Abstract: A slurry-forming apparatus and method of using the slurry-forming apparatus. In one aspect, the apparatus (122) comprising: a) a vessel, comprising: i) a cylindrical vessel wall (60, 160), the cylindrical vessel wall having an interior surface; ii) a downwardly-sloped floor joined to the vessel wall; an outlet in the downwardly-sloped floor; iii) and one or more baffles (172, 182) along the interior surface of the vessel wall; b) a fluid inlet opening (86) into the vessel and being configured for injecting a fluid into the vessel; c) a granular material inlet opening into the vessel and being configured for providing a granular material into the vessel; and d) the baffles, fluid inlet, granular material inlet and outlet being configured relative to one another whereby a slurry is formed from the injected fluid and provided granular material without substantial mechanical agitation of the vessel, and whereby the slurry exits the vessel through the outlet.

Abstract: A survival weapon is described in which a projectile firing weapon mounts a stock member. A connector mounts the stock member to the projectile firing weapon for selective motion between an inoperative position in which the stock member is positioned in juxtaposition to the projectile firing weapon, and an operative position in which the stock member projects outwardly of the projectile firing weapon. The stock member includes compartments releasably receiving survival items such as a fire starting component, a cutting tool, a direction finding device, and ammunition for the projectile firing weapon. An access opening is formed in the stock member that is aligned with the trigger of the weapon and that provides access to the trigger when the stock member is in either the operative or inoperative position. A saw blade and a chopping head may also be provided for attachment to the stock member to enable use of the stock member as a saw or chopping tool.

Abstract: A method of forming CMOS integrated circuitry includes, a) providing a series of gate lines over a semiconductor substrate, a first gate line being positioned relative to an area of the substrate for formation of an NMOS transistor, a second gate line being positioned relative to an area of the substrate for formation of a PMOS transistor; b) masking the second gate line and the PMOS substrate area while conducting a p-type halo ion implant into the NMOS substrate area adjacent the first gate line, the p-type halo ion implant being conducted at a first energy level to provide a p-type first impurity concentration at a first depth within the NMOS substrate area; and c) in a common step, blanket ion implanting phosphorus into both the NMOS substrate area and the PMOS substrate area adjacent the first and the second gate lines to form both NMOS LDD regions and PMOS n-type halo regions, respectively, the phosphorus implant being conducted at a second energy level to provide an n-type second impurity concentration

Abstract: A new and distinct variety of peach tree denominated varietally as ‘Burpeachtwo’ and which is characterized as to novelty by a date of maturity for commercial harvesting and shipment of approximately August 1 to August 10 under the ecological conditions prevailing to the San Joaquin Valley of central California.