Abstract: A signal processor is disclosed for operating on signals provided by a photodetector, particularly photodetectors, or arrays thereof, for use in image processing. The processor is particularly well implemented by use of charge-coupled device technology for sampling and processing the photodetector signals. The photodetector signals are sampled many times in a frame to provide a combined result representation of an image element in that frame to thereby reduce noise associated therewith.

Abstract: A logic family is provided capable of accomplishing a logic function for each transistor used, i.e., one transistor per logic gate. A plurality of logic gate types are shown, each capable of a different logic function. Nonlinear loads are used in the logic gate circuits.

Abstract: A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

Abstract: A pyroelectric detector as formed by parylene C polymer film.

Abstract: A field-effect transistor device is provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

Abstract: A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

Abstract: An ultraviolet sensitive photodiode is formed in a body of first conductivity type GaP. A region of second conductivity type with a graded impurity distribution is formed in the body, and a thin layer (preferably about 100A to 300A) is then removed from the front surface of the body. The removal of the thin layer significantly enhances the performance of the UV sensitive photodiode.

Abstract: A logic family is provided capable of accomplishing a logic function for each transistor used, i.e. one transistor per logic gate. A plurality of logic gate types as shown, each capable of a different logic function.

Abstract: A hybrid mosaic IR/CCD focal plane structure is fabricated using planar thin film interconnects. Rows of detectors are formed on an integrated circuit substrate so that the rows of detectors are adjacent to rows of electrical contacts on the integrated circuit. Contact pads are plated onto the rows of contacts and the regions between adjacent rows of detectors are backfilled with an insulating material. The insulating material is then lapped to expose the contact pads and to form an essentially coplanar surface with the detectors. Thin film interconnects are formed over the coplanar surface between the exposed contact pads and detectors in the adjacent row.

Abstract: Apparatus is provided for changing the phase, and possibly the duty cycle, of two amplitude levels, periodic input signal. This is accomplished by providing a phase measuring signal related to the phase point in each period of the input signal.

Abstract: Transition circuits are provided for interfacing logic gate circuits from different kinds of logic gate families where the characteristic logic state voltage levels differ between the families as do the separations between these logic state voltage levels as they occur in these logic families.

Abstract: A GaP photodiode having a shallow PN junction and an internal directed surface electric field exhibits high quantum efficiency in detecting ultraviolet wavelengths.

Abstract: An improved method of determining the energy bandgap of an epitaxial semiconductor layer on a substrate corrects for an overestimation of energy gap yielded by normal optical transmittance measurements. The overestimation of energy bandgap is caused by a graded bandgap region which exists between the epitaxial semiconductor layer and the substrate.

Abstract: Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant. The mounting of semiconductor stress sensors on mounts of a different material type in a manner minimizing offset temperature shifts is disclosed.

Abstract: A logic family is provided capable of accomplishing a logic function for each transistor used, i.e. one transistor per logic gate. A plurality of logic gate types are shown, each capable of a different logic function. These logic gate types can be connected with one another to provide the "DOT--AND" logic function.

Abstract: A densitometer and sonic velocimeter are provided through use of a transducer to provide energy transductions and for providing vibratory energy. In this way, longitudinal wave energy can be imparted to the surrounding fluid. Indications from the transducer provide a representation of the fluid density.

Abstract: Contact electrodes and electronic device interconnection pathways are formed by sputtering and by deposition methods supplemented by plating. These may be formed, for example, on integrated circuit wafers or mounting substrates.

Abstract: An aperture stop is provided near the detector imaging lens of a thermal imaging system to prevent the infrared detector from viewing portions of the thermal imaging system itself, particularly the walls of the optical housing and the housing of the scanner within the optical housing. This eliminates "shading" problems which can occur in thermal imaging systems having a moving scanner within the optical housing.

Abstract: An improved method for providing electrical connection to a photodetector in a Dewar flask is disclosed. A plurality of conductive paths are formed on the inner flask of the Dewar. Each of the conductive paths extends from the side surface on to the top surface of the inner flask. A photodetector having lead tabs is mounted to the top surface of the inner flask with the lead tabs aligned with the conductive paths. The lead tabs are bonded to the conductive paths to provide electrical connection to the photodetector.

Abstract: A method for batch fabricating semiconductor stress sensors having the semiconductor material diaphragm rigidly joined to a support flange made of the same semi-conducting material. Two processed silicon slices, one to form diaphragms and the other to form support flanges, are rigidly joined. The joined slices are then partitioned to form individual stress sensors.