Patents Represented by Attorney Tony M. Martinez

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  • Frequency selective surface and method of manufacture
    Patent number: 6995733
    Abstract: Briefly, in accordance with an embodiment of the invention, a frequency selective surface (FSS) structure and a method is provided. The FSS structure may include a first conductive plate over a first surface of a substrate. The FSS structure may further include a first printed inductor over the first surface of the substrate and coupled to the first conductive plate. The method may include forming a frequency selective surface by patterning a first conductive material over a surface of a substrate to form a printed inductor.
    Type: Grant
    Filed: December 24, 2002
    Date of Patent: February 7, 2006
    Assignee: Intel Corporation
    Inventor: Alan E. Waltho
  • Stacked ferroelectric memory device and method of making same
    Patent number: 6960479
    Abstract: The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures. Combining ferroelectric polymer and ferroelectric oxide layers on the pre-fabricated silicon substrate cavity forms a multi-rank structure.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: November 1, 2005
    Assignee: Intel Corporation
    Inventors: Jian Li, Xiao-Chun Mu
  • Metal structure for a phase-change memory device
    Patent number: 6797979
    Abstract: The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: September 28, 2004
    Assignee: Intel Corporation
    Inventors: Chien Chiang, Jong-Won Lee, Patrick Klersy
  • Reliable adhesion layer interface structure for polymer memory electrode and method of making same
    Patent number: 6798003
    Abstract: A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions. A memory system allows the polymer memory device to interface with various existing hosts.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: September 28, 2004
    Assignee: Intel Corporation
    Inventors: Jian Li, Xiao-Chun Mu
  • Phase change memory
    Patent number: 6791102
    Abstract: Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a phase change material having a bottom portion, a lateral portion, and a top portion. The phase change memory may further include a first electrode material contacting the bottom portion and the lateral portion of the phase change material and a second electrode material contacting the top portion of the phase change material.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: September 14, 2004
    Assignee: Intel Corporation
    Inventors: Brian G. Johnson, Charles H. Dennison
  • Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
    Patent number: 6462984
    Abstract: An integrated circuit (IC) has a number of memory cells, each of which has a diode structure coupled between a bitline and a wordline that are selected when programming that cell. A target memory cell of the IC is programmed while simultaneously floating a number of unselected bitlines and wordlines in the IC.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: October 8, 2002
    Assignee: Intel Corporation
    Inventors: Daniel Xu, Tyler A. Lowrey, David L. Kencke