Patents Represented by Attorney, Agent or Law Firm Townsend and Townsend ans Crew LLP
  • Vertical charge control semiconductor device
    Patent number: 6803626
    Abstract: In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.
    Type: Grant
    Filed: July 18, 2002
    Date of Patent: October 12, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Steven Sapp, Peter H. Wilson