Abstract: The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.
Type:
Grant
Filed:
January 8, 2001
Date of Patent:
August 20, 2002
Assignee:
Infineon Technologies AG
Inventors:
Walter Hartner, Günther Schindler, Frank Hintermaier