Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm?2.

Abstract: A method and associated instrument are disclosed for increasing the sequential rate at which a series of microwave assisted chemical reactions that potentially generate high pressure can be carried out.

Abstract: The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on each of a first and second SiC seed to a depth of greater than about 20 ?m while protecting the opposite or back face on each of the first and second SiC seeds. Protection of the front faces occurs by placing the faces sufficiently close to one another to shield the back faces from being etched during etching of the respective unprotected front faces. Separation of the first and second SiC seeds occurs after the etching of the front faces is complete.

Abstract: The invention is a tackle container that incorporates interchangeable inserts. The inserts secure different kinds of fishing lures and baits. For example, the inserts hold segmented lures within notched upright posts. In this regard, the inserts may be suitably structured to hold spinner bait lures, buzz bait lures, or other fishing lures with segmented bodies. Moreover, the inserts are interchangeable to facilitate a wider variety of uses for the tackle container.

Abstract: There is provided a transportable service cart with protective bumpers attached to the vertical corners of the service cart. The service cart of the present invention also comprises drawer handles that do not extend beyond a front surface of the drawers of the service cart or do not extend substantially beyond the front faces of the flanking protective bumpers. The service cart comprises features that prevent or minimize damage to the service cart, or to an object struck by the service cart, when the service cart engages another object. The protective bumpers attached to the outer side of each vertical corner of the service cart extend along at least a substantial portion of the height of the vertical corners to absorb a significant portion of an impact between the service cart and the other object. The drawer handles are attached to recessed surfaces in the front surfaces of the drawers and are advantageously bar type handles or extruded handles that comprise a gripping surface.

Abstract: A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

Abstract: A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm?2 for a 4 degree off-axis wafer.

Abstract: An instrument is disclosed for carrying out controlled microwave assisted chemical processes, and that is particularly useful for handling relatively small samples. The instrument includes a microwave-transparent reaction vessel with an open mouth, a pressure-resistant seal on the mouth of the vessel, and a needle, portions of which penetrate the seal with a first end of the needle and provide fluid communication into the vessel. A pressure transducer is at the opposite end of the needle and in fluid communication with the interior of the vessel through the needle. The instrument defines a pressure control flow path from a portion of the needle outside of the vessel to a fluid port, the flow path being in communication with the needle, the interior of the vessel and the transducer. A controllable pressure release valve for the flow path is-associated with the port.

Abstract: A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and subsurface damage, thereafter etching the same surface with a selective etch to thereby develop etch-generated structures from at least any basal plane dislocation reaching the substrate surface that will thereafter tend to either terminate or propagate as threading defects during subsequent epilayer growth on the substrate surface, and thereafter growing a first epitaxial layer of silicon carbide on the twice-etched surface.

Abstract: An open-faced spinning reel assembly having a two-piece frame and leg assembly in which the leg has a tab extending therefrom that is secured to the frame so as to be concealed in the final assembly. The frame can be attached to the tab with screws or other fasteners, or by insertion molding, and the entire assembly of a frame, leg, and cover finished for an aesthetically pleasing appearance. The leg can be made from metal or metal alloy and the frame from glass-filled nylon.

Abstract: An adjustable support device for the knee provides in one embodiment a strap, a primary tensioning device positioned on the strap, and a secondary tensioning device carried on the strap. A preferred embodiment of the device includes an elongate bar secured to the strap between first and second ends of the strap by a patch of material, stitching, or any number of known adhesives. The secondary tensioning device may include one or more patches of elastic, or alternatively, inelastic material that provide radially-directed pressure against the knee joint. In another embodiment, the secondary tensioning device provides pairs of ligatures secured to each end of the elongate bar for concentrating radially-directed pressure against the knee joint.

Abstract: A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.

Abstract: The present invention relates to methods of making imide-modified polyester imide resins. The present invention further relates to forming these imide-modified polyester imide resins into articles, such as preforms, bottles, containers, sheets, films, fibers, and injection molded parts.

Abstract: A self-texturing hollow fiber that exhibits a desirable tendency to coil rather than to bend sharply or zig-zag. In one embodiment the invention is a hollow polymer filament having a generally cylindrical cross-section. The filament is further defined by a cylindrical wall formed of at least two generally C-shaped sections, each section including first and second ends separated by an intermediate portion in which no two points along the cross-section of the wall corresponding to the intermediate portion share the same width. In another aspect, the invention is a coiled bilateral hollow polymeric filament in which the two component polymers are identical except for their degree of orientation. The filament is further defined by a non-linear wall formed of at least two non-linear sections.

Abstract: A method and apparatus for rapidly and accurately determining the fat and oil content of a sample using microwave drying and NMR analysis is disclosed. The method and apparatus incorporate a low mass, porous, hydrophilic and lipophilic sample pad that ensures that the entire sample is subjected to NMR analysis. The method and apparatus according to the invention are suitable for rapidly determining the fat and oil content of samples collected during a production process and for process or quality control.