Abstract: A semiconductor chip is provided which includes active and inactive IP cores. The spaces on the metal layer associated with the inactive IP cores includes voltage contrast inspection structures. The voltage contrast inspection structures serve to provide improved planarization of the metal layer and provided improved inspection capabilities.

Abstract: Different ways to reduce or eliminate the IMC cracking issues in wire bonded parts, including: changing to more compressive dielectric films for top, R1, and R2; changing the top passivation film stacks to more compressive films; changing the low k film to a higher compressive film; reducing the R layer thickness and pattern density to reduce tensile stress; and minimizing anneal and dielectric deposition temperatures. Each of the methods can be used individually or in combination with each other to reduce overall tensile stresses in the Cu/low-k wafer thus reducing or eliminating the IMC cracking issue currently seen in the post wire bonded parts.

Abstract: A method and system for utilizing a simplified resist process model to perform optical and process corrections. More specifically, the present invention provides a fast and easy post exposure bake (PEB) effects calculation which can be used in connection with OPC. The model can be used to increase OPC modeling accuracy, by taking PEB effects into consideration, without incurring a large overhead increase due to PEB calculation cost. The method includes providing an image, calculating initial acid concentration and adding acid concentration contours to the image, calculating deprotection concentration and adding deprotection concentration contours to the image, determining latent image contour without diffusion, moving the latent image contour in a direction of lower deprotection concentration to provide the final latent image, performing OPC on the chemically amplified resist using edge movement based on the final latent image, and repeating the process to obtain convergence.

Abstract: A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon, and are appropriate for such an application, in combination with boron as the shallow acceptor. The use of a deep acceptor for doping the base of the transistor has the benefit of providing a doping species, which increases in ionization as the temperature rises. At elevated temperatures, the fraction of, for example, indium which is ionized increases and it results in an increased Gummel number, driving down the current gain. In other words, the enhancement of the Gummel number between room temperature and an elevated temperature compensates for the increase in the ratio of collector and base currents due to band gap narrowing effects. Thus, a zero temperature coefficient bipolar transistor is provided.

Abstract: A test clocking scheme that separates the clock driving the functional logic and the memory from the clock driving the test logic and the memory. In other words, the test clocking scheme separates the memory functional clock from the memory test clock into two clock paths. The test clocking scheme provides for the ability to separately shut off either the memory functional clock source or the memory test clock source, provides that less power is required during production testing, and provides that simulation time is reduced during design verification because the functional logic is not clocked.

Abstract: The invention provides a number of related methods which improve the test and analysis of integrated circuit devices. A first method of the invention provides a method for pausing on a SCAN based test. A second method of the invention provides a method for using stimulations and responses of a known good device to increase fault coverage of patterns in a test flow. A third method of the invention provides a method to curve trace device buffers on an ATE.

Abstract: A method to maintain a well-defined gate stack profile, deposit or grow a uniform gate dielectric, and maintain gate length CD control by means of an inert insulating liner deposited after dummy gate etch and before the spacer process. The liner material is selective to wet chemicals used to remove the dummy gate oxide thereby preventing undercut in the spacer region. The method is aimed at making the metal gate electrode technology a feasible technology with maximum compatibility with the existing fabrication environment for multiple generations of CMOS transistors, including those belonging to the 65 nm, 45 nm and 25 nm technology nodes, that are being used in analog, digital or mixed signal integrated circuit for various applications such as communication, entertainment, education and security products.

Abstract: A methodology for generating scan based transition patterns (i.e., ATPG pattern generation for transition delay faults (“TDF”)) wherein when either a slow-to-rise (STR) or a slow-to-fall (STF) transition fault is detected, that specific fault is removed from a fault universe as well as its companion TDF, wherein the companion fault is a fault on the same node as the detected fault but has the opposite transition. In other words, if a slow-to-rise (STR) transition fault is detected, the slow-to-rise (STR) transition fault is removed from the fault universe as well as its corresponding slow-to-fall (STF) transition fault (and vise versa). By removing companion faults as well as those which are specifically detected, pattern generation run time is reduced as well as the total pattern count for the final delay test pattern.

Abstract: A method and system for selectively identifying reliability risk die based on characteristics of local regions on a wafer by computing particle sensitive yield and using the particle sensitive yield to identify reliability risk die. Specifically, a bin characteristics database which identifies hard and soft bins that are sensitive to different failure mechanisms is maintained, and the bin characteristics database is used to compute particle sensitive yield. It is determined whether the particle sensitive yield of the local region around the current die is less than a pre-set threshold, and the die is downgraded if the particle sensitive yield of the local region around the current die is less than the pre-set threshold. If the particle sensitive yield of the local region around the current die is not less than the pre-set threshold, the die is not downgraded.

Abstract: A circuit which facilitates TDF testing without having to purchase expensive new test equipment, such as a new test platform that is capable of supporting test frequencies well beyond the current 200 MHz limitation. A solution to current TDF testing problems by adding circuitry to the device-under-test (DUT) that is configured to receive two reference clock signals from automated test equipment (ATE), i.e. conventional ATE which does not provide test frequencies beyond 200 Mhz, and create two high-speed clock pulses that serve as the launch and capture clocks for the TDF test sequence on the DUT.

Abstract: A method of forming a metal gate in a wafer. PolySi1-xGex and polysilicon are used to form a tapered groove. Gate oxide, PolySi1-xGex, and polysilicon is deposited on a wafer. A resist pattern is formed. A portion of the polysilicon, PolySi1-xGex, and gate oxide is removed to provide a tapered profile. The resist is removed; a dielectric liner is deposited, and then at least a portion of the dielectric liner is removed, thereby exposing the polysilicon and leaving the dielectric liner in contact with the polysilicon, PolyS1-xGex, and gate oxide. A dielectric is deposited, and a portion is removed thereby exposing the polysilicon. The polysilicon, PolySi1-xGex, and gate oxide is removed from inside the dielectric liner, thereby leaving a tapered gate groove. Metal is then deposited in the groove.

Abstract: Noise and signal-to-noise ratio (SNR) estimation are relatively straightforward tasks. However, when SNR is small, systematic errors in measurement may result in over-estimation of SNR, which also occurs during runtime monitoring of SNR. Here, sufficient numbers of bits have been preassigned to each channel using QAM modulation scheme. Therefore, SNR relative to QAM lattice size depends on the noise margin and the desired (bit error rate) BER. If a relatively small margin is desired, similar measurement errors may result in over-estimation of SNR. Another problem that arises is that the variance of the noise estimator is relatively high. Therefore, SNR estimates may vary by several dB, and there is only 50% confidence in the usual estimators that the actual SNR value will not be worse than that estimated. Thus, a computationally efficient method for SNR estimation that also allows for specification of a confidence level in the estimates is provided.

Abstract: A method and apparatus for using and combining sub-frame processing and adaptive jitter-buffers for improved voice quality in voice-over-packet networks. Data is placed in a jitter buffer, where the data has a frame-length consisting of a plurality of samples. Some of the samples are placed in the DMA buffer, and some of the samples are placed in the back-up buffer. Samples are read out of the DMA buffer, and samples are moved from the back-up buffer to the DMA buffer.

Abstract: A semiconductor package for a die with improved thermal cycling reliability. A first layer of the package provides ball pads dispersed throughout. A second layer of the package provides signal traces. A high stress area associated with the corner of the dies is defined. Preferably the high stress area is defined as two ball pitches away from the corner of the die. Signal traces are routed away from the high stress area and in particular signal traces are routed away from the ball pads associated with the high stress to eliminate the cracks in the routed traces.

Abstract: An on-chip substrate voltage controller which includes a plurality of chains of interconnected loaded ring oscillators connected to a multiplexer, where the multiplexer is configured to average the outputs from all the chains of interconnected loaded ring oscillators. An output of the multiplexer is connected to a comparator, such as a phase detector. The comparator also receives an output from a PLL, and is configured to compare the output of the multiplexer to the output of the PLL. An output of the comparator is connected to the controllable voltage regulator. The controllable voltage regulator receives a voltage in as well as the output of the comparator, and applies a substrate bias depending on what is received from the comparator.

Abstract: The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.

Abstract: A method of determining the distance from an edge feature to a wafer edge. The wafer is put onto an image acquisition tool, and images are captured and classified. Based on the coordinates of the images and their classifications, the distance between an edge feature and the wafer edge is determined. Reference marks can be etched into the wafer to facilitate the measurement. The measurement technique is objective, and can be used to minimize the edge exclusion ring as well as defects that originate from the edge of the wafer.

Abstract: An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device uses the thin-oxide N-LDD implantation, and thus its ESD robustness is enhanced. This is performed by updating the logic Boolean operations of thick gate-oxide and thin gate-oxide N-LDD before fabricating the masks. In TGO, the intermediate-oxide ESD uses thin-oxide N-LDD implantation, and the thick-oxide ESD uses intermediate-oxide N-LDD implantation.

Abstract: A bus layout design is provided which includes a first electrically conductive layer with a first bus and a second bus and a second electrically conductive layer with a first bus and a second bus. Vias are provided between the first electrically conductive layer and the second electrically conductive layer such that the first bus and the second bus of the first electrically conductive layer are electrically connected.

Abstract: A method and apparatus for probing semiconductor circuits using a wafer-mounted micro-probing platform. A platform or platen is affixed to the surface of a wafer. Probe manipulators are mounted on the platen, and probes extend from or are otherwise associated with the probe manipulators. The probe manipulators may be fixed in position, or they may be motorized to allow adjustment of the probe positions while in-situ. During probing, electrical signals are preferably sent to the probes viz.-a-viz. feedthrough interfaces. The platen which is affixed to the surface of the wafer effectively serves two purposes: 1) as a mounting point for the probe manipulators; and 2) to mechanically stiffen the wafer so that the wafer does not flex, thereby requiring re-positioning of the probes.