Abstract: Various methods of manufacturing are disclosed. In one aspect, a method of manufacturing is provided that includes forming an anti-reflective coating on a structure on a substrate. A first spacer and a second spacer are formed adjacent to the structure. The first spacer covers a first portion of the substrate and the second spacer covers a second portion of the substrate. The anti-reflective coating is removed while the first and second spacers are left in place to protect the first and second portions of the substrate. The method provides for anti-reflective coating application and removal with reduced risk of active region damage.

Abstract: Various circuit structures incorporating masks and anti-reflective coatings and methods of fabricating the same are provided. In one aspect, a circuit structure is provided that includes a substrate and a first photosensitive film on the substrate. The first photosensitive film is photosensitive to a first electromagnetic spectrum and anti-reflective of a second electromagnetic spectrum that differs from the first electromagnetic spectrum. A second photosensitive film is on the first photosensitive film. The second photosensitive film is photosensitive to the second electromagnetic spectrum whereby exposure by the second electromagnetic spectrum will activate the second photosensitive film but not the first photosensitive film and exposure by the first electromagnetic spectrum will activate unmasked portions of the first photosensitive film. The first photosensitive film doubles as an anti-reflective coating that may be patterned anisotropically using lithographic techniques.

Abstract: Various methods are provided of forming capacitor electrodes for integrated circuit memory cells in which out-diffusion of dopant from doped silicon layers is controlled by deposition of barrier layers, such as layers of undoped silicon and/or oxide. In one aspect, a method of forming hemispherical grain silicon on a substrate is provided that includes forming a first doped silicon layer on the substrate and a first barrier layer on the doped silicon layer. A hemispherical grain polysilicon source layer is formed on the first barrier layer and a hemispherical grain silicon layer on the hemispherical grain polysilicon source layer. By controlling out-diffusion of dopant, HSG grain size, density and uniformity, as well as DRAM memory cell capacitance, may be enhanced, while at the same time maintaining reactor throughput.

Abstract: Various embodiments of a measurement tool are disclosed. In one aspect, a measurement tool is provided that includes a frame that has a first member. A second member is provided that is moveable relative to the first member along a first axis and a second axis. The first and second members have first and second cooperating structures engageable to enable the second member to be moved downward along the second axis to a preselected elevation when the second member is moved to a preselected position along the first axis. The movement of the second member along the first axis is constrained when the second member is moved to the preselected elevation. A meter is coupled to the second member for measuring feature heights. The meter has a contact surface that contacts the feature when the second member is moved to the preselected elevation. The tool provides for non-destructive probe card pin height measurement.

Abstract: Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.

Abstract: An apparatus for and a method of introducing a gas into a vacuum processing chamber are provided. In one aspect, a processing apparatus is provided that includes a vacuum processing chamber, a first source of gas coupled to the vacuum processing chamber, and a fluid actuated valve for regulating the flow of the gas from the first source of gas to the vacuum processing chamber. The fluid actuated valve is operable to open in response to a flow of an actuating fluid and has a minimum valve opening pressure. A valve is provided for enabling the actuating fluid to flow to the fluid actuated valve. A controller is provided for selectively modulating the flow of the actuating fluid to the fluid actuated valve whereby the pressure of the actuating fluid is increased incrementally from an initial pressure to at least the minimum valve opening pressure. The apparatus reduces the risk of troublesome gas bursts in vacuum processing chambers.

Abstract: Various methods of fabricating substrate trenches and isolation structures therein are disclosed. In one aspect, a method of fabricating a trench in a substrate is provided. An oxide/nitride stack is formed on the substrate. An opening with opposing sidewalls is plasma etched in the silicon nitride film until a first portion of the oxide film is exposed while second and third portions of the oxide film positioned on opposite sides of the first portion remain covered by first and second portions of the silicon nitride film that project inwardly from the opposing sidewalls. The oxide film is etched for a selected time period in order to expose a portion of the substrate and to define first and second oxide/nitride ledges that project inwardly from the opposing sidewalls. The substrate is etched to form the trench with the first and second oxide/nitride ledges protecting underlying portions of the substrate.

Abstract: Methods and apparatus for inspecting a feature on a wafer surface are provided. In one aspect a method of inspecting a feature on a film surface is provided that includes illuminating the feature with laser radiation and detecting radiation scattered from the feature with a plurality of detectors. Each of the plurality of detectors has a known position. A position of the feature observed by each of the plurality detectors is computed based upon the radiation scattered from the feature. An average position of the positions observed by each of the plurality of detectors is computed. A first value for each of the plurality of detectors is computed that is the scalar product of the known position of a given detector with the difference of the position of the feature observed by that given detector and the average of the positions observed by each of the plurality of detectors.

Abstract: Integrated circuits with transistors exhibiting improved junction capacitances and various methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a doped region in an active area of a substrate wherein the doped region has a first conductivity type and a first horizontal junction. A first source/drain region of the first conductivity type is formed in the active area with a second horizontal junction. A second source/drain region of the first conductivity type is formed in the active area with a third horizontal junction and a lateral separation from the first source/drain region that defines a channel region. The second and third horizontal junctions are positioned substantially at the first horizontal junction. The portion of the doped region positioned in the channel region is doped with an impurity of a second conductivity type that is opposite to the first conductivity type.

Abstract: Various methods of inspecting circuit structures are provided. In one aspect, a method of detecting structural defects in a circuit structure is provided. A natural frequency of the circuit structure is determined and the circuit structure is immersed in a liquid. A first plurality of sonic pulses is sent through the liquid. The first plurality of sonic pulses have a first frequency range selected to produce a plurality of collapsing bubbles proximate the circuit structure. The collapsing bubbles produce a second plurality of sonic pulses that have a second frequency range near or including the natural frequency of the circuit structure whereby the second plurality of sonic pulses causes the circuit structure to resonate. Thereafter, the circuit structure is inspected for structural damage. Early identification of crystalline defects is facilitated.

Abstract: Various methods of fabricating a conductor structure are provided. In one aspect, a method of fabricating a conductor structure on a first workpiece is provided. A silicon film is formed on the first workpiece. An anti-reflective coating is formed on the silicon film. A mask is formed on a first portion of the anti-reflective coating, while a second portion thereof is left unmasked. The second portion of the anti-reflective coating and the silicon film are etched. The mask is removed, and the anti-reflective coating is removed by isotropic plasma etching. Use of isotropic etching for anti-reflective coating removal eliminates thermal shock associated with heated acid bath anti-reflective coating removal.

Abstract: Various embodiments of an umbilical are provided. In one aspect, an umbilical is provided that includes a first tube, a second tube positioned in the first tube and a plurality of third tubes positioned in the first tube. Each of the plurality of third tubes has an inner polymer sleeve and an outer sleeve of carbon fibers in an epoxy matrix positioned around the polymer sleeve. The composite tubes yield a lighter umbilical that is easier to handle than a comparably sized conventional umbilical incorporating steel inner tubing and is more tolerant of dynamic bending and hydrostatic pressure loading.

Abstract: Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

Abstract: Various embodiments of a golf device for use on a putting surface are provided. In one aspect, a golf device for use on a putting surface is provided that includes a ball that has a center and a first outer diameter. First and second annular members are coupled to the ball in substantially parallel spaced-apart relation. The spacing of the first and second annular members defines a spherical zone of the ball that projects radially outwardly from the center beyond the outer peripheral surfaces of the first and second annular members. The first and second diameters of the first and second annular members are sized so that a first portion of the first outer peripheral surface and a second portion of the second outer peripheral surface are positioned substantially at the putting surface. The device provides rapid tactile and visual feedback of a misstroke.

Abstract: Various embodiments of a circuit device for detecting the presence of unwanted conductor structures in insulation structure seams and methods of making the same are provided. In one aspect, a circuit device is provided that includes an insulating structure positioned on a substrate and a first conductor structure that has a first member positioned on the insulating structure. A second conductor structure is provided that has a second member positioned on the insulating structure. The second member projects toward the first conductor structure and the first member projects toward the second conductor structure, but the first and second conductor structures are not in physical contact. A current flowing between the first and second conductor structures when a bias is applied between the first and second conductor structures is indicative of a third conductor structure present on the insulating structure and contacting the first and second members.

Abstract: Various methods of inspecting a workpiece for residue are provided. In one aspect, a method of fabricating a conductor layer on a substrate is provided that includes forming an aluminum-copper film on the substrate in a first processing chamber and forming an anti-reflective coating on the aluminum-copper film in a second processing chamber. The substrate is moved from the second processing chamber into a cooling chamber to quench the substrate. A first time interval during which the substrate is in the first processing chamber and second time interval during which the substrate is present in the second processing chamber are measured. The substrate is annealed to restore a uniform equilibrium distribution of copper in the aluminum if the first time interval exceeds about 600 seconds or the second time interval exceeds about 300 seconds. The method substantially reduces the risk of metal comb bridging device failures following etch definition of conductor lines.

Abstract: Various embodiments of a downhole tool with a telescoping conductor member are provided. In one aspect, a downhole tool is provided that includes and a mandrel telescopically positioned in the housing. The mandrel and the housing define a pressure compensated substantially sealed chamber containing a volume of a non-conducting fluid. A conductor member is positioned in the housing for providing an electrically conducting pathway. The conductor member has a first segment and a second segment. The first segment is moveable with the mandrel and relative to the second segment. A portion of the conductor member is electrically insulated from an ambient fluid by the non-conducting fluid. A first biasing member is provided for maintaining a conducting pathway between the first segment and the second segment. The tool provides for electrical transmission in a telescoping tool.

Abstract: Various methods of fabricating a source/drain structure are provided. In one aspect, a method of processing a semiconductor workpiece is provided that includes implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials and forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials. The plurality of interstitials retards diffusion of the impurities. Impurity diffusion is retarded, resulting in better activation and a more abrupt impurity profile.

Abstract: Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.

Abstract: Various methods of inspecting a workpiece for residue are provided. In one aspect, a method of inspecting a workpiece for carbon residue includes directing coherent radiation at the workpiece to produce Rayleigh scattered radiation and Raman scattered radiation. The Rayleigh scattered radiation is filtered out. A spectrum for the Raman scattered radiation is detected and compared with a known Raman spectrum for carbon. Wafers may be inspected for residues, such as graphitic carbon, in a non-destructive way and without pump down. Deficiencies in resist stripping may be quickly identified.