Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.
Type:
Grant
Filed:
August 15, 2007
Date of Patent:
December 22, 2009
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.