Abstract: A machinable high Tc ceramic superconductor is formed by weighing and mixing appropriate stoichiometric amounts of Bi.sub.2 O.sub.3, SrCO.sub.3, CaCO.sub.3, and CuO (BSCCO), removing carbonates from the mixture, melting the mixture, casting the melted mixture into a mold, and inducing superconductivity and growth of randomly oriented platelets in the cast.
Type:
Grant
Filed:
June 25, 1990
Date of Patent:
June 1, 1993
Assignee:
The United States of America as represented by the Secretary of the Navy
Inventors:
Roy J. Rayne, Louis E. Toth, L. David Jones, Robert J. Soulen, Jr., Barry A. Bender
Abstract: Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.
Type:
Grant
Filed:
December 15, 1989
Date of Patent:
December 4, 1990
Assignee:
The United States of America as represented by the Secretary of the Navy
Inventors:
Sharka M. Prokes, Wen F. Tseng, Aristos Christou