Patents Represented by Attorney Warren L. Frantz

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  • Tuning of SOI substrate doping
    Patent number: 8093115
    Abstract: A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: January 10, 2012
    Assignee: Texas Instruments Deutschland GmbH
    Inventors: Wolfgang Schwartz, Alfred Haeusler, Vladimir Frank Drobny