Abstract: Power generation systems are provided that include a circular loop of conduit, a dehumidifier coupled to the conduit, a power turbine coupled to the turbine and a pump coupled to the conduit. Processes for generating energy at an industrial mine site are also provided. Water heating systems are provided that can include a dehumidifier associated with a conduit containing water, a holding tank coupled to the conduit and water heaters coupled to the holding tank. Processes of heating water are also provided.

Abstract: Aspects of this invention disclose a system for providing a purchaser specified product search engine, including providing storage circuitry comprising a database of products, storing product data in the database, receiving from a prospective product purchaser, product data of a desired product to purchase, accessing the database of products and comparing the product data to product data in the database, and determining a probability that the product data matches product data stored in the database. Other aspects may include a data processing apparatus providing a purchaser specified product search engine, including storage circuitry comprising a database of product data, processing circuitry configured to receive purchaser specified product search inquiry data, accessing the database of product data, and comparing the purchaser specified product search inquiry data to the product data; and determining a probability that the prospective purchaser product data matches the product data stored in the database.

Abstract: Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.

Abstract: Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10?7 amps/cm2 at from ?1.1V to +1.1V.

Abstract: The invention includes a device having a chamber within a syringe. A fluid passageway extends through a syringe piston. A valve is associated with the passageway controlling fluid passage through the piston. The invention includes a piercing structure having a head segment and a body portion, with a channel through the body portion and through at least one surface of the head without passing through the tip. In another aspect the invention encompasses a method of preparing an agent for administration to an individual. A first component is provided within a syringe and a second component is provided within a vial. A closed valve is associated with a fluid passageway between the vial and the syringe barrel through a piston. Valve repositioning allows fluid passage and sliding of the piston joins the first and second components. Repeated sliding of the piston mixes the components to produce the medication agent.

Abstract: Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.

Abstract: Incident response methods include receiving notification that an incident has occurred, determining a source of the notification, the source being near the incident, and establishing at least one guided path configured to direct a first person, a first animal, or a first movable device positioned near the source away from the incident and/or to direct a second person, a second animal, or a second movable device toward the incident. Electronic guides include an indicator, and processing circuitry configured to receive a request to configure the indicator from an inactive state to an active state in which the indicator encourages a first person positioned near a first side of the electronic guide to move toward the electronic guide and encourages a second person positioned near a second side of the electronic guide to move away from the electronic guide and configure the indicator according to the request.

Abstract: A backlight device for providing backlighting to a liquid crystal display panel displaying a video image comprising a plurality of light emitting devices for providing backlighting to a liquid crystal display panel, a controller unit for receiving a video image and dividing the video image into a plurality of sub-images wherein each sub-image corresponds to at least one light emitting device, and for generating driving signals of each light emitting device according to grayscale level characteristics of at least one sub-image.

Abstract: Uninterruptible power supplies, solar power kits for uninterruptible power supplies and related methods are described. According to one aspect, an uninterruptible power supply includes a power bus, mains circuitry configured to rectify electrical energy received from a mains supply system into rectified electrical energy and to provide the rectified electrical energy to a power bus of the uninterruptible power supply, photovoltaic circuitry configured to convert solar energy into converted electrical energy and to provide the converted electrical energy to the power bus, a battery system configured to receive electrical energy from the power bus to charge a battery of the battery system and to discharge electrical energy to the power bus, an inverter configured to provide electrical energy from the power bus to the load, and a controller configured to monitor the photovoltaic circuitry and to implement at least one operation of the uninterruptible power supply using the monitoring.

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Abstract: Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots. Some embodiments include methods of forming memory cells in which two charge-trapping zones are formed over tunnel dielectric, with the zones being vertically displaced relative to one another, and with the zone closest to the tunnel dielectric having deeper traps than the other zone. Some embodiments include electronic systems comprising memory cells. Some embodiments include methods of programming memory cells having vertically-stacked charge-trapping zones.

Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.

Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Abstract: A power generation system is provided that includes an internal combustion engine configured to provide rotational mechanical energy. A generator is configured to receive the rotational mechanical energy and generate electrical power in response to the rotational mechanical energy. A fluid medium is provided to the internal combustion engine and to the generator for removing thermal energy from the internal combustion engine and from the generator.

Abstract: A cleaning apparatus is described and which includes a housing which is moveable across a supporting surface; a first electrically actuated fluid pump which is mounted in the housing, and which is operable to deliver a first stream of fluid at a pressure of at least about 150 PSI to less than about 1200 PSI; a second electrically actuated fluid pump which is mounted in the housing, and which is operable to deliver a second stream of fluid, at a pressure, of less than about 600 PSI; and an electrically actuated heater which is mounted in the housing, and which is operable to impart heat energy to the second fluid stream.

Abstract: A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed to comprise opposing insulative projections extending toward one another partially under the channel region along the channel length and with semiconductor material being received over the projections. The trench isolation material is etched to expose opposing sides of the semiconductor material along the channel length. The exposed opposing sides of the semiconductor material are etched along the channel length to form a channel fin projecting upwardly relative to the projections. A gate is formed over a top and opposing sides of the fin along the channel length. Other methods and structures are disclosed.

Abstract: Some embodiments include methods of forming capacitors. A first capacitor storage node may be formed within a first opening in a first sacrificial material. A second sacrificial material may be formed over the first capacitor storage node and over the first sacrificial material, and a retaining structure may be formed over the second sacrificial material. A second opening may be formed through the retaining structure and the second sacrificial material, and a second capacitor storage node may be formed within the second opening and against the first storage node. The first and second sacrificial materials may be removed, and then capacitor dielectric material may be formed along the first and second storage nodes. Capacitor electrode material may then be formed along the capacitor dielectric material. Some embodiments include methods of forming DRAM unit cells, and some embodiments include DRAM unit cell constructions.

Abstract: The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.

Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.