Abstract: A semiconductor device includes a combination substrate having a bulk silicon region, and a silicon-on-insulator (SOI) region. The SOI region includes a crystallized silicon layer formed by annealing amorphous silicon and having isolation trenches formed therein so as to remove defective regions, and isolation oxides formed in the isolation trenches.
Type:
Grant
Filed:
December 27, 2000
Date of Patent:
November 30, 2004
Assignee:
International Business Machines Corporation
Inventors:
Howard H. Chen, Louis L. Hsu, Li-Kong Wang