Abstract: An impurity concentration profile is established in a solid by attaching solid to a heat sink and irradiating it with one or more fast laser pulses. The impurity may initially be located in a surface layer or it may be dispersed throughout the solid.
Type:
Grant
Filed:
February 3, 1975
Date of Patent:
February 24, 1976
Assignee:
The United States of America as represented by the Secretary of the Navy