Abstract: An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.

Abstract: A plasma switch is provided which can limit fault currents to a range that is elecrostatically interruptible by a control grid. The switch includes magnets that generate a first magnetic vector which cooperates with an electric field to generate a plasma, the density of which is a function of the magnitude of the first magnetic vector. A stalling coil is arranged to generate a second magnetic vector that opposes and cancels a portion of the first magnetic vector in response to a fault current through the switch. This establishes a stalling condition in which the plasma density falls and a plasma potential gradient is set up in the switch. In this unstable condition, the plasma current is interruptible by the control grid.

Abstract: A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.