending losses. The optical fiber can be rolled up in a housing of reduced size in a chromatic dispersion compensating optical module having limited insertion losses and reduced polarization mode dispersion.

Abstract: The present invention is directed to an apparatus suitable for securing bedding. The apparatus of the invention includes at least two complimentary generally U-shaped components having mating surfaces adapted to cooperate with one another to secure bedding placed therebetween and to form a pocket of the bedding, which can be suitable for receiving an infant. The apparatus of the invention further includes a mechanism for releasably securing the lower member and the upper member to each other, which can include a plurality of magnets having opposing polarities positioned along the mating surfaces of the U-shaped members to mate with a corresponding magnet.

Abstract: The invention is a method of inspecting a semiconductor wafer surface for scratches. The method includes positioning a semiconductor wafer for illumination by a radiation source and adjacent a background material that will absorb radiation from the radiation source, directing radiation at a surface of the wafer from the radiation source that has a wavelength that will be absorbed by the fundamental absorption of the wafer, filtering or otherwise limiting the radiation to allow only radiation having wavelengths that are absorbed by the fundamental absorption of the wafer to pass, and detecting radiation scattered on the surface of the wafer and filtered, by position, to thereby identify the location of the scratches on the surface of the wafer, while the absorption of the background material prevents other radiation from the source from interfering with the detection of the scratch-scattered radiation.

Abstract: A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source material, a substrate suitable for epitaxial growth of GaN thereon, ammonia, a transporting agent that will react with GaN to form gallium-containing compositions, and a carrier gas to a temperature sufficient for the transporting agent to form volatile Ga-containing compositions from the gallium nitride source material. The method is characterized by maintaining the temperature of the substrate sufficiently lower than the temperature of the source material to encourage the volatile gallium-containing compositions to preferentially form GaN on the substrate.

Abstract: A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.

Abstract: A method for removing supports from a three-dimensional objected formed by selective deposition modeling. The three-dimensional object is formed from a curable phase change material and the supports are formed from a non-curable phase change material. The curable phase change material contains between about 5% to about 25% of a non-reactive wax in order to achieve the desired phase change characteristics of the material. When removing the supports with heat, discoloration undesirably occurs in the three-dimensional object as the non-reactive wax migrates within the object. The method prevents wax migration by cooling the object slowly past the freezing point of the build material such that a temperature differential no greater than about 5° C. is present within the object. With the preferred build material having a freezing point of about 49.5° C., this is achieved by lowering the temperature between about 62° C. to about 52° C.

Abstract: A flash curing system for solid freeform fabrication which generates a plurality of radiation emitting pulses that forms a planar flash. The planar flash initiates curing of a curable material dispensed by a solid freeform fabrication apparatus. The radiation emitting pulses have a high peak power value that releases a sufficient quantity of free radicals from the photoinitiator to initiate curing and overcome the problem of oxygen inhibition. Substantially less power is consumed and less heat generated by the flash curing system compared to conventional continuous emission curing systems.

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract: A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content.

Abstract: The invention is an instrument and method for microwave-assisted chemical synthesis. The instrument includes a source of microwave radiation for applying microwave energy to a sample, a microwave cavity in wave communication with the source for holding the sample during the application of microwave energy, and a substantially monochromatic radiation source in electromagnetic communication with the cavity for applying substantially monochromatic light to the sample. The instrument further includes a detector positioned to detect Raman scattering of light from the monochromatic source by the sample, and a controller in signal communication with the microwave energy source and the Raman scattering detector for moderating the application of microwave energy to the sample based upon the detected Raman scattering.

Abstract: A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

Abstract: The present invention relates to slow-crystallizing polyethylene terephthalate resins that possess a significantly higher heating crystallization exotherm peak temperature (TCH) as compared with those of conventional antimony-catalyzed polyethylene terephthalate resins. The polyethylene terephthalate preforms of the present invention, which possess improved reheating profiles, are especially useful for making polyester bottles that have exceptional clarity and that retain acceptable dimensional stability upon being hot-filled with product at temperatures between about 195° F. and 205° F.

Abstract: A knit sock useful for patients susceptible to foot problems resulting from diabetes or other conditions includes a leg section and a foot section. The leg section has sufficient expandability to be drawn over and cover at least a portion of a leg of a wearer. The foot section includes a heel section, a toe section, a sole section, and an instep section. The instep includes a ventilation panel and a flex zone, each having a different stitch construction. The ventilation panel allows air to pass through the sock and the flex zone prevents bunching or wrinkling of the material against the skin of the foot.