Abstract: A plurality of beam generating units 76, 78, 80 and 82 each produces separated rectangular ion beams for implantation onto a targets 52 and 54 rotatively moving therepast. Each rectangular footprint is long in the direction of motion and is scanned transversely to the direction of motion. A plurality of beam generating units can be positioned adjacent to each other to multiply implant targets because of the compact structure of the separated ion source.

Abstract: Thermal coupling structure 40 has a tubular collar 42 which embraces the cold end of cold finger 14. Fingers 44 on collar 42 resiliently engage within inner wall 24 of dewar 22 so that heat is conducted from device 32 to be cooled through this inner wall 24 to fingers 44, collar 42 to cold finger 16.

Abstract: Method of and apparatus for operating an electro-optical system for producing high quality images from a liquid crystal light valve.A polarized projection beam is directed to the reflective surface of a liquid crystal light valve for polarization modulation by means of an input image. The beam is polarization analyzed to thereby generate an output image which typically suffers from color and brightness defects caused by economically unavoidable tolerance variations in the electro-optical system. A second beam of light is generated having a light of a selected color different from the projection beam, is spatially varied in intensity by a spatially graded filter, and super-imposed on the output image so as to eliminate the color and brightness defects as well as enhance color contrast and brightness of the image.

Abstract: Improved multicomponent fluorozirconate glasses, doped with chlorine, and a process for making them are disclosed that are continuously transmissive in the infrared spectrum.

Abstract: The specification describes a process for diffusing a metal into a substrate which may be either a semiconductor material or a dielectric material. The substrate is first coated with a liquid composition comprising organo-metallic solutions of the desired metal and silica. The coated substrate is then heated at an elevated temperature for a period of time sufficient to cause the organic portion of the solution to decompose, thereby leaving a composite film comprising an oxide of the desired metal and SiO.sub.2. Upon further heating, the metal from the metal oxide diffuses into the substrate. The residual composite film may be left in place or removed.

Abstract: A process for suppressing the out-diffusion of Li.sub.2 O from LiNbO.sub.3 and LiTaO.sub.3 waveguide structures by exposing the structures to a Li.sub.2 O-rich environment at sufficient vapor pressure that Li.sub.2 O diffuses into the structure as a compensation process and a solid-solid surface interaction occurs. In one embodiment of the invention, the out-diffusion of Li.sub.2 O from LiNbO.sub.3 and LiTaO.sub.3 crystals into which Ti has been diffused is eliminated by annealing the structure in a high purity powder of LiNbO.sub.3 or LiTaO.sub.3. In a second embodiment, the Li.sub.2 O out-diffusion is partially suppressed by annealing the structure in molten LiNO.sub.3. In a third embodiment of the invention, a waveguide structure comprising a Li.sub.2 O-rich guiding layer is formed by annealing LiNbO.sub.3 or LiTaO.sub.3 crystals in a high purity powder of LiNbO.sub.3 or LiTaO.sub.3, which not only suppresses Li.sub.2 O out-diffusion but also promotes Li.sub.2 O in-diffusion into the crystals.

Abstract: The specification describes a Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no post-implantation annealing.

Abstract: The specification describes a process for minimizing ion scattering and thereby improving resolution in ion beam lithography. First, a substrate coated with a layer of ion beam resist is provided at a chosen spaced distance from an ion beam source. Next, a monocrystalline membrane with a patterned ion absorption region is positioned at a predetermined location between the substrate target and the ion beam source. The patterned ion absorption region may be either an ion absorption mask, such as gold, deposited on the surface of the monocrystalline membrane, or a pattern of ion-damaged regions within the monocrystalline membrane. Finally, a collimated wide area ion beam is passed perpendicular to the surface of the membrane and through crystal lattice channels therein which are exposed by the patterned ion absorption region and which extend perpendicular to the membrane surface.

Abstract: The specification describes a process for making an insulated-gate field-effect transistor wherein a silicon nitride mask is deposited above the surface of a semiconductor body and is used in one embodiment of the invention in conjunction with a refractory gate member (1) as a mask in the formation of the source and drain regions by the ion implantation of conductivity-type-determining impurities on both sides of the gate and (2) as a mask in the formation of contact holes to the source and drain regions of the transistor for the subsequent provision of metal contacts to these regions. In another embodiment, there is described a process for forming source and drain contacts wherein the mask for the formation of contact holes by oxide etching is also the pattern definition and lift-off mask for the formation of metal contacts to the transistor.

Abstract: Alignment of a mask and a semiconductor wafer to be processed is effected by orthogonal and angular movements of the mask singly and in combination. A carrier for the mask is supported on four orthogonally positioned transducers which, when actuated to elongate or contract, produce carrier translational movement in either or both orthogonal directions and/or rotational movement by selective elongation and contraction of one or more transducers. Actuation of the transducers and the alignment are obtained by signals from a feedback system including photon detection and multiple frequency oscillation utilizing alignment marks on the mask and the wafer.